Gre r e Pro STU/D328S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m ) Max ID Rugged and reliable. 4.9 @ VGS=10V 30V TO-252 and TO-251 Package. 58A 7.2 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS TC=25°C TC=70°C Drain Current-Continuous -Pulsed a c Limit Units 30 V ±20 V 58 A 46 A 170 A 256 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Apr,23,2012 1 www.samhop.com.tw STU/D328S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=24V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=29A VGS=4.5V , ID=24A VDS=10V , ID=29A Min Typ Max 30 1.0 Units V 1 uA ±100 nA 1.6 3.9 3 4.9 V m ohm 5.3 7.2 m ohm 78 S 1950 325 256 pF pF pF b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V f=1.0MHz b VDD=15V ID=1A VGS=10V RGEN= 6 ohm 8 ns 34 75 ns ns 51 ns VDS=15V,ID=25A,VGS=10V 29 nC VDS=15V,ID=25A,VGS=4.5V 13.5 nC 2.6 nC 8.6 nC VDS=15V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=6A 0.78 1.3 V Notes _ 2%. _ 300us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 25V.(See Figure13) Apr,23,2012 2 www.samhop.com.tw STU/D328S Ver 1.0 100 35 V G S =4.5V 80 V G S =3.5V ID, Drain Current(A) ID, Drain Current(A) V G S =10V V G S =4V 60 40 V G S =3V 20 28 Tj=125 C 21 14 25 C -55 C 7 V G S =2.5V 0 0 0 0.5 1 2 1.5 2.5 1.8 2.4 3.0 3.6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.0 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.2 V GS, Gate-to-Source Voltage(V) 8 VGS=4.5V 6 4 VGS=10V 2 1.8 V G S =10V I D =29A 1.6 1.4 1.2 V G S =4.5V I D =24A 1.0 1 20 40 60 80 0 100 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 0.6 V DS, Drain-to-Source Voltage(V) 10 0 0 3 100 125 150 Tj, Junction Temperature(° C ) 1.40 1.30 I D =250uA 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Apr,23,2012 3 www.samhop.com.tw STU/D328S Ver 1.0 60 18 Is, Source-drain current(A) I D =29A 15 RDS(on)(m Ω) 12 125 C 9 6 0 25 C 75 C 3 0 2 4 6 8 75 C 0 0.25 0.50 0.75 1.00 1.25 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 2000 C, Capacitance(pF) 25 C 1 10 2400 1600 1200 800 Coss 400 Crss 0 0 125 C 10 5 10 15 20 25 10 VDS=15V ID=25A 8 6 4 2 0 30 0 4 8 12 16 20 24 28 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 32 Switching Time(ns) 100 I D, Drain Current(A) 300 TD(off) Tf Tr TD(on) 10 VDS=15V,ID=1A VGS=10V 100 RD 1 10 0.1 100 ( L im it 10 1m 0u s s 10 m DC s 10 1 1 S ) ON VGS=10V Single Pulse TA=25 C 1 10 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Apr,23,2012 4 www.samhop.com.tw STU/D328S Ver 1.0 V ( BR )D S S tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Apr,23,2012 5 www.samhop.com.tw STU/D328S Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-251 Apr,23,2012 6 www.samhop.com.tw STU/D328S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.184 0.000 0.633 0.666 5.207 0.460 5.969 5.415 6.400 4.902 2.286 9.601 1.313 2.666 0.460 0.889 0.508 0° 7° INCHES MAX 2.388 0.127 0.889 1.092 5.461 0.584 6.223 5.515 6.731 5.004 BSC 10.286 1.651 3.174 0.560 1.143 1.016 8° REF. MIN 0.086 0.000 0.025 0.026 0.205 0.018 0.235 0.213 0.252 0.193 0.090 0.378 0.052 0.105 0.018 0.035 0.020 0° 7° MAX 0.094 0.005 0.035 0.043 0.215 0.023 0.245 0.217 0.265 0.197 BSC 0.405 0.065 0.125 0.022 0.045 0.040 8° REF. Apr,23,2012 7 www.samhop.com.tw STU/D328S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Apr,23,2012 8 www.samhop.com.tw