MEP4435Q8

CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 1/9
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MEP4435Q8
BVDSS
-30V
ID
RDSON(MAX)@VGS=-10V, ID=-10A
-13A
9.3mΩ(typ.)
RDSON(MAX)@VGS=-5V, ID=-7A
14mΩ(typ.)
RDSON(MAX)@VGS=-4.5V, ID=-5A
15mΩ(typ.)
Description
The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
MEP4435Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MEP4435Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=100°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-13A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation
TA=100℃
Operating Junction and Storage Temperature Range
Symbol
Limits
Unit
VDS
VGS
-30
±25
-13
-8.2
-50 *1
-13
8.5
2.5 *2
2.5 *3
1
*3
-55~+150
V
V
A
A
A
A
mJ
mJ
W
W
°C
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
20
50 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
Min.
Typ.
Max.
Unit
-3
±100
-1
-10
12
20
21
-
V
V
nA
μA
μA
-
RDS(ON)
*1
-30
-1
-
GFS
Dynamic
Ciss
Coss
Crss
*1
-
-1.5
9.3
14
15
20
-
2994
323
258
MEP4435Q8
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±25V, VDS=0
VDS=-24V, VGS=0
VDS=-24V, VGS=0, Tj=125°C
VGS=-10V, ID=-13A
VGS=-5V, ID=-7A
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-10A
pF
VDS=-15V, VGS=0, f=1MHz
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Qg (VGS=10V) *1, 2
Qg (VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
14
10
44
15
35
18
12
13
4
Max.
-
-
40
28
-3
-12
-1.2
-
Unit
Test Conditions
ns
VDD=-15V, ID=-1A,
VGS=-10V, RG=2.7Ω
nC
VDS=-15V, ID=-10A,
VGS=-10V,
Ω
VGS=15mV, VDS=0, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MEP4435Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MEP4435Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
40
100
-BVDSS, Drain-Source Breakdown
Voltage(V)
-10V, -9V, -8V, -7V,-6V,-5V
-ID, Drain Current (A)
80
VGS=-4V
60
40
20
VGS=-3V
35
30
ID=-250μA,
VGS=0V
25
0
0
1
-60
5
2
3
4
-VDS, Drain-Source Voltage(V)
-20
Static Drain-Source On-State resistance vs Drain Current
1.2
VGS=0V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
180
Source Drain Current vs Source-Drain Voltage
1000
VGS=-2.5V
100
VGS=-4.5V
10
VGS=-10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
0.01
0.1
1
-ID, Drain Current(A)
0
10
8
12
16
-IS, Source Drain Current(A)
20
20
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
200
180
160
140
120
100
80
ID=-10A
60
40
20
16
VGS=-10V, ID=-10A
12
8
4
0
0
0
MEP4435Q8
4
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source OnState Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2
-VGS(th) , Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
1.8
1.6
ID=-1mA
1.4
1.2
ID=-250μA
1
Crss
0.8
100
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
Gate Charge Characteristics
VDS=-15V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
10
100
10
1
VDS=-5V
Pulsed
TA=25°C
0.1
8
VDS=-10V
VDS=-5V
6
4
2
ID=-10A
0
0.01
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
8
16
24
32
Qg, Total Gate Charge(nC)
40
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
16
100
-ID, Maximum Drain Current(A)
10μs
-ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
100μs
10
1ms
10ms
100ms
1
DC
0.1
TA=25°C, Tj=150°C, VGS=-10V
θJA=50°C/W, Single Pulse
14
12
10
8
6
4
TA=25°C, VGS=-10V
2
0
0.01
0.1
MEP4435Q8
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
TJ(MAX) =150°C
TA=25°C
θJA=50°C/W
Power (W)
40
30
20
10
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MEP4435Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MEP4435Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MEP4435Q8
CYStek Product Specification
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
Year Code : Last digit
of Christian year
Month Code : A, B, C,
D, E, F, G, H, J, K, L,
and M represent Jan
thru Dec
Production Lot Serial number:
Rolling from 01 each month
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1496
0.1575
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.70
5.10
3.80
4.00
5.80
6.20
1.27 *
0.33
0.51
3.74
3.88
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0531
0.0689
0.1889
0.2007
0.0019
0.0098
0.0157
0.0500
0.0067
0.0098
0.0531
0.0610
Millimeters
Min.
Max.
1.35
1.75
4.80
5.10
0.05
0.25
0.40
1.27
0.17
0.25
1.35
1.55
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MEP4435Q8
CYStek Product Specification