MTN9N50FP

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN9N50FP
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 1/ 9
BVDSS : 500V
RDS(ON) : 0.78Ω typ.
ID : 8.5A
Description
The MTN9N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Ballast
• Inverter
Ordering Information
Device
MTN9N50FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN9N50FP
CYStek Product Specification
CYStech Electronics Corp.
Symbol
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 2/ 9
Outline
TO-220FP
MTN9N50FP
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy (Note 3)
Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt (Note 4)
Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor above 25℃
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
500
±30
8.5*
5.1*
34*
290
8
12.5
3.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
38.5
0.3
-55~+150
W
W/°C
°C
PD
Tj, Tstg
*Drain current limited by maximum junction temperature
Note : 1. TJ=+25℃ to +150℃.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=8A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃.
4. IAS=8A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃.
MTN9N50FP
CYStek Product Specification
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 3/ 9
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3.25
62.5
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
Min.
Typ.
Max.
Unit
Test Conditions
500
2.0
-
0.6
5
0.78
4.0
±100
1
25
0.85
V
V/°C
V
S
nA
Ω
VGS=0, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=4A
VGS=±30
VDS =500V, VGS =0
VDS =400V, VGS =0, Tj=125°C
VGS =10V, ID=4A
30
5
16
14
23
49
20
1411
117
26
-
nC
ID=8A, VDD=250V, VGS=10V
ns
VDD=250V, ID=8A, VGS=10V,
RG=10Ω
pF
VGS=0V, VDS=25V, f=1MHz
460
4.2
1.5
8
32
-
V
IS=8A, VGS=0V
A
VD=VG=0, VS=1.3V
ns
μC
VGS=0, IF=8A, dI/dt=100A/μs
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
μA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN9N50FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 4/ 9
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
2
20
15V
10V
9V
Static Drain-Source On-state
Resistance-RDS(on)(Ω)
Drain Current - ID(A)
16
1.8
7V
12
6V
8
5.5V
4
1.6
1.4
1.2
1
0.8
0.6
0.2
0
-100
0
0
10
20
30
40
Drain-Source Voltage -VDS(V)
50
ID=4A,
VGS=10V
0.4
5V
VGS=4.5V
60
-50
200
20
1.5
VDS=30V
Ta=25°C
VGS=10V
Drain Current-ID(on)(A)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
150
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
1
0.5
16
12
VDS=10V
8
4
0
0
0.1
1
10
Drain Current-ID(A)
0
100
5
10
15
Gate-Source Voltage-VGS(V)
20
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Ta=25°C
VGS=0V
Forward Current-IF(A)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
0
50
100
Ambient Temperature-Ta(°C)
ID=4A
10
Ta=150°C
Ta=25°C
1
0.1
0
MTN9N50FP
2
4
6
8
10
Gate-Source Voltage-VGS(V)
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
10000
Drain-Source Breakdown Voltage
BVDSS(V)
650
Capacitance-(pF)
Ciss
1000
Coss
100
Crss
600
550
500
ID=250μA,
VGS=0V
f=1MHz
10
0
5
10
15
20
25
Drain-to-Source Voltage-VDS(V)
450
-100
30
-50
0
50
100
150
200
Ambient Temperature-Tj(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
12
100
10μs
10
100μs
1ms
1
10ms
Operation in this area is
limited by RDS(ON)
0.1
100ms
DC
Tc=25°C, Tj=150°C
Single pulse
Gate-Source Voltage---VGS(V)
Drain Current --- ID(A)
VDS=90V
10
VDS=250V
8
VDS=360V
6
4
2
ID=8A
0
0.01
1
10
100
Drain-Source Voltage -VDS(V)
1000
0
6
12
18
24
30
36
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
10
Maximum Drain Current---ID(A)
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
175
Case Temperature---TC(°C)
MTN9N50FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 6/ 9
Characteristic Curves(Cont.)
Transient Thermal Response Curves
10
D=0.5
ZθJC(t), Thermal Response
1
0.2
0.1
0.05
0.1
1.ZθJC(t)=3.25 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN9N50FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 7/ 9
Test Circuit and Waveforms
MTN9N50FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 8/ 9
Test Circuit and Waveforms(Cont.)
MTN9N50FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C720FP
Issued Date : 2009.10.01
Revised Date : 2014.11.06
Page No. : 9/ 9
TO-220FP Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN9N50FP
CYStek Product Specification