4N60F - Weitron

4N60
Surface Mount N-Channel Power MOSFET
DRAIN CURRENT
P b Lead(Pb)-Free
4 AMPERES
DRAIN SOURCE VOLTAGE
600 VOLTAGE
Description:
The WEITRON 4N60 is a high voltage MOSFET and is designed
to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used
at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
D-PAK3/(TO-251)
2 DRAIN
Features:
*
*
*
*
*
*
D-PAK/(TO-252)
R DS(ON) =2.5 Ohms @VGS
Ultra low gate charge =10V
Low reverse transfer Capacitance
1 GATE
Fast switching capability
Avalanche energy Specified
Improved dv/dt capability, high ruggedness
Maximum Ratings(T
A
TO-220
3
TO-220F
SOURCE
=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
±30
Avalanche Current - (Note 1)
I AR
4.4
Continuous Drain Current @ T C=25˚C
@ T C=100˚C
ID
4.0
2.8
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)
IDM
16
Avalanche Energy, Single Pulsed (Note 2)
E AS
276
mJ
Avalanche Energy, Repetitive, Limited by TJMAX
E AR
10.6
mJ
dv/dt
4.5
V/ns
PD
100
33
77
0.8
0.26
0.69
W
TJ,Tstg
-55~+150
˚C
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation
4N60P(T C=25˚C)
4N60F(T C=25˚C)
4N60I/D(TC=25˚C)
4N60P( Derate above25˚C)
4N60F( Derate above25˚C)
4N60I/D( Derate above25˚C)
Operating Junction and Storage Temperature Range
Unit
V
A
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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4N60
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
BVDSS
600
-
-
VGS(Th)
2.0
-
4.0
IGSS
-
-
100
-100
-
-
10
-
-
100
RDS(on)
-
-
2.5
gfs
-
4.0
-
∆BV DSS
/∆TJ
-
0.6
-
Ciss
-
672
-
Coss
-
66
-
Crss
-
4.7
11
Turn-on Delay Time
VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5)
td(on)
-
27
-
Turn-on Rise Time
VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5)
tr
-
19
Turn-off Delay Time
VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5)
td(off)
-
160
-
Turn-off Fall Time
VDD =300V,ID =4.4A,R G=25Ω(Note 4, 5)
tf
-
22
-
Total Gate Charge
VDS=480V,VGS=10V,I D=4.4(Note 4, 5)
Qg
-
19.8
-
Gate-Source Charge
VDS=480V,VGS=10V,I D=4.4(Note 4, 5)
Qgs
-
4.0
-
Gate-Drain Change
VDS=480V,VGS=10V,I D=4.4(Note 4, 5)
Qgd
-
7.2
-
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
@V GS=0,ID=250μA
@V DS=VGS,ID=250μA
Gate-Source Leakage current
[email protected] GS=30V,V DS=0V
[email protected] GS=-30V,VDS=0V
Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0
Drain-SourceLeakage Current(Tj=125˚C) @VDS=480V,VGS=0
Drain-Source On-State Resistance @VGS=10V,I D=2.0A
Forward Transconductance @VDS=50V,I D=2.2A(Note 4)
Breakdown Voltage Temperature Coefficient
I D =250 µA, Referenced to 25°C
IDSS
V
nA
μA
Ω
S
V/˚C
Dynamic
Input Capacitance
Output Capacitance
@VGS=0V,VDS=25V,f=1.0MHz
@VGS=0V,VDS=25V,f=1.0MHz
Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz
pF
Switching
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13-Apr-2011
4N60
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VSD
-
-
1.4
V
Maximum Continuous Drain-Source Diode Forward Current
IS
-
-
4.4
A
Maximum Pulsed Drain-Source Diode Forward Current
I SM
-
-
16.0
A
Reverse Recovery Time @VGS=0V,IS=4A,dlF/dt=100A/µs (Note 4)
T rr
-
300
-
ns
Reverse Recovery Charge @VGS=0V,IS=4A,dlF/dt=100A/µs(Note 4)
Q rr
-
3.4
-
µC
-
62.5
120
112
°C/W
-
1.25
3.79
2.2
°C/W
Source-Drain Diode Characteristics
Drain-Source Diode Forward Voltage
@VGS=0V,IS=4.0A
Thermal Data
Junction-to-Ambient
4N60P
4N60F
4N60I/D
θJA
-
Junction-to-Case
4N60P
4N60F
4N60I/D
θJC
-
Note: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 30mH, IAS = 3.81A, VDD = 175V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Ordering Information
Order Number
Pin Assignment
Packing
Package
1
2
3
4N60P
TO-220
G
D
S
Tube
4N60F
TO-220F
G
D
S
Tube
4N60I
D-PAK3/TO-251
G
D
S
Tube
4N60D
D-PAK/TO-252
G
D
S
Tube
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4N60
Test Circuits And Waveforms
+
D.U.T.
VDS
+
-
L
RG
Driver
Same Type
as D.U.T.
VGS
VDD
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
I FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4N60
Test Circuits And Waveforms(cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
t D(ON )
Pulse Width ≤ 1μs
tD (OFF)
tF
tR
Duty Factor ≤0.1%
Fig. 2A Switching Test Circuit
Same Type
as D.U.T.
