MTB1D7N03ATH8

CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB1D7N03ATH8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
BVDSS
ID @VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
30V
90A
1.5 mΩ(typ)
2.1 mΩ(typ)
Outline
DFN5×6
MTB1D7N03ATH8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTB1D7N03ATH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB1D7N03ATH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=77A, RG=25Ω
TC=25℃
TC=100℃
Total Power Dissipation
TA=25℃
TA=70℃
VDS
VGS
Operating Junction and Storage Temperature Range
Tj, Tstg
30
±20
90
57
20
16
360 *1
77
295
50
20
2.5
1.6
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
2.5
50 *3
ID
IDM
IAS
EAS
PD
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
MTB1D7N03ATH8
Min.
Typ.
Max.
Unit
30
1.0
-
1.9
58
1.5
2.1
2.5
±100
1
25
2.2
4.0
V
V
S
nA
-
5385
935
854
-
μA
mΩ
mΩ
pF
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±20V
VDS =24V, VGS =0V
VDS =24V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VGS =4.5V, ID=20A
VGS=0V, VDS=15V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
53
16
25
16
21
76
32
1.6
Max.
-
-
0.79
28
23
90
360
1.2
-
Unit
Test Conditions
nC
VDS=15V, VGS=4.5V, ID=15A
ns
VDS=15V, ID=1A, VGS=10V, RG=3.3Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IS=20A, VGS=0V
IF=20A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB1D7N03ATH8
CYStek Product Specification
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
360
ID, Drain Current(A)
240
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V, 6V, 5V, 4.5V
300
VGS=4V
180
120
VGS=3.5V
60
VGS=3V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS=3V
10
VGS=4.5V
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=125°C
0.4
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
100
0
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
100
90
ID=30A
80
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
70
60
50
40
30
20
10
2.8
2.4
VGS=10V, ID=30A
2
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 1.5mΩ typ.
0
0
0
MTB1D7N03ATH8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VGS(th), NormalizedThreshold Voltage
Capacitance---(pF)
10000
Ciss
C oss
1000
Crss
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=15A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
20
30
40
Total Gate Charge---Qg(nC)
50
60
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
120
100μ s
100
RDS(ON)
Limit
1ms
10ms
100ms
10
1s
TC=25°C, Tj=150°C,
VGS=10V, RθJC=2.5°C/W
Single Pulse
1
DC
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
80
60
40
20
VGS=10V, RθJC=2.5°C/W
0
0.1
0.01
MTB1D7N03ATH8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
360
3000
VDS=10V
2500
240
Power (W)
ID, Drain Current (A)
300
180
2000
1500
120
1000
60
500
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
TJ(MAX) =150°C
TC=25°C
θJC=2.5°C/W
0
0.000 0.001
1
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5 °C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
MTB1D7N03ATH8
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB1D7N03ATH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB1D7N03ATH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C948H8
Issued Date : 2014.06.06
Revised Date : 2015.03.26
Page No. : 9/9
DFN5×6 Dimension
Marking:
Device Name
B1D7
N03A
Date Code
8-L8-Lead
ead power
pakPlastic
PlasticPackage
Package
DFN5×6
CYCYS
StekPackage
Package
Code:
Code
: H8H8
Millimeters
Min.
Max.
0.80
1.00
0.00
0.05
0.35
0.49
0.254 REF
4.90
5.10
1.40 REF
DIM
A
A1
b
c
D
F
Inches
Min.
Max.
0.031
0.039
0.000
0.002
0.014
0.019
0.010 REF
0.193
0.201
0.055 REF
DIM
E
e
H
L1
G
K
Millimeters
Min.
Max.
5.70
5.90
1.27 BSC
5.95
6.20
0.10
0.18
0.60 REF
4.00 REF
Inches
Min.
Max.
0.224
0.232
0.050 BSC
0.234
0.244
0.004
0.007
0.024 REF
0.157 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB1D7N03ATH8
CYStek Product Specification