JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×2-6L-I Power Management Transistors- MOSFET CJMNT33 PNP Power Transistor with N-MOSFET V(BR)DSS/BVCEO ID/IC RDS(on)MAX 600mΩ@4.5V 20V 650mΩ@2.5V 0.8A -32V 700mΩ@1.8V / -1.5A FEATURE z Ultra low collector-to-emitter saturation voltage z High DC current gain z Small package DFNWB2×2-6L-I DFNWB2×2-6L-I APPLICATION z Charging circuit z Other power management in portable equipment Equivalent circuit MARKING ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit PNP Transistor VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -6 V Collector Current-Continuous(Note1) -1.5 A Collector Current-Continuous(Note2) -0.6 A Collector Current-Pulse(Note3) -4 A VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±5 V Continuous Drain Current (note 1) 0.8 A Collector Current-Continuous(Note2) 0.69 A Collector Current-Pulse(Note3) 1.4 A IC ICM N-MOSFET ID IDM Power Dissipation, Temperature and Thermal Resistance PD PowerDissipation 0.7 W PC Power Dissipation (Tc=25℃ ,Note1) 2.5 W RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature TL Lead Temperature 178.6 150 ℃/W ℃ -55~+150 ℃ 260 ℃ 1 C,May,215 ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit PNP Transistor Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -32 Collector-emitter breakdown V(BR)CEO IC=-10mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100uA,IC=0 -6 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA DC current gain V hFE VCE=-2V,IC=-0.5A Collecor-emitter saturation voltage VCE(sat) IC=-0.5A,IB=-50mA 100 -0.35 300 V Base-emitter saturation voltage VBE(sat) IC=-0.5A,IB=-50mA -1.5 V Base-emitter voltage VBE(on) VCE=-2V,IC=-500mA -1.1 V V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 100 nA Gate-body leakage current IGSS VGS =±5V, VDS = 0V ±1 uA VGS(th) VDS =VGS, ID =250µA N-MOSFET STATIC PARAMETERS Drain-source breakdown voltage Gate threshold voltage (note 3) Drain-source on-resistance(note 3) Diode forward voltage (note 3) RDS(on) VSD 20 V 1.1 V VGS =4.5V, ID =0.55A 600 mΩ VGS =2.5V, ID =0.5A 650 mΩ VGS =1.8V, ID =0.35A 700 mΩ 1.1 V IS=0.35A, VGS = 0V 0.44 0.5 DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 61 VDS =10V,VGS =0V,f =100KHz 17 pF pF 10 pF 33 ns 102 ns 790 ns 439 ns 1.15 nC 0.15 nC 0.23 nC SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) tf Total Gate Charge Qg Gate-Source Chage Qgs Gage-Drain Charge Qgd VGEN=4.5V,VDD=10V, ID=500mA,RGEN=6Ω RL=10Ω VDS=10V,VGS=4.5V ID=0.6A Notes : 1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper. 2.Surface mounted on FR4 board using the minimum pad size,1oz copper. 3. Pulse test : Pulse width=300μs, duty cycle≤2%. 4. These parameters have no way to verify. www.cj-elec.com 2 C,May,2015 Typical Characteristics PNP Transistor Static Characteristic -0.60 COMMON EMITTER Ta=25℃ -3.2mA -0.50 -2.8mA -0.45 -2.4mA -0.40 -2mA -0.35 -1.6mA -0.30 -0.25 -1.2mA -0.20 -800uA -0.15 —— IC Ta=100℃ DC CURRENT GAIN hFE -3.6mA -4mA -0.55 COLLECTOR CURRENT IC (A) hFE 1000 300 Ta=25℃ 100 30 -0.10 IB=-400uA -0.05 -0.00 -0.0 -0.5 -1.0 -1.5 -2.0 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— -2.5 -1 -3.0 -10 (V) VCE -100 COLLECTOR CURRENT IC VBEsat -2000 IC -1000 (mA) IC —— -300 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCE=-2V 10 -1000 Ta=100℃ -100 Ta=25℃ -30 -10 Ta=25℃ Ta=100℃ -300 -3 β=10 -1 -1 -3 -10 -100 -30 COLLECTOR CURRENT VBE -1500 IC -300 β=10 -100 -1000 -1500 -1 (mA) -3 -30 -10 -100 COLLECTOR CURRENT —— IC Cob/ Cib 100 IC -1000 -1500 -300 (mA) —— VCB/ VEB -1000 Ta=100℃ -100 Ta=25℃ -30 -10 30 Cob 10 3 f=1MHz IE=0/IC=0 -3 -1 -200 Ta=25℃ VCE=-2V -400 -600 -800 BASE-EMMITER VOLTAGE fT 1000 TRANSITION FREQUENCY fT (MHz) CAPACITANCE C (pF) COLLCETOR CURRENT IC (mA) Cib -300 —— -1000 VBE -1200 1 -0.1 -0.3 -1 REVERSE VOLTAGE (mV) -10 -3 V -20 (V) IC 300 100 30 VCE=-10V Ta=25℃ 10 -1 -3 -10 COLLECTOR CURRENT www.cj-elec.com -30 IC -100 (mA) 3 C,May,2015 Typical Characteristics N -channel Characteristics Output Characteristics 5 Ta=25℃ Transfer Characteristics 500 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 3.5V 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS VGS Ta=25℃ Ta=25℃ Pulsed Pulsed VGS=1.8V 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 3.0 (V) ON-RESISTANCE VGS=2.5V VGS=4.5V 200 400 ID=600mA 300 100 0 100 200 200 400 600 DRAIN CURRENT ID 1 800 IS —— VSD 500 3 4 (V) 5 (V) 0.80 THRESHOLD VOLTAGE VTH IS (mA) VGS Threshold Voltage 0.85 100 SOURCE CURRENT 2 GATE TO SOURCE VOLTAGE (mA) Ta=100℃ 10 Pulsed Ta=25℃ Pulsed 1 0.1 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 0.75 ID=250uA 0.70 0.65 0.60 25 1.2 VSD (V) 50 75 JUNCTION TEMPERATURE 4 100 TJ 125 (℃ ) C,May,2015 I N1 Symbol A A1 A3 D E D1 E1 D2 E2 e1 e2 k b e L Dimensions In Millimeters Max. Min. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.850 1.050 0.700 0.900 0.200 0.400 0.700 0.900 0.650TYP. 0.325TYP 0.200MIN. 0.250 0.350 0.650TYP. 0.300 0.400 Dimensions In Inches Min. Max. 0.028 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.033 0.041 0.028 0.035 0.008 0.016 0.028 0.035 0.026TYP. 0.013TYP 0.008MIN. 0.010 0.014 0.026TYP. 0.012 0.016 I www.cj-elec.com 5 C,May,2015 DFNWB2X2-6L Tape and Reel www.cj-elec.com 6 C,May,2015