STD12L01

Gre
r
Pro
STD12L01
S a mHop Microelectronics C orp.
Ver 1.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m ) Max
100V
12A
160 @ VGS=10V
G
D
Rugged and reliable.
TO-251 Package.
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
ID
IDM
Limit
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
±20
V
12
A
9.6
A
35
A
25
mJ
TC=25°C
50
W
TC=70°C
32
W
-55 to 150
°C
2.5
°C/W
50
°C/W
Drain Current-Continuous
-Pulsed
TC=25°C
TC=70°C
a
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Oct,29,2010
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STD12L01
Ver 1.3
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Typ
Max
V
1
±100
2
Units
2.8
4
120
160
uA
nA
Drain-Source On-State Resistance
VDS=VGS , ID=250uA
VGS=10V , ID=6A
Forward Transconductance
VDS=10V , ID=6A
5
S
VDS=25V,VGS=0V
f=1.0MHz
520
47
29
pF
pF
pF
15.5
ns
12.2
ns
18
ns
4
ns
VDS=50V,ID=6A,VGS=10V
7.8
nC
VDS=50V,ID=6A,
VGS=10V
1.9
nC
2.9
nC
V
m ohm
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.775
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Oct,29,2010
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STD12L01
Ver 1.3
10
15
12
I D, Drain Current(A)
VGS=7V
9
VGS=6V
6
VGS=5V
3
0
RDS(on)(m Ω)
VGS=8V
0
2.0
1.5
1.0
0.5
2.5
8
6
Tj=125 C
4
-55 C
2
0
3.0
0
2.4
3.6
4.8
7.2
6.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
200
1.8
160
120
V G S =10V
80
40
V G S =10V
I D =6A
1.6
1.4
1.2
1.0
1
3
6
9
12
0
15
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
V GS, Gate-to-Source Voltage(V)
240
1
25 C
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=10V
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,29,2010
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STD12L01
Ver 1.3
20.0
420
Is, Source-drain current(A)
I D =6A
350
125 C
210
75 C
140
25 C
70
0
2
4
6
8
0.25
0.50
0.75
1.00
1.25
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
Ciss
450
300
Coss
Crss
10
VDS=50V
ID=6A
8
6
4
2
0
0
5
10
15
20
25
30
0
1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
1m
it
10
L im
I D, Drain Current(A)
Tr
Tf
s
TD(on)
10
0u
TD(off )
10
100
N)
300
(O
C, Capacitance(pF)
0
VSD, Body Diode Forward Voltage(V)
150
Switching Time(ns)
25 C
75 C
V GS, Gate-to-Source Voltage(V)
750
0
125 C
1.0
10
900
600
5.0
S
0
10.0
RD
RDS(on)(m Ω)
280
10
DC
s
ms
1
VGS=10V
Single Pulse
TA=25 C
VDS=50V,ID=1A
VGS=10V
0.1
1
1
10
100
0.1
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Oct,29,2010
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STD12L01
Ver 1.3
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Oct,29,2010
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STD12L01
Ver 1.3
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Oct,29,2010
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STD12L01
Ver 1.3
TO-251 Tube
TO-251 Tube
540 + 1.5
4.5
5.5
2~ӿ3.0
" A"
0.4
1.90
7.50
1.25
5.25
1.4
1.65
2.25
6.60
19.75
UNIT:nn
Oct,29,2010
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