MTN7002ZHN3

CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2015.06.16
Page No. : 1/7
N-Channel Logic Level Enhancement Mode MOSFET
MTN7002ZHN3
Description
The MTN7002ZHN3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTN7002ZHN3
D
SOT-23
D
G
S
G
G：Gate
S：Source
D：Drain
S
Ordering Information
Device
MTN7002ZHN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2015.06.16
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
PD
Continuous
Pulsed
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
TCH
Tstg
Limits
60
±20
300
800
300
800
350
1550
+150
-55~+150
*1
*1
*2
*3
Unit
V
V
mA
mA
mA
mA
mW
V
C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient
Symbol
RθJA
Value
357
*2
Unit
C/W
Note : *1. Pulse Width  300μs, Duty cycle 2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
BVDSS*
60
VGS(th)
1
1.5
2.5
IGSS
±10
IDSS
1
1.2
2
1.4
3
RDS(ON)*
1.2
1.9
1.4
2.2
GFS
100
240
Ciss
30.6
Coss
5.5
Crss
4
td(ON)
3.6
tr
15.2
td(OFF)
9.4
tf
18
Qg
1.1
Qgs
0.1
Qgd
0.23
-
Unit
mS
Test Conditions
VGS=0V, ID=100μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=60V, VGS=0V
ID=500mA, VGS=10V
ID=200mA, VGS=4.5V
ID=100mA, VGS=10V
ID=100mA, VGS=4.5V
VDS=10V, ID=100mA
pF
VDS=10V, VGS=0V, f=1MHz
ns
VDS=30V, ID=200mA, VGS=10V,
RG=6Ω
nC
VDS=30V, ID=200mA, VGS=10V
V
μA

*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2015.06.16
Page No. : 3/7
Typical Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
1.6
1.6
1.2
1.0
4.5V
0.8
0.6
4V
0.4
3.5V
0.2
VGS=2V
8
0.0
0
2
4
6
1.2
1.0
0.8
0.6
0.4
0.2
3V
2.5V
VDS=10V
1.4
10V
6V
5V
ID, Drain Current(A)
ID, Drain Current(A)
1.4
0.0
0
10
2
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(Ω)
10
Reverse Drain Current vs Source-Drain Voltage
100
VGS=2.5V
10
VGS=4.5V
VGS=10V
1
Tj=25°C
0.8
Tj=125°C
0.6
0.4
0.2
1
0.001
0.01
0.1
ID, Drain Current(A)
0
1
0.2
0.4
0.6
0.8
IDR, Reverse Drain Current(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
2
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(Ω)
4
6
8
VGS, Gate-Source Voltage(V)
ID=100mA
8
6
4
2
1.8
VGS=10V, ID=100mA
1.6
1.4
1.2
1
0.8
0.6
0.4
0
0
MTN7002ZHN3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2015.06.16
Page No. : 4/7
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
10
Coss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
1
0.1
1
10
VDS, Drain-Source Voltage(V)
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Power Derating Curve
400
PD, Power Dissipation(mW)
350
300
250
200
150
100
50
0
0
50
100
150
TA, Ambient Temperature(℃)
200
Recommended Soldering Footprint
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2015.06.16
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2015.06.16
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7002ZHN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320N3
Issued Date : 2007.11.06
Revised Date :2015.06.16
Page No. : 7/7
SOT-23 Dimension
Marking:
702
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Gate 2.Source 3.Drain
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
 Lead : Pure tin plated.
 Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7002ZHN3
CYStek Product Specification