MTP3LP01S3

Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 1/ 9
CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET
MTP3LP01S3
BVDSS
ID
-30V
-230mA
3Ω@-4V
4.6Ω@-2.5V
10.9Ω@-1.5V
RDSON(typ)
Features
• Ultra high speed switching.
• Low gate charge.
• 2.5V drive.
• Pb-free package.
Equivalent Circuit
Outline
MTP3LP01S3
SOT-323
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTP3LP01S3-0-T1-G
MTP3LP01S3
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation (Note 2)
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
-30
±10
-230
-920
200
625
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
Note : 1. Pulse width≤ 10μs, duty cycle≤1%.
2. When mounted on a glass epoxy with a dimension of 100mm²×1mm.
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Min.
Typ.
Max.
Unit
Test Conditions
-30
-0.6
100
-
0.9
210
3
4.6
10.9
-1.1
±1
-1
-10
5
8
18
V
V
mS
μA
VGS=0V, ID=-250μA
VDS=-10V, ID=-100μA
VDS=-10V, ID=-100mA
VGS=±8V, VDS=0
VDS=-30V, VGS=0
VDS=-24V, VGS=0; Tj=125°C
VGS=-4V, ID=-100mA
VGS=-2.5V, ID=-30mA
VGS=-1.5V, ID=-1mA
-
35.7
11.9
3.7
26.4
12.8
31.5
46.4
0.78
0.1
0.1
-
-
0.83
-230
-920
-1.2
μA
Ω
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-15V, ID=-100mA, VGS=-4V,
RL=150Ω, RG=50Ω
nC
VDS=-10V, ID=-100mA, VGS=-10V
mA
V
VGS=0V, IS=-100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP3LP01S3
CYStek Product Specification
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 3/ 9
CYStech Electronics Corp.
Typical Characteristics(The minus sign in voltage and current is omitted)
Typical Output Characteristics
Typical Transfer Characteristics
200
0.3
TA=25°C
6V
25°C
VDS=10V
3.5V
3V
Drain Current -I D(A)
Drain Current --- I D(A)
0.25
4V
0.2
2.5V
0.15
0.1
2V
150
75°C
100
125°C
50
0.05
VGS=1.5V
0
0
0
0.5
1
1.5
Drain-Source Voltage ---VDS(V)
0
2
0.5
1
1.5
2
2.5
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
10
ID=50mA
Static Drain-Source On-State
Resistance-RDS(ON) (Ω)
Static Drain-Source On-State
Resistance-RDS(ON) (Ω)
ID=30mA
8
TA=25°C
6
TA=75°C
4
2
8
TA=25°C
6
TA=75°C
4
2
TA=125°C
TA=125°C
0
0
0
2
4
6
8
Gate-Source Voltage-VGS(V)
10
0
2
4
6
8
Gate-Source Voltage-VGS(V)
10
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
100
Static Drain-Source On-State ResistanceRDS(on) (Ω)
100
Static Drain-Source On-State ResistanceRDS(on) (Ω)
3
VGS=1.5V
TA=125°C
TA=75°C
10
TA=25°C
1
VGS=2.5V
TA=125°C
10
TA=75°C
TA=25°C
1
0.1
MTP3LP01S3
1
Drain Current-I D(mA)
10
1
10
Drain Current-I D(mA)
100
CYStek Product Specification
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Static Drain-Source On-State resistance vs Ambient
Temperature
Static Drain-Source On-State resistance vs Drain Current
10
Static Drain-Source On-State ResistanceRDS(on)(Ω)
10
VGS=4V
8
Static Drain-Source On-State
Resistance-RDS(on) (Ω)
TA=125°C
TA=75°C
TA=25°C
ID=30mA, VGS=2.5V
6
4
ID=50mA, VGS=4V
2
0
1
1
10
100
Drain Current-ID(mA)
0
1000
Reverse Drain Current vs Source-Drain Voltage
Capacitance vs Drain-to-Source Voltage
VGS=0V
1
Ciss
TA=125°C
Capacitance---(pF)
Source-Drain Voltage-VSD(V)
150
100
1.2
0.8
0.6
TA=75°C
0.4
C oss
10
Crss
TA=25°C
0.2
f=1MHz
1
0
0.1
1
10
100
Reverse Drain Current -I DR (mA)
0
1000
Forward Transfer Admittance vs Drain Current
5
10
15
20
25
Drain-Source Voltage -VDS(V)
30
Brekdown Voltage vs Ambient Temperature
45
Drain-Source Breakdown Voltage
BVDSS(V)
1000
Forward Transfer Admittance---GFS(mS)
50
100
Ambient Temperature-TA(°C)
TA=25°C
TA=75°C
100
TA=125°C
10
10
MTP3LP01S3
100
Drain Current-I D(mA)
1000
40
35
ID=250μA,
VGS=0V
30
-100
-50
0
50
100
150
200
Ambient Temperature-Tj(°C)
CYStek Product Specification
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Static Drain-Source On-resistance vs Ambient Temperature
Gate Charge Characteristics
10
6
Gate-Source Voltage---VGS(V)
Static Drain-Source On-state
Resistance-RDS(on)(Ω)
9
5
4
3
2
ID=100mA,
VGS=4V
1
0
-100
VDS=10V,
ID=100mA
8
7
6
5
4
3
2
1
0
-50
0
50
100
Ambient Temperature-Ta(°C)
150
0
200
0.2
200
1
Drain Current --- ID(A)
250
150
100
0
MTP3LP01S3
0.5
0.6
0.7
0.8
PW<100μs
1ms
10ms
0.1
100ms
DC
0.01
Single pulse
Tc=25°C; Tj=150°C
implemented on a
glass epoxy
0.001
50
50
100
150
Ambient Temperature---TA(℃)
0.4
Maximum Safe Operating Area
10
0
0.3
Total Gate Charge---Qg(nC)
Power Derating Curves
Power Dissipation---PD(mW)
0.1
200
0.0001
0.001
0.01
0.1
1
10
100
Drain-Source Voltage -VDS(V)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 6/ 9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJA(t), Normalized Transient Thermal Resistance
10
1
0.1
ZθJA(t)=625°C/W max.
Implemented on a glass
epoxy
0.01
0.001
1.E-05
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTP3LP01S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTP3LP01S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 8/ 9
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
Recommended wave soldering condition
Product
Pb-free devices
MTP3LP01S3
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 9/ 9
SOT-323 Dimension
Device Code
TE
AB
XX
Marking:
Date Code
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP3LP01S3
CYStek Product Specification