ETC 2N5302/D

ON Semiconductor
High-Power NPN Silicon
Transistor
2N5302
. . . for use in power amplifier and switching circuits applications.
• Low Collector–Emitter Saturation Voltage –
30 AMPERE
POWER TRANSISTOR
NPN SILICON
60 VOLTS
200 WATTS
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
*MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
2N5302
Unit
VCEO
60
Vdc
VCB
60
Vdc
Collector Current – Continuous
IC
30
Adc
Base Current
IB
7.5
Adc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
200
1.14
Watts
W/C
TJ, Tstg
–65 to +200
C
Operating and Storage Junction
Temperature Range
CASE 1–07
TO–204AA
(TO–3)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.875
C/W
Thermal Resistance, Case to Ambient
θCA
34
C/W
*Indicates JEDEC Registered Data.
PD, POWER DISSIPATION (WATTS)
TA TC
8.0 200
6.0 150
TC
4.0 100
TA
2.0
50
0
0
0
20
40
60
80
100 120 140
TEMPERATURE (°C)
160
180
200
Figure 1. Power Temperature Derating Curve
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1
Publication Order Number:
2N5302/D
2N5302
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
–
–
5.0
–
1.0
–
10
–
1.0
–
5.0
40
15
5.0
–
60
–
–
–
–
0.75
2.0
3.0
–
–
–
1.7
1.8
2.5
–
–
1.7
3.0
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
ICEX
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
ICEX
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
*(IC = 1.0 Adc, VCE = 2.0 Vdc)
*(IC = 15 Adc, VCE = 2.0 Vdc)
*(IC = 30 Adc, VCE = 4.0 Vdc)
hFE
*Collector–Emitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 20 Adc, IB = 2.0 Adc)2
(IC = 30 Adc, IB = 6.0 Adc)
VCE(sat)
*Base Emitter Saturation Voltage (Note 1)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 20 Adc, IB = 2.0 Adc)
VBE(sat)
*Base–Emitter On Voltage (Note 1)
(IC = 15 Adc, VCE = 2.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
VBE(on)
–
Vdc
Vdc
Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.0
–
MHz
Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
–
–
*SWITCHING CHARACTERISTICS
Rise Time
Storage Time
((VCC = 30 Vdc,
dc, IC = 10
0 Adc,
dc, IB1 = IB2 = 1.0
0 Adc)
dc)
Fall Time
tr
–
1.0
µs
ts
–
2.0
µs
tf
–
1.0
µs
*Indicates JEDEC Registered Data.
Note 1: Pulse Width 300 µs, Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100 µs
DUTY CYCLE = 2.0%
VCC
INPUT PULSE
tr ≤ 20 ns
PW = 10 to 100 µs
DUTY CYCLE = 2.0%
+30 V
3.0
+11 V
10
-2.0 V
VCC
3.0
+11 V
TO
SCOPE
tr ≤ 20 ns
0
-9.0 V
10
D
VBB = 7.0 V
Figure 2. Turn–On time
Figure 3. Turn–Off time
http://onsemi.com
2
+30 V
TO
SCOPE
tr ≤ 20 ns
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2N5302
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
θJC(t) = r(t) θJC
θJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.01
0.03
0.02
SINGLE PULSE
0.02
0.01
0.02
0.03 0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
t, TIME (ms)
20
30
50
100
200 300
1000 2000
500
Figure 4. Thermal Response
100
3000
IC, COLLECTOR CURRENT (AMP)
50
100 µs
2000
10
5.0
5.0 ms
5302
1.0 ms
TJ = 200°C
Secondary Breakdown Limited
Bonding Wire Limited
TC = 25°C
Thermal Limitations
Pulse Duty Cycle ≤ 10%
2.0
1.0
0.5
C, CAPACITANCE (pF)
20
dc
TJ = 25°C
1000
Cib
500
200
2N5302
0.2
0.1
1.0
50
2.0 3.0
5.0
10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
0.5
100
Figure 5. Active–Region Safe Operating Area
TJ = 25°C
IC/IB = 10
ts′
1.0
t, TIME (s)
µ
1.0
0.7
0.5
tr @ VCC = 30 V
0.3
30
50
TJ = 25°C
IB1 = IB2
IC/IB = 10
ts′ ≈ ts - 1/8 tf
0.7
0.5
tf @ VCC = 30 V
0.3
0.2
0.07
0.05
0.03 0.05
2.0 3.0
5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
3.0
2.0
0.1
1.0
Figure 6. Capacitance versus Voltage
5.0
3.0
t, TIME (s)
µ
Cob
300
tf @ VCC = 10 V
tr @ VCC = 10 V
td @ VOB = 2.0 V
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
10
0.1
0.03 0.05
20 30
Figure 7. Turn–On Time
0.1
0.3 0.5
1.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn–Off Time
http://onsemi.com
3
10
30
300
hFE, DC CURRENT GAIN
VCE = 10 V
VCE = 2.0 V
TJ = 175°C
200
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N5302
25°C
100
70
50
-55°C
30
20
10
0.03 0.05
0.1
0.3 0.5
1.0 3.0 5.0
IC, COLLECTOR CURRENT (AMP)
10
30
2.0
TJ = 25°C
1.6
0.8
0.4
0
0.01 0.02
IC = 2 x ICES
105
IC ≈ ICES
40
60
80
100
140
180
160
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0.1
0.3
0.5
1.0
3.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Effects of Base–Emitter Resistance
Figure 12. “On” Voltages
θV, TEMPERATURE COEFFICIENTS (mV/°C)
IC, COLLECTOR CURRENT (A)
µ
1.0
0
0.03 0.05
200
103
102
TJ = 175°C
100°C
101
25°C
100
IC = ICES
10-1
10-2
10-3
-0.4 -0.3
REVERSE
-0.2 -0.1
FORWARD
0
0.1
0.2
10
1.2
TJ, JUNCTION TEMPERATURE (°C)
VCE = 30 V
5.0
1.4
0.2
120
2.0
TJ = 25°C
0.4
TYPICAL ICES VALUES OBTAINED
FROM FIGURE 13
20
0.1 0.2
0.5
1.0
IB, BASE CURRENT (AMP)
1.6
IC = 10 x ICES
0
0.05
1.8
V, VOLTAGE (VOLTS)
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
107
102
20 A
2.0
VCE = 30 V
103
10 A
Figure 10. Collector Saturation Region
108
104
5.0 A
1.2
Figure 9. DC Current Gain
106
IC = 2.0 A
0.3
0.4
0.5
0.6
10
+2.5
TJ = -55°C to +175°C
+2.0
+1.5
+1.0
*APPLIES FOR IC/IB <
+0.5
[email protected] 2.0V
2
*θVC for VCE(sat)
0
-0.5
-1.0
θVB for VBE(sat)
-1.5
-2.0
-2.5
0.03 0.05
0.1
0.3
0.5
1.0
3.0
5.0
10
VBE, BASE-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
Figure 13. Collector Cut–Off Region
Figure 14. Temperature Coefficients
http://onsemi.com
4
30
30
2N5302
PACKAGE DIMENSIONS
TO–204 (TO–3)
CASE 1–07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
A
N
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
http://onsemi.com
5
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
2N5302
Notes
http://onsemi.com
6
2N5302
Notes
http://onsemi.com
7
2N5302
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: [email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: [email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: [email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
2N5302/D