MTEE2N20FP

CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTEE2N20FP
BVDSS
ID
RDS(ON)@VGS=10V, ID=2.9A
RDS(ON)@VGS=7V, ID=1A
200V
4A
650 mΩ(typ)
590 mΩ(typ)
Description
The MTEE2N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Symbol
Outline
MTEE2N20FP
G：Gate
D：Drain
S：Source
MTEE2N20FP
TO-220FP
G D S
CYStek Product Specification
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 2/ 10
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=10mH, ID=2Amps,
VDD=50V
(Note 2)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
TC=100°C
(Note 1)
Power Dissipation
TA=25°C
(Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
Symbol
Limits
VDS
VGS
IDM
IAR
200
±30
4*
2.8*
1.2
0.9
9*
2
EAS
20
EAR
2.5
25
12
2
1.3
ID
IDSM
PD
PDSM
TL
300
TPKG
260
Tj, Tstg
-55~+175
Unit
V
A
mJ
W
°C
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
RθJC
RθJA
Value
6
62.5
Unit
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
MTEE2N20FP
CYStek Product Specification
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 3/ 10
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
200
2.5
-
0.2
3.5
1
650
590
4.5
±100
10
100
800
730
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =40V, ID=1A
VGS=±30V
VDS =200V, VGS =0V
VDS =160V, VGS =0V, Tj=125°C
VGS =10V, ID=2.9A
VGS =7V, ID=1A
6.5
1.3
3.3
9
16
15
13
232
25
9.1
-
0.77
120
500
2
8
1.2
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
mΩ
nC
VDD=160V, ID=4A,VGS=10V
ns
VDD=100V, ID=4A, VGS=10V, RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
VGS=0, IF=2A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTEE2N20FP-0-UB-S
MTEE2N20FP
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 4/ 10
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current (A)
10V,9V,8V,7V,6.5V,6V
8
5.5V
6
4
VGS=5V
2
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
4
8
12
16
VDS, Drain-Source Voltage(V)
-75 -50 -25
20
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=10V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
1000
VGS=0V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
100
0.01
0.1
1
ID, Drain Current(A)
0
10
1
2
3
4
5
6
IDR , Reverse Drain Current(A)
7
8
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
2.8
ID=2.9A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
900
800
700
600
2.4
VGS=10V, ID=2.9A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 650mΩ
0.4
0
500
0
MTEE2N20FP
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 5/ 10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
10
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
0.2
1
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
180
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
10
1
0.1
VDS=40V
Ta=25°C
Pulsed
8
6
4
VDS=160V
ID=4A
2
0
0.01
0.001
0.01
0.1
ID, Drain Current(A)
0
1
2
4
6
Qg, Total Gate Charge(nC)
8
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
5
10
1ms
1
10ms
100ms
DC
0.1
TC=25°C, Tj=175°C
VGS=10V, θJC=6°C/W
Single Pulse
ID, Maximum Drain Current(A)
100μs
RDSON
Limited
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
4.5
4
3.5
3
2.5
2
1.5
1
VGS=10V, RθJC=6°C/W
0.5
0
0.01
0.1
MTEE2N20FP
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100 125 150
TC, Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 6/ 10
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
30
10
PD, Power Dissipation(W)
VDS=10V
ID, Drain Current(A)
8
6
4
25
20
15
10
2
5
0
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
0
25
50
75 100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=6°C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
MTEE2N20FP
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 7/ 10
Test Circuit and Waveforms
MTEE2N20FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 8/ 10
Test Circuit and Waveforms(Cont.)
MTEE2N20FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 9/ 10
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTEE2N20FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C881FP
Issued Date : 2012.11.20
Revised Date : 2013.05.24
Page No. : 10/ 10
TO-220FP Dimension
Marking:
Device Name
EE2
N20
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTEE2N20FP
CYStek Product Specification