8V P-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
LP2305DSLT1G
S-LP2305DSLT1G
VDS= -8V
RDS(ON), Vgs@-4.5V, [email protected] = 68 mΩ
RDS(ON), Vgs@-2.5V, [email protected] = 81 mΩ
RDS(ON), Vgs@-1.8V, [email protected] = 118 mΩ
3
Features
Advanced trench process technology
1
High Density Cell Design For Ultra Low On-Resistance
2
SOT– 23 (TO–236AB)
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
we declare that the material of product
3
compliance with RoHS requirements .
D
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
G
1
▼ Simple Drive Requirement
2
S
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
Marking
Shipping
LP2305DSLT1G
S-LP2305DSLT1G
LP2305DSLT3G
S-LP2305DSLT3G
P5S
3000/Tape&Reel
P5S
10000/Tape&Reel
Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±8
ID
-3.5
IDM
-12
TJ, Tstg
-55 to 150
Continuous Drain Current
Pulsed Drain Current
1)
Operating Junction and Storage Temperature Range
Total Device Dissipation FR–5 Board
TA = 25°C
PD
Unit
V
A
1100
o
C
mW
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Unit
110
℃/W
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
ELECTRICAL CHARACTERISTICS
Parameter
Static
Symbol
Test Condition
Min
Typ
Max
Unit
1)
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = -250uA
Drain-Source On-State Resistance
RDS(on) VGS = -4.5V, ID = -3.5A
47.0
68.0
Drain-Source On-State Resistance
RDS(on) VGS = -2.5V, ID = -3A
55.0
81.0
Drain-Source On-State Resistance
RDS(on) VGS = -1.8V, ID = -2A
67.0
118.0
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA
-8
V
-0.45
mΩ
-0.8
V
Zero Gate Voltage Drain Current
IDSS
VDS = -6.4V, VGS = 0V
1
uA
Gate Body Leakage
IGSS
VGS = ± 8V, VDS = 0V
±100
nA
Forward Transconductance
gfs
VDS = -5V, ID = -3.5A
On-State Drain Current 2)
ID(on)
8.5
VDS v –5 V, VGS = –4.5 V
–6
VDS v –5 V, VGS = –2.5 V
–3
S
A
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Dynamic
IS
VSD
A
–1.6
IS = -1.6A, VGS = 0V
-1.2
V
3)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
210
td(on)
13
20
25
40
55
80
19
35
1245
V
4 V,
V VGS = 0,
0 f = 1MHZ
1 MH
VDS = –4
F
pF
375
Switching 3)
Turn-On Time
tr
td(off)
Turn-Off Time
VDD = –4
4 V
V, RL = 4 W
ID = –1.0 A, VGEN = –4.5 V
RG = 6 W
tf
ns
Note: 1. Static parameters are based on package level with recommended wire-bonding
2.For DESIGN AID ONLY, not subject to production testing.
3.Pulse test: PW v300 ms duty cycle v2%.
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
Id DRAIN CURRENT(A)
Id DRAIN CURRENT(A)
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
Rds(on) ON-RESISTANCE
Vds DRAIN-TO-SOURCE VOLTAGE(V)
Rds(on) ON-RESISTANCE
Vgs GATE-TO-SOURCE VOLTAGE(V)
Id DRAIN CURRENT(A)
Figure 3. On–Resistance versus Drain Current
Vgs GATE-TO-SOURCE VOLTAGE(V)
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 5. Gate Charge
Figure 6. Capacitance
Figure 7. On-Resistance Vs.Junction Temperature
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LP2305DSLT1G , S-LP2305DSLT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 5/5