ISC 2SA1771

Inchange Semiconductor
Product Specification
2SA1771
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-14
V
IC
Collector current
-12
A
IB
Base current
-1.2
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1771
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-6A ;IB=-0.3A
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-6A; IB=-0.3A
-1.2
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-14V; IC=0
-10
μA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
100
hFE-2
DC current gain
IC=-6A ; VCE=-1V
40
Transition frequency
IC=-1A ; VCE=-5V
50
MHz
Collector output capacitance
f=1MHz;VCB=-10V
300
pF
0.2
μs
0.6
μs
0.1
μs
fT
COB
ton
Turn-on time
ts
Storage time
tf
Fall time
CONDITIONS
MIN
TYP.
-80
2
UNIT
V
B
IB1=-IB2=-0.3A; VCC=-30V
RL=5Ω
Duty cycle≤1%
MAX
320
Inchange Semiconductor
Product Specification
2SA1771
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SA1771
Silicon PNP Power Transistors
4