EMF9 Transistors Power management (dual transistors) EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.22 !External dimensions (Units : mm) Each lead has same dimensions Abbreviated symbol : F9 !Equivalent circuits (3) (2) (1) Tr1 Tr2 (4) (5) (6) !Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF9 EMT6 F9 T2R 8000 1/5 EMF9 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Tj Junction temperature Tstg Range of storage temperature Limits 15 12 6 500 1.0 150 −55~+150 Unit V V V mA A °C °C Limits 30 ±20 100 200 100 200 150 −55~+150 Unit V V mA mA mA mA °C °C Symbol Limits Unit PD 150(TOTAL) ∗ ∗ Single pulse PW=1ms Tr2 Symbol Parameter VDSS Drain-source voltage VGSS Gate-source voltage ID Continuous Drain current IDP Pulsed IDR Continuous Reverse drain current IDRP Pulsed Tch Channel temperature Tstg Range of storage temperature ∗ ∗ ∗ PW≤10ms Duty cycle≤50% Tr1, Tr2 Parameter Total power dissipation mW ∗ ∗ 120mW per element must not be exceeded. Each terminal mounted on a recommended land. !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 − − − 270 − − Typ. − − − − − 100 − 320 7.5 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=−10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Symbol IGSS V(BR)DSS IDSS VGS(th) Min. − 30 − 0.8 − − 20 − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Unit µA V µA V Ω Ω mS pF pF pF ns ns ns ns Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100µA ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA Tr2 Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time RDS(on) |Yfs| Ciss Coss Crss td(on) tr td(off) tf VDS=5V, VGS=0V, f=1MHz ID=10mA, VDD 5V, VGS=5V, RL=500Ω, RGS=10Ω 2/5 EMF9 Transistors 0.2 Ta=25° 10 0.4 0.6 0.8 1.0 1.2 1.4 1 10 BASE TO EMITTER VOLTAGE : VBE (V) 100 Ta=125°C 25°C −40°C 10 1 1 10 100 1000 1000 1000 IC/IB=20 Pulsed Ta=25°C 1000 Ta=−40°C Ta=125°C 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 10000 IC/IB=20 Pulsed BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.1 Grounded emitter propagation characteristics 1000 Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=−40°C 100 1 0 Fig.2 DC current gain vs. collector current Ta=25°C Fig.5 Base-emitter saturation voltage vs. collector current 1000 Ta=25°C Pulsed 100 IC/IB=50 10 IC/IB=20 IC/IB=10 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 1000 TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE C Ta= −40° C °C 1 VCE=2V Pulsed Ta=125°C 100 10 COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Pulsed Ta=12 5 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves Tr1 VCE=2V Ta=25°C Pulsed 100 10 1 1 10 100 1000 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C 100 Cib 10 1 0.1 Cob 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/5 EMF9 Transistors 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m 0.1m 0 1 3 2 1.5 1 0.5 0 −50 −25 4 VGS=2.5V Pulsed 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) Ta=−25°C 25°C 75°C 125°C 0.01 0.005 0.002 0.0005 0.001 0.002 0.005 0.01 0.02 10 5 2 1 0.5 0.001 0.002 5 ID=0.05A 10 15 0.05 0.1 0.2 0.5 DRAIN CURRENT : ID (A) Fig.15 Forward transfer admittance vs. drain current 200m 9 50m Ta=125°C 75°C 25°C −25°C 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 0.5 7 ID=100mA 6 ID=50mA 5 4 3 2 1 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) 20m 10m 0.2 VGS=4V Pulsed 8 0 −50 −25 20 VGS=0V Pulsed 100m 0.05 0.1 Fig.11 Static drain-source on-state resistance vs. drain current ( Ι ) ID=0.1A 5 0.005 0.01 0.02 DRAIN CURRENT : ID (A) Fig.13 Static drain-source on-state resistance vs. gate-source voltage REVERSE DRAIN CURRENT : IDR (A) VDS=3V Pulsed 0.02 0.001 0.0001 0.0002 Ta=125°C 75°C 25°C −25°C 20 GATE-SOURCE VOLTAGE : VGS (V) 0.2 0.05 125 150 10 0 0 0.5 Fig.12 Static drain-source on-state resistance vs. drain current ( ΙΙ ) 0.1 100 Ta=25°C Pulsed DRAIN CURRENT : ID (A) 0.5 75 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 50 Fig.10 Gate threshold voltage vs. channel temperature Fig.9 Typical transfer characteristics Ta=125°C 75°C 25°C −25°C 25 0 VGS=4V Pulsed CHANNEL TEMPERATURE : Tch (°C) GATE-SOURCE VOLTAGE : VGS (V) 50 50 VDS=3V ID=0.1mA Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) 50m 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS=3V Pulsed 100m 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.16 Reverse drain current vs. source-drain voltage ( Ι ) Fig.14 Static drain-source on-state resistance vs. channel temperature REVERSE DRAIN CURRENT : IDR (A) 200m GATE THRESHOLD VOLTAGE : VGS(th) (V) Tr2 200m Ta=25°C Pulsed 100m 50m 20m VGS=4V 10m 0V 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.17 Reverse drain current vs. source-drain voltage ( ΙΙ ) 4/5 EMF9 Transistors 50 Ciss 10 5 Coss Crss 2 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITHING TIME : t (ns) 20 CAPACITANCE : C (pF) 1000 Ta=25°C f=1MHZ VGS=0V td(off) 200 100 50 20 tr td(on) 10 5 0.5 0.1 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA) Fig.18 Typical capacitance vs. drain-source voltage Fig.19 Switching characteristics 5/5