MTN2306AN3

Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 1/ 8
CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN2306AN3
BVDSS
30V
ID
VGS=10V, ID=5A
5.5A
25mΩ
VGS=4.5V, ID=5A
27mΩ
VGS=2.5V, ID=2.6A
30mΩ
RDSON(TYP)
Features
• Low on-resistance
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free package
Equivalent Circuit
Outline
MTN2306AN3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
30
±12
5.5
4.4
30
1.38
0.01
90
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
MTN2306AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 2/ 8
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
BVDSS/ΔTj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
Min.
Typ.
Max.
Unit
30
0.5
-
0.1
0.8
11
25
27
30
1.2
±100
1
25
30
35
50
V
V/°C
V
S
nA
μA
μA
-
1021
44
41
6
20
20
3
9.7
2.7
4.1
1050
-
-
14
7
1.2
-
mΩ
Test Conditions
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VDS=5V, ID=5A
VGS=±12V, VDS=0
VDS=25V, VGS=0
VDS=20V, VGS=0, Tj=70°C
VGS=10V, ID=5A
VGS=4.5V, ID=5A
VGS=2.5V, ID=2.6A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=15V, ID=5A, VGS=10V,
RG=3.3Ω, RD=3Ω
nC
VDS=15V, ID=5A, VGS=4.5V
V
ns
nC
VGS=0V, IS=1.2A
IS=5A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN2306AN3
MTN2306AN3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
2306A
CYStek Product Specification
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 3/ 8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
46
30
44
Drain-Source Breakdown Voltage
BVDSS(V)
ID, Drain Current(A)
3V,4V,5V,6V,7V,8V,9V,10V
20
VGS=2V
10
42
40
38
36
34
ID=250μA,
VGS=0V
32
30
0
0
1
2
3
4
5
6
7
8
9
-75
10
0
25
50
75
100 125
150 175
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=1.8V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
-25
Tj, Junction Temperature(°C)
1000
VGS=2V VGS=2.5V
100
VGS=4.5V
VGS=10V
0.1
1
10
ID, Drain Current(A)
0.01
VGS=0V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
10
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
60
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-50
VDS, Drain-Source Voltage(V)
180
ID=5A
160
140
120
100
80
60
40
20
55
VGS=4.5V, ID=5A
50
45
VGS=2.5V, ID=2.6A
40
35
30
25
20
VGS=10V, ID=5A
15
10
0
0
MTN2306AN3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 4/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.2
VGS(th), Threshold Voltage-(V)
Capacitance---(pF)
10000
Ciss
1000
Crss
C oss
100
1
ID=1mA
0.8
0.6
ID=250μA
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60 80 100 120 140 160
Gate Charge Characteristics
100
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
VDS=15V
ID=5A
8
6
4
2
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
10
12
14
16
18
20
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
7
ID, Maximum Drain Current(A)
ID, Drain Current(A)
20 40
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10μs
100μs
10
1ms
1
10ms
100ms
0.1
0
TA=25°C, Tj=150°C,VGS=10V
Single Pulse
0.01
0.01
DC
5
4
3
2
1
TA=25°C, VGS=10V
0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTN2306AN3
6
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 5/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
1.6
80
VDS=5V
1.4
PD, Power Dissipation(W)
ID, Drain Current(A)
70
60
50
40
30
20
Mounted on FR-4 board
with 1 in² pad area
1.2
1
0.8
0.6
0.4
0.2
10
0
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
50
100
150
200
TA, Ambient Temperature(℃)
Transient Thermal Response Curves
Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=27 0°C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTN2306AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 6/ 8
Reel Dimension
Carrier Tape Dimension
MTN2306AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 7/ 8
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
Recommended wave soldering condition
Product
Pb-free devices
MTN2306AN3
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C429N3
Issued Date : 2008.08.14
Revised Date :2012.03.29
Page No. : 8/ 8
SOT-23 Dimension
Marking:
A
L
3
B
TE
2306A
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1161
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.95
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2306AN3
CYStek Product Specification