dc8f1b747bc0cdbfeb7d081c8f1296bf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-I Power Management Transistors- MOSFET
CJMNT33
PNP Power Transistor with N-MOSFET
V(BR)DSS/BVCEO
ID/IC
RDS(on)MAX
[email protected]
20V
[email protected]
0.8A -32V
[email protected]
/
-1.5A
FEATURE
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2×2-6L-I
DFNWB2×2-6L-I
APPLICATION
z Charging circuit
z Other power management in portable equipment
Equivalent circuit
MARKING
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
PNP Transistor
VCBO
Collector-Base Voltage
-32
V
VCEO
Collector-Emitter Voltage
-32
V
VEBO
Emitter-Base Voltage
-6
V
Collector Current-Continuous(Note1)
-1.5
A
Collector Current-Continuous(Note2)
-0.6
A
Collector Current-Pulse(Note3)
-4
A
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±5
V
Continuous Drain Current (note 1)
0.8
A
Collector Current-Continuous(Note2)
0.69
A
Collector Current-Pulse(Note3)
1.4
A
IC
ICM
N-MOSFET
ID
IDM
Power Dissipation, Temperature and Thermal Resistance
PD
PowerDissipation
0.7
W
PC
Power Dissipation (Tc=25℃ ,Note1)
2.5
W
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
TL
Lead Temperature
178.6
150
℃/W
℃
-55~+150
℃
260
℃
1 C,May,215
ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
PNP Transistor
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-32
Collector-emitter breakdown
V(BR)CEO
IC=-10mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100uA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
uA
DC current gain
V
hFE
VCE=-2V,IC=-0.5A
Collecor-emitter saturation voltage
VCE(sat)
IC=-0.5A,IB=-50mA
100
-0.35
300
V
Base-emitter saturation voltage
VBE(sat)
IC=-0.5A,IB=-50mA
-1.5
V
Base-emitter voltage
VBE(on)
VCE=-2V,IC=-500mA
-1.1
V
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
100
nA
Gate-body leakage current
IGSS
VGS =±5V, VDS = 0V
±1
uA
VGS(th)
VDS =VGS, ID =250µA
N-MOSFET
STATIC PARAMETERS
Drain-source breakdown voltage
Gate threshold voltage (note 3)
Drain-source on-resistance(note 3)
Diode forward voltage (note 3)
RDS(on)
VSD
20
V
1.1
V
VGS =4.5V, ID =0.55A
600
mΩ
VGS =2.5V, ID =0.5A
650
mΩ
VGS =1.8V, ID =0.35A
700
mΩ
1.1
V
IS=0.35A, VGS = 0V
0.44
0.5
DYNAMIC PARAMETERS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
61
VDS =10V,VGS =0V,f =100KHz
17
pF
pF
10
pF
33
ns
102
ns
790
ns
439
ns
1.15
nC
0.15
nC
0.23
nC
SWITCHING PARAMETERS (note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
tf
Total Gate Charge
Qg
Gate-Source Chage
Qgs
Gage-Drain Charge
Qgd
VGEN=4.5V,VDD=10V,
ID=500mA,RGEN=6Ω
RL=10Ω
VDS=10V,VGS=4.5V
ID=0.6A
Notes :
1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper.
2.Surface mounted on FR4 board using the minimum pad size,1oz copper.
