DMP3085LSD-13 - Diodes Incorporated

DMP3085LSD
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON) MAX
Package
-30V
70mΩ @VGS = -10V
95mΩ @VGS = -4.5V
SO-8
ID
TA = +25°C
-3.9A
-3.3A
Description

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
Mechanical Data
ideal for high efficiency power management applications.

Case: SO-8

Case Material: Molded Plastic, "Green" Molding Compound
Applications

Backlighting

Power Management Functions

DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram
Terminals: Finish  Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208

Weight: 0.074 grams (approximate)
S1
D1
G1
D1
S2
D2
G2
D2
D1
G1
D2
G2
S1
Top View
Internal Schematic
Top View
S2
Equivalent Circuit
(Note 4)
Part Number
DMP3085LSD-13
Notes:
UL Flammability Classification Rating 94V-0


SO-8
Ordering Information

Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
8
5
Logo
Part no.
P3085SD
YY WW
Xth week: 01~53
Year: “12” = 2012
1
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
4
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DMP3085LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-30
±20
-3.9
-3.1
ID
A
-4.9
-3.9
-2.5
20
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Units
V
V
IS
IDM
A
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Value
1.1
0.7
107
70
1.7
1.1
75
50
14.5
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
—
—
—
—
—
—
-1
±100
V
µA
nA
VGS = 0V, ID = -250µA
VDS =-30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
—
50
75
5.8
-0.7
-3
70
95
—
-1.2
V
Static Drain-Source On-Resistance
-1
—
—
—
—
S
V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5.3A
VGS = -4.5V, ID = -4.2A
VDS = -5V, ID = -5.3A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
563
48
41
10.3
5.2
11
1.7
1.9
4.8
5
31
14.6
—
—
—
—
—
—
—
—
—
—
—
—
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -15V, ID = -3.8A
nS
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0Ω
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
Test Condition
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
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DMP3085LSD
16.0
20
VGS = -10V
VGS = -4.0V
VGS = -3.0V
4.0
TA = -55°C
8
4
VGS = -2.5V
VGS = -2.0V
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1.0
VGS = -4.5V
0.1
0
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
TA = 25°C
12
8.0
VGS = -10V
0.01
1
2
3
4
5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1.8
VGS = -10V
ID = -5.3A
1.6
1.4
1.2
VGS = -4.5V
ID = -4.2A
1
0.8
0.6
0.4
0.2
0
-50
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
2
75 100 125 150
-25
0
25
50
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
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6
0.4
VGS = -4.5V
0.35
0.3
T A = 150C
0.25
TA = 125C
0.2
T A = 85C
0.15
T A = 25C
0.1
T A = -55C
0.05
0
0
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T A = 85°C
TA = 125°C
16
VGS = -4.5V
12.0
0.0
TA = 150°C
VDS = -5.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
20.0
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.16
0.14
0.12
VGS = -4.5V
ID = -4.2A
0.1
0.08
0.06
VGS = -10V
ID = -5.3A
0.04
0.02
0
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
May 2013
© Diodes Incorporated
DMP3085LSD
20
-I D = 1mA
1.6
16
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.4
-ID = 250µA
0.8
12
8
TA= 25°C
4
0
-50
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1000
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
f = 1MHz
Ciss
9
-VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
0
100
Coss
Crss
8
7
VDS = -15V
ID = -3.8A
6
5
4
3
2
1
10
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
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0
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
12
May 2013
© Diodes Incorporated
DMP3085LSD
Package Outline Dimensions
0.254
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0
8

All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMP3085LSD
Document number: DS36194 Rev. 1 - 0
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