MTEA0N10Q8 BVDSS

CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTEA0N10Q8
BVDSS
ID
RDSON@VGS=10V, ID=4A
RDSON@VGS=5.5V, ID=3A
100V
5.6A
76mΩ(typ)
90mΩ(typ)
Features
• Single Drive Requirement
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTEA0N10Q8
SOP-8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTEA0N10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTEA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V,TC=100°C
Continuous Drain Current @VGS=10V,TA=25°C
Continuous Drain Current @VGS=10V,TA=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=5.6A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=100℃
Symbol
Limits
VDS
VGS
100
±20
5.6
4.0
4.0
2.8
30
2
15.6
0.6
6
3
3
1.5
-55~+175
(Note 1)
(Note 1)
(Note 2)
ID
(Note 2)
(Note 2)
(Note 3)
IDM
IAS
EAS
EAR
(Note 1)
(Note 1)
(Note 2)
PD
(Note 2)
Operating Junction and Storage Temperature Range
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25
°C/W
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Rth,j-a
50
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
MTEA0N10Q8
*1
Min.
Typ.
Max.
Unit
100
2.0
-
3.0
7
76
90
3.5
±100
1
25
100
130
V
V
S
nA
μA
mΩ
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=4A
VGS=±20V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
VGS =10V, ID=4A
VGS =5.5V, ID=3A
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
Typ.
Max.
-
361
54
20
12
1.7
3.8
22
21
64
35
-
-
0.8
30
18
4
16
1.2
-
Unit
Test Conditions
pF
VGS=0V, VDS=25V, f=1MHz
nC
VDS=50V, VGS=10V, ID=5.6A
ns
VDS=50V, ID=1A, VGS=10V, RGS=6Ω
A
V
ns
nC
IS=4A, VGS=0V
IF=4A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTEA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10V
9V
8V
7V
ID, Drain Current (A)
25
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.4
30
VGS=6V
20
15
10
VGS=5V
5
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=4.5V
VGS=6V
100
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
2.8
ID=4A
360
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
320
280
240
200
160
120
80
40
2.4
VGS=10V, ID=4A
2
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 72mΩ typ.
0
0
0
MTEA0N10Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=80V
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
0.01
0.001
VDS=50V
8
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
VDS=20V
6
4
2
ID=5.6A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
14
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
7
RDSON
Limited
10
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100μ s
1ms
1
10ms
100ms
0.1
TC=25°C, Tj=175°C
VGS=10V, θ JC=25°C/W
Single Pulse
1s
DC
6
5
4
3
2
1
VGS=10V, RθJC=25°C/W
0
0.01
0.1
MTEA0N10Q8
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
1000
30
900
ID, Drain Current(A)
Peak Transient Power (W)
VDS=10V
25
20
15
10
5
TJ(MAX) =175°C
TC=25°C
θ JC=25°C/W
800
700
600
500
400
300
200
100
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width(s)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=25 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTEA0N10Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTEA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTEA0N10Q8
CYStek Product Specification
Spec. No. : C871Q8
Issued Date : 2014.06.30
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
K
E
D
EA0
N10
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTEA0N10Q8
CYStek Product Specification