MTN8N65E3

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN8N65E3
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 1/9
BVDSS : 650V
RDS(ON) : 1.2Ω(typ.)
ID : 7.5A
Description
The MTN8N65E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
Outline
MTN8N65E3
G：Gate
D：Drain
S：Source
MTN8N65E3
TO-220
G D S
CYStek Product Specification
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
650
±30
7.5*
4.5*
30*
213
7.5
16.5
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
PD
165
1.32
-55~+150
W
W/°C
°C
Tj, Tstg
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=7.5A, VDD=50V, L=7mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN8N65E3
Symbol
Rth,j-c
Rth,j-a
Value
0.76
62.5
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
650
2.0
-
0.7
5
1.2
4.0
±100
1
10
1.35
V
V/°C
V
S
nA
Ω
VGS=0, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =40V, ID=3.75A
VGS=±30
VDS =650V, VGS =0
VDS =520V, VGS =0, Tj=125°C
VGS =10V, ID=3.75A
32
7.2
14
40
70
96
75
1726
180
49
-
nC
ID=7.5A, VDD=520V, VGS=10V
ns
VDD=325V, ID=7.5A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
420
3.5
1.4
7.5
30
-
V
IS=7.5A, VGS=0V
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
μA
A
ns
μC
VGS=0, IF=7.5A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN8N65E3
MTN8N65E3
Package
TO-220
(RoHS compliant)
Shipping
Marking
50 pcs/tube, 20 tubes/box, 4 boxes / carton
8N65
CYStek Product Specification
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
3
15V
10V
9V
7V
6V
15
Static Drain-Source On-state
Resistance-RDS(on) (Ω)
Drain Current - I D(A)
20
5.5V
5V
10
VGS=4.5V
5
2.5
2
1.5
1
ID=3.75A,
VGS=10V
0.5
0
0
10
20
30
40
50
Drain-Source Voltage -VDS(V)
0
-100
60
-50
0
50
100
Ambient Temperature-Ta(°C)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
20
1.5
VDS=40V
VGS=10V
Drain Current-I D(on)(A)
Static Drain-Source On-State
Resistance-R DS(on)(Ω)
Ta=25°C
1
15
10
5
0
0.5
0.1
1
Drain Current-I D(A)
0
10
100
3
Reverse Drain Current-I DR (A)
Ta=25°C
ID=3.75A
2.5
2
1.5
1
0.5
5
10
Gate-Source Voltage-VGS(V)
15
Body Diode Forward Voltage Variation vs Source
Current and Temperature
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Static Drain-Source On-State
Resistance-R DS(ON)(Ω)
150
VGS=0V
10
Ta=150°C
1
Ta=25°C
0.1
0
2
MTN8N65E3
4
6
8
10
Gate-Source Voltage-VGS (V)
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
10000
800
Drain-Source Breakdown Voltage
BVDSS(V)
f=1MHz
Capacitance-(pF)
Ciss
1000
Coss
100
Crss
10
0
5
10
15
20
25
Drain-to-Source Voltage-VDS (V)
750
700
ID=250μA,
VGS=0V
650
-100
30
-50
50
100
150
200
Gate Charge Characteristics
Maximum Safe Operating Area
12
100
10μs
Gate-Source Voltage---VGS(V)
100μs
10
Drain Current --- ID(A)
0
Ambient Temperature-Tj(°C)
1ms
10ms
100ms
1
DC
Operation in this area is
limited by RDS(ON)
0.1
Single pulse
Tc=25°C; Tj=150°C
VDS=325V
8
VDS=520V
6
4
ID=7.5A
2
0
0.01
1
VDS=130
10
10
100
Drain-Source Voltage -VDS(V)
1000
0
5
10
15
20
25
30
35
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
9
7
6
5
(A)
Maximum Drain Current---I D
8
4
3
2
1
0
25
50
75
100
125
150
175
Case Temperature---TC (°C)
MTN8N65E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
D=0.5
ZθJC(t), Thermal Response
0.2
0.1
1.ZθJC(t)=0.76°C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN8N65E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 7/9
Test Circuits and Waveforms
MTN8N65E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 8/9
Test Circuits and Waveforms(Cont.)
MTN8N65E3
CYStek Product Specification
Spec. No. : C727E3
Issued Date : 2010.08.09
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TO-220 Dimension
A
Marking:
B
D
E
C
K
M
I
1
3
G
CYS
8N65
Device Name
H
□□□□
2 3
Date Code
N
2
1
4
O
P
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Inches
Min.
Max.
0.2441 0.2598
0.3386 0.3543
0.1732 0.1890
0.0492 0.0571
0.0142 0.0197
0.3858 0.4094
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
6.20
6.60
8.60
9.00
4.40
4.80
1.25
1.45
0.36
0.50
9.80
10.40
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0299 0.0394
0.0461 0.0579
*0.1000
0.5217 0.5610
0.5787 0.6024
Millimeters
Min.
Max.
*3.83
0.76
1.00
1.17
1.47
*2.54
13.25
14.25
14.70
15.30
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN8N65E3
CYStek Product Specification