50kΩ
12V
0.2μF
Fig. 2B Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
10V
VDD
D.U.T.
tp
IAS
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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13-Apr-2011
4N60
Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1.0
Note:
1. VGS=0V
2. ID=250µA
0.9
0.8
50 100 150 200
-100 -50 0
Junction Temperature, TJ (℃)
On-Resistance Junction Temperature
Drain-Source On-Resistance,
R DS(ON) (Normalized)
Drain-Source Breakdown Voltage,
BVDSS (Normalized)
Typical Characteristics
3.0
2.5
2.0
1.5
Note:
1. VGS=10V
2. ID=4A
1.0
0.5
0.0
-100 -50
Maximum Drain Current vs. Case
Temperature
5
1ms
10ms
Notes:
1. T J=25 ℃
2. TJ=150℃
3. Single Pulse
0.1
1
10
Drain Current, ID (A)
Drain Current, I D (A)
100 µs
1
DC
4
3
2
1
0
Drain-Source Voltage, VDS (V)
50
75 100 125
Case Temperature, TC (℃)
On-State Characteristics
Transfer Characteristics
10
V GS
Top : 10V
9V
8V
7V
6V
5.5V
5V
Bottorm :5.0V
0.1
100
1000
5.0V
Notes:
1. 250µs Pulse Test
2. TC=25℃
25℃
1
0.1
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150℃
Notes:
1. VDS =50V
2. 250 µs Pulse Test
2
4
6
8
10
Gate-Source Voltage, VGS (V)
0.1
1
10
Drain-to-Source Voltage, VDS (V)
WEITRON
25
10
Drain Current, I D (A)
Drain Current, ID (A)
Operation in This Area is Limited by
R DS(on )
1
50 100 150 200
Junction Temperature, TJ (℃)
Maximum Safe Operating Area
10
0
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13-Apr-2011
4N60
Typical Characteristics
On State Current vs. Allowable Case
Temperature
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance,
RDS(ON) (ohm)
On-Resistance Variation vs. Drain
Current and Gate Voltage
6
5
VGS =20V
4
VGS=10V
3
2
1
0
Note: T J=25ć
6
8
10 12
2
4
Drain Current, I D (A)
0
10
150ć
25ć
1
Notes:
1. VGS=0V
2. 250μs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
1200
12
Gate-Source Voltage, VGS (V)
Ciss=Cgs +Cgd (Cds=shorted )
Coss=Cds +Cgd Crs s=Cgd
1000
Capacitance (pF)
Gate Charge Characteristics
Ciss
800
Coss
600
Notes:
1. V GS =0V
2. f = 1MHz
400
200
Crss
10
VDS=300V
VDS=480V
8
VDS=120V
6
4
2
Note: I D=4A
0
0
0.1
1
0
10
5
10
15
20
25
Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
Transient Thermal Response
Curve
Power Dissipation
120
100
80
PD (w)
Thermal Response, șJC (t)
1
0.1
40
Notes :
1. ӰJ C (t) = 1.18ć/ W Max.
2. Duty Factor , D=t 1/t2
3. TJ M-TC=P DM×ӰJC (t)
20
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
0
10
Square Wave Pulse Duration, t1 (sec)
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0 20 40 60 80 100 120 140 160
T C (°C)
13-Apr-2011
4N60
TO-220 Outline Dimensions
Unit:mm
TO-220
A
D
C1
Dim
A
A1
B
B1
C
C1
D
E
E1
G
G1
F
H
L
L1
Ø
F
H
E1
E
B1
L1
A1
L
B
G
C
G1
Φ
M in
M ax
4.67
4.47
2.82
2.52
0.91
0.71
1.37
1.17
0.53
0.31
1.37
1.17
10.31
10.01
8.90
8.50
12.06
12.446
2.54 TYP
4.98
5.18
2.89
2.59
0.30
0.00
13.4
13.8
3.96
3.56
3.93
3.73
TO-220F Outline Dimensions
Unit:mm
TO-220F
Symbol Dimension 1
A
3.3±0.15
B
2.55±0.20
C
4.72±0.2
D
1.47MAX
L
15.75±0.30
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Dimension 2
2.70±0.75
3.0±0.20
4.5±0.20
1.75MAX
15±0.30
13-Apr-2011
4N60
TO-251 Outline Dimensions
unit:mm
TO-251
E
A
G
4
H
B
1
2
Dim
A
B
C
D
E
G
H
J
K
L
M
N
J
3
M
N
K
D
C
L
M in
6 .4 0
6 .8 0
0 .5 0
2 .2 0
0 .4 5
1 .0 0
5 .4 0
0 .4 5
0 .9 0
6 .5 0
-
M ax
6 .8 0
7 .2 0
0 .8 0
2 .3 0
2 .5 0
0 .5 5
1 .6 0
5 .8 0
0 .6 9
1 .5 0
0 .9 0
1 . Em it t er
2 . Base
3 . Collect or
TO-252 Outline Dimensions
unit:mm
E
TO-252
A
G
4
H
Dim
A
B
C
D
E
G
H
J
K
L
M
J
1
2
3
B
M
K
D
C
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L
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Min
6.40
9.00
0.50
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
13-Apr-2011