MTB010N06I3

CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB010N06I3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=15A
60V
50A
9.8 mΩ(typ)
12.8 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
TO-251
MTB010N06I3
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
MTB010N06I3-0-UA-G
Package
TO-251
(Pb-free lead plating and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB010N06I3
CYStek Product Specification
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 2/ 8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 4)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 4)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.1mH, ID=40A, VDD=25V
(Note 2)
Symbol
VDS
VGS
IDM
IAS
Limits
60
±20
50
35
9.0
7.2
180
40
EAS
80
6
60
30
1.5
0.96
-55~+175
ID
IDSM
Repetitive Avalanche Energy
(Note 3)
EAR
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 1)
PD
(Note 1)
(Note 4)
(Note 4)
PDSM
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 4)
Symbol
RθJC
RθJA
Value
2.5
83
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
MTB010N06I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 3/ 8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
60
1.0
-
0.06
24
9.8
12.8
2.5
±100
1
10
12.5
17
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=10A
VGS=±20V
VDS =60V, VGS =0V
VDS =48V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VGS =4.5V, ID=15A
25.1
14.7
1.0
10.7
10
19.2
40.6
13.6
964
194
88
1.3
-
0.69
14.8
10.6
50
1
-
Dynamic
*Qg(VGS=10V)
*Qg(VGS=4.5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*VSD
*trr
*Qrr
-
μA
mΩ
nC
VDD=48V, ID=15A,VGS=10V
ns
VDD=30V, ID=15A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
VGS=0, IF=15A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB010N06I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 4/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
ID, Drain Current (A)
150
120
BVDSS, Normalized Drain-Source
Breakdown Voltage
180
VGS=6V
90
VGS=5V
60
VGS=4.5V
VGS=4V
30
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=3.5V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=4.5V
10
VGS=0V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
R DS(on), Normalized Static DrainSource On-State Resistance
70
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=30A
60
50
40
30
20
10
2.0
VGS=10V, ID=30A
RDS(ON) @Tj=25°C : 9.8mΩ typ.
1.6
1.2
0.8
VGS=4.5V, ID=15A
RDS(ON) @Tj=25°C : 12.8mΩtyp.
0.4
0.0
0
0
MTB010N06I3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
1
ID=1mA
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-65
100
-35
-5
85
115 145 175
Gate Charge Characteristics
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
55
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
0.01
0.001
8
6
4
VDS=48V
ID=15A
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
60
RDSON
Limited
100
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
25
100μ s
1ms
10ms
10
100ms
1s
1
TC=25°C, Tj=175°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
DC
50
40
30
20
10
VGS=10V, RθJC=2.5°C/W
0
0.1
0.1
MTB010N06I3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 6/ 8
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
3000
180
160
2700
VDS=10V
2100
120
Power (W)
ID, Drain Current(A)
TJ(MAX) =175°C
TC=25°C
θ JC=2.5°C/W
2400
140
100
80
1800
1500
1200
60
900
40
600
20
300
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=2.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB010N06I3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB010N06I3
CYStek Product Specification
Spec. No. : C137I3
Issued Date : 2015.05.05
Revised Date :
Page No. : 8/ 8
CYStech Electronics Corp.
TO-251 Dimension
Marking:
Product
Name
B010
N06
□□□□
Date
Code
1
2
3
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Millimeters
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF
0.60
0.90
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.252
0.268
0.205
0.217
0.268
0.283
0.283
0.307
0.091 REF
0.024
0.035
DIM
G
H
J
K
L
M
Millimeters
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Inches
Min.
Max.
0.020
0.028
0.087
0.094
0.018
0.022
0.018
0.024
0.035
0.059
0.213
0.228
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB010N06I3
CYStek Product Specification