AOS Semiconductor Product Reliability Report

AOS Semiconductor
Product Reliability Report
AOD413
rev E
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOD413. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOD413 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
low gate resistance. With the excellent thermal resistance of the DPAK package, this device is
well suited for high current load applications.
-RoHS Compliant
-Halogen Free*
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II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond wire
Mold Material
Flammability Rating
Backside Metallization
Moisture Level
AOD413
Standard sub-micron
Low voltage P channel process
3 leads TO252
Bare Cu
Soft solder
G: Au 1.3mils; S: Al 12mils
Epoxy resin with silica filler
UL-94 V-0
Ti / Ni / Ag
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AOD413
Test Item
Test Condition
Time
Point
Solder
Reflow
Precondition
HTGB
168hr 85°c /85%RH +3
cycle
[email protected]°c
Temp = 150 °c,
Vgs=100% of Vgsmax
HTRB
HAST
Pressure Pot
Lot Attribution
Total
Sample
size
-
9 lots
1210pcs
0
168 / 500
hrs
3 lots
246pcs
0
1000 hrs
(Note A*)
168 / 500
hrs
3 lots
1000 hrs
(Note A*)
130 +/- 2 °c, 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
100 hrs
9 lots
121 °c, 29.7psi,
RH=100%
96 hrs
Temp = 150 °c,
Vds=80% of Vdsmax
(Note B**)
5 lots
(Note B**)
Temperature
Cycle
-65 to 150 °c,
air to air,
250 / 500
cycles
8 lots
(Note B**)
Number
of
Failures
77+5 pcs /
lot
246pcs
0
77+5 pcs /
lot
495pcs
0
50+5 pcs /
lot
275pcs
0
50+5 pcs /
lot
440pcs
0
50+5 pcs /
lot
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III. Result of Reliability Stress for AOD413
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150°°c bake
150°°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
245°°c
5 sec
15
15 leads
0
Solder dunk
260°°c
10secs
3 cycles
1
30
0
Note A: The HTGB and HTRB reliability data presents total of available AOD413 burn-in data up
to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AOD413 comes from
the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 14
MTTF = 7918 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOD413). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
2
9
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Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
7
MTTF = 10 / FIT =6.94x 10 hrs =7918years
/ [2x6x164x500x258)] = 14
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C)
Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzman’s constant, 8.617164 X 10 E-5V / K
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