SSF4006
Feathers:
ID =160A
Advanced trench process technology
BV=40V
avalanche energy, 100% test
Rdson=0.005Ω
Fully characterized avalanche voltage and current
Description:
The SSF4006 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF4006 TOP View (T0-220)
and electrical parameter repeatability. SSF4006 is assembled
in high reliability and qualified assembly house.
Application:
Commercial-industrial application
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25ْ C
Continuous drain current,VGS@10V
160
ID@Tc=100ْC
Continuous drain current,VGS@10V
100
IDM
Pulsed drain current ①
640
Power dissipation
150
W
Linear derating factor
2.0
W/ْ C
Gate-to-Source voltage
±20
V
480
mJ
PD@TC=25ْC
VGS
EAS
Single pulse avalanche energy
②
Units
A
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
–55 to +150
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.83
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
40
—
RDS(on) Static Drain-to-Source on-resistance
—
VGS(th)
2.0
—
4.0
—
—
1
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor CO.,LTD.
2009.6.10
Max. Units
—
0.0045 0.005
Test Conditions
V
VGS=0V,ID=250μA
Ω
VGS=10V,ID=30A
V
VDS=VGS,ID=250μA
VDS=40V,VGS=0V
μA VDS=40V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version : 1.0
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SSF4006
90
—
ID=30A,VGS=10V
Qg
Total gate charge
Qgs
Gate-to-Source charge
—
14
—
Qgd
Gate-to-Drain("Miller") charge
—
24
—
td(on)
Turn-on delay time
—
18.2
Rise time
—
15.6
Turn-Off delay time
—
70.5
Fall time
—
13.8
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
300
Crss
Reverse transfer capacitance
—
240
tr
td(off)
tf
nC
VDD=30V
VDD=30V
nS
ID=2A ,RL=15Ω
RG=2.5Ω
pF VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
160
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
—
—
640
—
—
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
－
57
—
nS
TJ=25ْC,IF=75A
－
107
—
μC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 47V,Id=57A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
©Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
page
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SSF4006
EAS Test Circuit:
Gate Charge Test Circuit:
Switch Time Test Circuit:
©Silikron Semiconductor CO.,LTD.
Switch Waveform:
2009.6.10
Version : 1.0
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SSF4006
TO-220 MECHANICAL DATA:
©Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
page
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