MTN3N60FP

Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 1/ 9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN3N60FP
BVDSS : 600V
RDS(ON) : 3.6Ω (typ.)
ID : 3A
Description
The MTN3N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Adapter
• Switching Mode Power Supply
Ordering Information
Device
MTN3N60FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN3N60FP
CYStek Product Specification
CYStech Electronics Corp.
Symbol
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 2/ 9
Outline
MTN3N60FP
TO-220FP
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
600
±30
3*
1.8*
12*
24.5
3
3.3
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
PD
33
0.26
-55~+150
W
W/°C
°C
Tj, Tstg
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=3A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤3A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
MTN3N60FP
CYStek Product Specification
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 3/ 9
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3.84
62.5
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
600
2.0
-
0.65
1.8
3.6
4.0
±100
1
10
4.5
V
V/°C
V
S
nA
Ω
VGS=0, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=1.5A
VGS=±30
VDS =600V, VGS =0
VDS =480V, VGS =0, Tj=125°C
VGS =10V, ID=1.5A
11
2
5
10
27
24
30
435
45
8
-
nC
ID=3A, VDS=480V, VGS=10V
ns
VDS=300V, ID=3A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
250
1.6
3
12
1.5
-
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
A
V
ns
μC
IS=3A, VGS=0V
VGS=0, IF=3A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN3N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 4/ 9
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
10
15V
10V
9V
7V
4
6V
Static Drain-Source On-state
Resistance-RDS(on) (Ω)
Drain Current - I D(A)
5
3
5.5V
2
5V
1
8
6
4
ID=1.5A,
VGS=10V
VGS=4.5V
0
0
20
40
Drain-Source Voltage -VDS(V)
2
-100
60
-50
0
50
100
Ambient Temperature-Ta(°C)
150
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
Ta=25°C
VDS=10V
3.5
VGS=10V
Drain Current-I D(on)(A)
Static Drain-Source On-State
Resistance-R DS(on)(Ω)
4
6
3
2.5
2
1.5
1
0.5
0
1
0.1
1
Drain Current-ID(A)
0
10
5
10
15
Gate-Source Voltage-VGS(V)
20
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
VGS=0V
16
Forward Current-I F(A)
Static Drain-Source On-State
Resistance-R DS(ON)(Ω)
Ta=25°C
11
6
ID=1.5A
10
Ta=150°C
1
Ta=25°C
0.1
1
0
MTN3N60FP
2
4
6
8
10
Gate-Source Voltage-VGS(V)
12
0
0.5
1
1.5
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
1000
850
100
Drain-Source Breakdown Voltage
BVDSS(V)
Capacitance-(pF)
Ciss
Coss
10
Crss
800
750
700
650
ID=250μA,
VGS=0V
f=1MHz
1
0
5
10
15
20
25
Drain-to-Source Voltage-VDS (V)
600
-100
30
-50
50
100
150
200
Ambient Temperature-Tj(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
12
100
Operation in this area is
limited by RDS(ON)
VDS=120V
10μs
Gate-Source Voltage---VGS(V)
Drain Current --- ID(A)
0
10
100μs
1m
1
10m
100ms
Single Pulse
TC=25°C
TJ=150°C
0.1
DC
10
VDS=300V
8
VDS=480V
6
4
2
ID=3A
0
0.01
1
10
100
Drain-Source Voltage -VDS(V)
1000
0
2
4
6
8
10
12
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Drain Current---I D(A)
3.5
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
175
Case Temperature---TC (°C)
MTN3N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 6/ 9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
D=0.5
1
0.2
1.ZθJC(t)=3.84 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN3N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 7/ 9
Test Circuit and Waveforms
MTN3N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 8/ 9
Test Circuit and Waveforms(Cont.)
MTN3N60FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C798FP
Issued Date : 2010.03.12
Revised Date : 2014.12.09
Page No. : 9/ 9
TO-220FP Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3N60FP
CYStek Product Specification