Datasheet - Silikron

SSFD6046
Feathers:
ID =12A
„
Advanced trench process technology
„
avalanche energy, 100% test
„
Fully characterized avalanche voltage and current
BV=60V
Rdson=50mΩ(max.)
Description:
The SSFD6046 is a new generation of middle voltage
N–Channel enhancement mode trench power MOSFET. This
new technology increases the device reliability and electrical
SSFD6046
parameter repeatability. SSFD6046 is assembled in high
reliability and qualified assembly house.
TOP View (TO252)
Marking and pin Assignment
Absolute Maximum Ratings
Parameter
Max.
[email protected]=25ْ C
Continuous drain current,[email protected]
12
[email protected]=100ْC
Continuous drain current,[email protected]
9
IDM
Pulsed drain current ①
30
Power dissipation
20
W
Linear derating factor
0.12
W/ْ C
Gate-to-Source voltage
±20
V
8
mJ
[email protected]=25ْC
VGS
EAS
Single pulse avalanche energy
EAR
Repetitive avalanche energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
②
Units
A
TBD
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
7.5
RθJA
Junction-to-ambient
—
—
60
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Test Conditions
Drain-to-Source breakdown voltage
60
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
46
50
mΩ
VGS=10V,ID=12A
VGS(th)
Gate threshold voltage
1.0
3.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
—
15
—
S
VDS=5V,ID=12A
—
—
1
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2010.09.01
VDS=60V,VGS=0V
μA
VDS=60V,
VGS=0V,TJ=55ْC
nA
VGS=20V
VGS=-20V
Version: 1.1
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SSFD6046
Qg
Total gate charge
—
7.5
—
Qgs
Gate-to-Source charge
—
1.2
—
Qgd
Gate-to-Drain("Miller") charge
—
2
—
VGS=10V
td(on)
Turn-on delay time
—
4.5
—
VDD=30V
tr
Rise time
—
3.5
—
td(off)
Turn-Off delay time
—
16
—
tf
Fall time
—
2
—
VGS=10V
Ciss
Input capacitance
—
450
—
VGS=0V
Coss
Output capacitance
—
60
—
Crss
Reverse transfer capacitance
—
25
ID=12A
nC
nS
pF
VDD=30V
ID=2A ,RL=2.5Ω
RG=3Ω
VDS=30V
f=1.0MHZ
—
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
Min.
Typ.
Max.
—
—
12
Units
MOSFET symbol
A
—
—
30
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1
V
TJ=25ْC,IS=1A,VGS=0V ③
trr
Reverse Recovery Time
—
25
—
nS
TJ=25ْC,IF=12A
Qrr
Reverse Recovery Charge
—
30
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.1mH, VDD = 40V,Id=10A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
©Silikron Semiconductor Corporation
2010.09.01
Version: 1.1
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SSFD6046
©Silikron Semiconductor Corporation
2010.09.01
Version: 1.1
page
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SSFD6046
Mechanical Data:
TO-252E-2-M PACKAGE INFORMATION
Dimensions in Millimeters
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor Corporation
2010.09.01
Version: 1.1
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