MTDP2004S6R

CYStech Electronics Corp.
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 1/ 8
Dual P-CHANNEL MOSFET
MTDP2004S6R
BVDSS
ID
RDSON@VGS=-4.5V, ID=-430mA
RDSON@VGS=2.5V, ID=-300mA
RDSON@VGS=-1.8V, ID=-150mA
Features
-20V
-500mA
0.64Ω(typ)
1.1Ω(typ)
1.7Ω (typ)
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(-1.8V)
• Pb-free package
Equivalent Circuit
Outline
MTDP2004S6R
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-4.5V
Continuous Drain Current @ TA=85°C, VGS=-4.5V
Pulsed Drain Current (Notes 1, 2)
TA=25℃
Maximum Power Dissipation
(Note 3)
(Note 3)
(Note 3)
TA=85℃
Operating Junction and Storage Temperature
ID
IDM
PD
Tj, Tstg
Limits
-20
±8
-500
-360
-1.5
300
160
-55~+150
Unit
V
mA
A
mW
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
MTDP2004S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 2/ 8
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Symbol
Limit
Unit
Rth,ja
417
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
Min.
Typ.
Max.
Unit
-20
-0.5
-
-0.8
0.64
1.1
1.7
0.6
-1.2
±5
1
10
0.9
1.4
2.3
-
V
V
-
59
21
15
5
6
42
14
1.2
0.38
0.23
-
-
-0.78
-1.2
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VDS=16V, VGS=0 (Tj=70°C)
VGS=-4.5V, ID=-430mA
VGS=-2.5V, ID=-300mA
VGS=-1.8V, ID=-150mA
VDS=-10V, ID=-200mA
pF
VDS=-10V, VGS=0, f=1MHz
ns
VDS=-6V, ID=-500mA, VGS=-4.5V,
RG=50Ω
nC
VDS=-5V, ID=-250mA, VGS=-4.5V
V
VGS=0V, IS=-115mA
μA
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTDP2004S6R
MTDP2004S6R
Package
SOT-363
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
2004
CYStek Product Specification
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 3/ 8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-VGS=5V, 4.5V,4V
1.6
-VGS=3.5V
1.2
-VGS=3V
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current (A)
2
-VGS=2.5V
0.8
-VGS=2V
0.4
-VGS=1.8V
-VGS=1.5V
1
2
3
4
5
6
7
-VDS, Drain-Source Voltage(V)
8
9
1.2
1
0.8
0.6
0
0
ID=-250μA,
VGS=0V
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(Ω)
12
10
-VGS=1.2V
8
6
-VGS=2.5V
-VGS=1.5V
4
-VGS=1.8V
-VGS=4.5V
2
Tj=25°C
VGS=0V
1
0.8
0.6
Tj=150°C
0.4
0.2
0
0.001
0.01
0.1
-ID, Drain Current(A)
0
1
R DS(ON) , Normalized Static DrainSource On-State Resistance
3.6
3.2
2.8
2.4
2
ID=-500mA
ID=-300mA
ID=-10mA
1.2
0.8
1.5
2
4
1.6
0.3
0.6
0.9
1.2
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0.4
1.8
1.6
1.4
VGS=-4.5V, ID=-430mA
1.2
1
0.8
0.6
VGS=-2.5V, ID=-300mA
0.4
0
0
MTDP2004S6R
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 4/ 8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
C oss
Crss
10
ID=-250μA
1.4
1.2
1
0.8
0.6
0.4
1
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
20 40
60 80 100 120 140 160
Gate Charge Characteristics
5
20
-VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=417°C/W
15
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
1.6
10
5
VDS=-15V
4
VDS=-10V
3
VDS=-5V
2
1
ID=-250mA
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
0.4
0.6
0.8
1
1.2
Qg, Total Gate Charge(nC)
1.4
1.6
Maximum Drain Current vs JunctionTemperature
10
1
1ms
10ms
0.1
100ms
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=417C/W
Single Pulse
0.01
DC
0.001
-ID, Maximum Drain Current(A)
0.6
100μs
-ID, Drain Current (A)
0.2
0.5
0.4
0.3
0.2
0.1
TA=25°C, VGS=-4.5V, RθJA=417°C/W
0
0.01
MTDP2004S6R
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.4
1200
-VDS=5V
PD, Power Dissipation(W)
-ID, Drain Current (mA)
1000
TJ= -40°C, 0°C, 25°C
800
600
400
Single
0.3
Dual
0.2
0.1
150°C
200
Mounted on FR-4 board
with 1 in² pad area
0
0
0
0.5
1
1.5
2
2.5
-VGS, Gate-Source Voltage(V)
0
3
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Forward Transfer Admittance vs Drain Current
GFS, Forward Transfer Admittance(S)
10
VDS=-5V
1
VDS=-10V
0.1
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
-ID, Drain Current(A)
1
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=417 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTDP2004S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 6/ 8
Reel Dimension
Carrier Tape Dimension
MTDP2004S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDP2004S6R
CYStek Product Specification
Spec. No. : C698S6R
Issued Date : 2012.07.16
Revised Date :
Page No. : 8/ 8
CYStech Electronics Corp.
SOT-363 Dimension
Marking:
2004
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP2004S6R
CYStek Product Specification