MTN20NF06J3

CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN20NF06J3
BVDSS
RDSON@VGS=10V, ID=30A
ID@ TC=25°C, VGS=10V
60V
10.6 mΩ(typ)
60A
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant package
• Repetitive Avalanche Rated
• Fast Switching Characteristic
Symbol
Outline
MTN20NF06J3
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTN20NF06J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
Power Dissipation (TC=25℃)
Derates above 25°C
Operating Junction and Storage Temperature
Symbol
Limits
VDS
VGS
60
±20
60
42
240
30
386
9
110
0.73
-55~+175
ID
(Note 1)
(Note 1)
(Note 2)
(Note 1)
IDM
IAR
EAS
EAR
PD
Tj, Tstg
Unit
V
A
mJ
W
W/°C
°C
Note : *1. Repetitive Rating : Pulse width limited by maximum junction temperature
*2. L=500μH, IAS=30A,VDD=25V, starting TJ=+25℃
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Maximum Lead Temperature for Soldering purpose
(Note)
Symbol
Rth,j-c
Rth,j-a
TJ
Value
1.36
110
275
Unit
°C/W
°C
Note : 1.6mm from case, for 10 seconds
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
MTN20NF06J3
Min.
Typ.
Max.
Unit
Test Conditions
60
2
-
0.06
13
10.6
4
±100
1
25
14
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=25A
VGS=±20V
VDS =60V, VGS =0V
VDS =48V, VGS =0V, TC=125°C
VGS =10V, ID=30A
-
53.5
12.9
16.6
29
18
50
10
-
μA
mΩ
nC
ID=60A, VDS=48V, VGS=10V
ns
VDS=30V, ID=30A, VGS=10V,
RGS=4.7Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
3180
160
81
-
20
19
50
200
1.5
-
pF
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 3/9
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IS=50A, VGS=0V
IS=50A, dIF/dt=100A/μs, VGS=0V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
100
ID, Drain Current(A)
80
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V
VGS=6V
60
VGS=5.5V
40
20
VGS=5V
1.2
1.0
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=4.5V
10
VGS=10V
1
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
70
R DS(ON) , Normalized Static DrainSource On-State Resistance
80
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=30A
60
50
40
30
20
10
2.2
VGS=10V, ID=30A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
RDS(ON) @Tj=25°C : 10.6mΩ typ.
0.4
0
0
MTN20NF06J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
75 100 125 150 175 200
Gate Charge Characteristics
100
10
VDS=10V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25 50
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=15V
1
0.1
Pulsed
Ta=25°C
0.01
0.001
8
6
4
VDS=48V
ID=60A
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
5
10 15 20 25 30 35 40 45 50 55 60
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
70
RDS(ON)
Limit
100
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
0
10 μs
100μs
1ms
10
TC=25°C, Tj=175°C,
VGS=10V,RθJC=1.36°C/W,
single pulse
1
10ms
100ms
DC
60
50
40
30
20
10
VGS=10V, RθJC=1.36°C/W
0
0.1
0.1
MTN20NF06J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC, Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 6/9
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
120
100
VDS=10V
PD, Power Dissipation(W)
90
ID, Drain Current (A)
80
70
60
50
40
30
20
100
80
60
40
20
10
0
0
0
2
4
6
8
VGS , Gate-Source Voltage(V)
0
10
25
50
75 100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
1
D=0.5
1.RθJC (t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.36 °C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN20NF06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2015.09.08
Page No. : 9/9
TO-252 Dimension
Marking:
4
Device
Name
CYS
20NF06
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN20NF06J3
CYStek Product Specification