SSF6808
Feathers:
ID =84A
Advanced trench process technology
Ultra low Rdson, typical 6mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=68V
Rdson=8mohm
Description:
The SSF6808 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6808 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF6808 TOP View (TO220)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25ْ C
Continuous drain current,VGS@10V
84
ID@Tc=100ْC
Continuous drain current,VGS@10V
76
IDM
Pulsed drain current ①
310
Power dissipation
181
W
Linear derating factor
1.5
W/ْ C
VGS
Gate-to-Source voltage
±20
V
dv/dt
Peak diode recovery voltage
31
v/ns
400
mJ
PD@TC=25ْC
EAS
Single pulse avalanche energy
②
EAR
Repetitive avalanche energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Units
A
TBD
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.83
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
BVDSS
Drain-to-Source breakdown voltage
68
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
5
8
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
2
—
—
10
IDSS
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2012.3.1
Max. Units
Test Conditions
VDS=68V,VGS=0V
μA
VDS=68V,
VGS=0V,TJ=150ْC
Version: 2.4
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SSF6808
IGSS
Qg
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Total gate charge
—
90
—
ID=30A
VDD=30V
VGS=20V
nA
VGS=-20V
nC
Qgs
Gate-to-Source charge
—
18
—
Qgd
Gate-to-Drain("Miller") charge
—
28
—
VGS=10V
td(on)
Turn-on delay time
—
18.2
—
VDD=30V
Rise time
—
15.6
—
Turn-Off delay time
—
70.5
—
Fall time
—
13.8
—
VGS=10V
Ciss
Input capacitance
—
3150
—
VGS=0V
Coss
Output capacitance
—
300
—
Crss
Reverse transfer capacitance
—
240
—
tr
td(off)
tf
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
Min.
Typ.
Max.
—
—
84
Units
MOSFET symbol
A
—
—
310
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=68A,VGS=0V ③
trr
Reverse Recovery Time
—
57
—
nS
TJ=25ْC,IF=68A
Qrr
Reverse Recovery Charge
—
107
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 37A, VDD = 30V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS test circuit:
Gate charge test circuit:
BV dss
©Silikron Semiconductor Corporation
2012.3.1
Version: 2.4
page
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SSF6808
Switch Waveforms:
Switch Time Test Circuit：
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
Breakdown Voltage vs. Junction Temperature
2012.3.1
Version: 2.4
page
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SSF6808
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2012.3.1
Version: 2.4
page
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SSF6808
Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
L4
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
0.900
3.000
1.750
1.000
3.100
1.850
1.100
0.114
0.065
0.035
0.118
0.069
0.039
0.122
0.073
0.043
Q1
50
Q2
Q3
50
50
70
70
70
90
90
90
50
50
50
70
70
70
90
90
90
Q4
10
30
50
10
30
50
©Silikron Semiconductor Corporation
2012.3.1
Version: 2.4
page
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