3. Pulse test : Pulse width=300μs, duty cycle≤2%.
4. These parameters have no way to verify.
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2
C,May,2015
Typical Characteristics
PNP Transistor
Static Characteristic
-0.60
COMMON
EMITTER
Ta=25℃
-3.2mA
-0.50
-2.8mA
-0.45
-2.4mA
-0.40
-2mA
-0.35
-1.6mA
-0.30
-0.25
-1.2mA
-0.20
-800uA
-0.15
——
IC
Ta=100℃
DC CURRENT GAIN hFE
-3.6mA
-4mA
-0.55
COLLECTOR CURRENT IC (A)
hFE
1000
300
Ta=25℃
100
30
-0.10
IB=-400uA
-0.05
-0.00
-0.0
-0.5
-1.0
-1.5
-2.0
COLLECTOR-EMITTER VOLTAGE
VCEsat
-1000
——
-2.5
-1
-3.0
-10
(V)
VCE
-100
COLLECTOR CURRENT
IC
VBEsat
-2000
IC
-1000
(mA)
IC
——
-300
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
VCE=-2V
10
-1000
Ta=100℃
-100
Ta=25℃
-30
-10
Ta=25℃
Ta=100℃
-300
-3
β=10
-1
-1
-3
-10
-100
-30
COLLECTOR CURRENT
VBE
-1500
IC
-300
β=10
-100
-1000 -1500
-1
(mA)
-3
-30
-10
-100
COLLECTOR CURRENT
—— IC
Cob/ Cib
100
IC
-1000 -1500
-300
(mA)
—— VCB/ VEB
-1000
Ta=100℃
-100
Ta=25℃
-30
-10
30
Cob
10
3
f=1MHz
IE=0/IC=0
-3
-1
-200
Ta=25℃
VCE=-2V
-400
-600
-800
BASE-EMMITER VOLTAGE
fT
1000
TRANSITION FREQUENCY fT (MHz)
CAPACITANCE C (pF)
COLLCETOR CURRENT IC (mA)
Cib
-300
——
-1000
VBE
-1200
1
-0.1
-0.3
-1
REVERSE VOLTAGE
(mV)
-10
-3
V
-20
(V)
IC
300
100
30
VCE=-10V
Ta=25℃
10
-1
-3
-10
COLLECTOR CURRENT
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-30
IC
-100
(mA)
3
C,May,2015
Typical Characteristics
N -channel Characteristics
Output Characteristics
5
Ta=25℃
Transfer Characteristics
500
5.5V
VDS=16V
Pulsed
Pulsed
4.5V
4
400
(mA)
ID
3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
3.5V
2.5V
2
1
300
Ta=100℃
200
Ta=25℃
100
VGS=1.5V
0
0.0
0.5
1.0
1.5
2.0
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
600
2.5
VDS
0
0.0
3.0
(V)
0.5
1.0
1.5
2.0
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
500
——
2.5
VGS
VGS
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=1.8V
300
RDS(ON)
RDS(ON)
400
ON-RESISTANCE
(mΩ)
(mΩ)
500
3.0
(V)
ON-RESISTANCE
VGS=2.5V
VGS=4.5V
200
400
ID=600mA
300
100
0
100
200
200
400
600
DRAIN CURRENT
ID
1
800
IS —— VSD
500
3
4
(V)
5
(V)
0.80
THRESHOLD VOLTAGE
VTH
IS (mA)
VGS
Threshold Voltage
0.85
100
SOURCE CURRENT
2
GATE TO SOURCE VOLTAGE
(mA)
Ta=100℃
10
Pulsed
Ta=25℃
Pulsed
1
0.1
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
0.75
ID=250uA
0.70
0.65
0.60
25
1.2
VSD (V)
50
75
JUNCTION TEMPERATURE
4
100
TJ
125
(℃ )
C,May,2015
I
N1
Symbol
A
A1
A3
D
E
D1
E1
D2
E2
e1
e2
k
b
e
L
Dimensions In Millimeters
Max.
Min.
0.700
0.800
0.000
0.050
0.203REF.
1.924
2.076
1.924
2.076
0.850
1.050
0.700
0.900
0.200
0.400
0.700
0.900
0.650TYP.
0.325TYP
0.200MIN.
0.250
0.350
0.650TYP.
0.300
0.400
Dimensions In Inches
Min.
Max.
0.028
0.032
0.000
0.002
0.008REF.
0.076
0.082
0.076
0.082
0.033
0.041
0.028
0.035
0.008
0.016
0.028
0.035
0.026TYP.
0.013TYP
0.008MIN.
0.010
0.014
0.026TYP.
0.012
0.016
I
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5
C,May,2015
DFNWB2X2-6L Tape and Reel
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6
C,May,2015