MTN7N60BFP BVDSS

Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 1/10
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN7N60BFP
BVDSS
ID @ VGS=10V, TC=25°C
600V
RDSON(TYP) @ VGS=10V, ID=3.5A
7A
1Ω
Description
The MTN7N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Switching Mode Power Supply
• LCD Panel Power
• Adapter
• E-bike Charger
Ordering Information
Device
MTN7N60BFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN7N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Symbol
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 2/10
Outline
TO-220FP
MTN7N60BFP
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
IDM
IAS
EAS
EAR
dv/dt
600
±30
7*
4.4*
28*
7
187
4.4
4.5
TL
300
TPKG
260
Pd
44
0.35
-55~+150
ID
Tj, Tstg
Unit
V
A
mJ
V/ns
°C
W
W/°C
°C
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25℃.
3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25℃.
MTN7N60BFP
CYStek Product Specification
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 3/10
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.84
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
Min.
Typ.
Max.
Unit
Test Conditions
600
2.0
-
0.6
8
1.0
4.0
±100
1
10
1.2
V
V/°C
V
S
nA
Ω
VGS=0V, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=3.5A
VGS=±30V
VDS =600V, VGS =0V
VDS =480V, VGS =0V, Tj=125°C
VGS =10V, ID=3.5A
26.1
5.1
10.5
26
7.6
28
10.4
950
94
35
-
nC
ID=6A, VDD=300V, VGS=10V
ns
VDD=300V, ID=6A, VGS=10V,
RG=10Ω
pF
VGS=0V, VDS=25V, f=1MHz
490
2.2
1.5
7
28
-
V
IS=7A, VGS=0V
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
μA
A
ns
μC
VGS=0V, IF=6A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN7N60BFP
CYStek Product Specification
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 4/10
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
3.0
18
RDS(ON), Normalized Static Drain-Source
On-state Resistance
20
10V,9V,8V,7V
ID, Drain Current(A)
16
14
6V
12
10
8
5.5 V
6
4
VGS=4.5V
5V
2
0
2.5
2.0
1.5
1.0
ID=3.5A,
VGS=10V
0.5
0.0
0
10
20
30
VDS, Drain-Source Voltage(V)
40
-75
50
-50
20
2.0
1.8
VGS=10V
1.6
VDS=30V
Ta=25°C
ID, Drain Current(A)
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
1.4
1.2
1.0
0.8
0.6
15
VDS=10V
10
5
0.4
0.2
0
0.0
0.01
0.1
1
ID, Drain Current(A)
0
10
100
8
10
IF, Forward Current(A)
10
6
4
4
6
8
VGS, Gate-Source Voltage(V)
10
VGS=0V
1
Ta=150°C
Ta=25°C
0.1
0.01
ID=3.5A
2
2
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
RDS(ON), Static Drain-Source On-State
Resistance(Ω)
-25
Ta=25°C
0.001
0
0
2
4
6
VGS, Gate-Source Voltage(V)
MTN7N60BFP
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, Source Drain Voltage(V)
CYStek Product Specification
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 5/10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
10000
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.4
Capacitance(pF)
Ciss
1000
Coss
100
f=1MHz
1.2
1.0
0.8
ID=250μA,
VGS=0V
Crss
10
0.6
0
5
10
15
20
25
VDS, Drain-to-Source Voltage(V)
30
-75
-50
-25
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
RDS(ON)
Limited
10
VDS=120V
VGS, Gate-Source Voltage(V)
ID, Drain Current(A)
10 μs
100μs
1ms
10ms
1
100ms
DC
TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=2.84°C/W
Single pulse
0.1
VDS=300V
6
VDS=480V
4
2
ID=6A
0
0.01
1
10
100
0
1000
10
15
20
25
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
VGS(th), Normalized Threshold Voltage
7
6
5
4
3
2
VGS=10V, RθJC=2.84°C/W
1
5
VDS, Drain-Source Voltage(V)
8
ID, Maximum Drain Current(A)
8
30
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
0
25
50
75
100
125
TC, Case Temperature(°C)
MTN7N60BFP
150
175
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 6/10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
GFS , Forward Transfer Admittance(S)
10
2000
1800
TJ(MAX) =150°C
TC=25°C
RθJC=2.84°C/W
1600
1400
Power (W)
1
0.1
VDS=15V
0.01
0.1
1
ID, Drain Current(A)
1000
800
600
Ta=25°C
Pulsed
0.01
0.001
1200
400
200
10
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=2.84 °C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
MTN7N60BFP
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 7/10
Test Circuit and Waveforms
MTN7N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 8/10
Test Circuit and Waveforms(Cont.)
MTN7N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 9/10
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7N60BFP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C127FP
Issued Date : 2015.05.12
Revised Date :
Page No. : 10/10
TO-220FP Dimension
Marking:
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Inches
Min.
Max.
0.171
0.183
0.051 REF
0.112
0.124
0.102
0.110
0.020
0.030
0.031
0.041
0.047 REF
0.020
0.030
0.396
0.404
0.583
0.598
0.100 *
0.106 REF
DIM
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
Millimeters
Min.
Max.
4.35
4.65
1.300 REF
2.85
3.15
2.60
2.80
0.50
0.75
0.80
1.05
1.20 REF
0.500
0.750
10.06
10.26
14.80
15.20
2.54*
2.70 REF
DIM
G
H
H1
H2
J
K
L
L1
L2
M
N
Inches
Min.
Max.
0.246
0.258
0.138 REF
0.055 REF
0.256
0.272
0.031 REF
0.020
1.102
1.118
0.043
0.051
0.036
0.043
0.067 REF
0.012 REF
Millimeters
Min.
Max.
6.25
6.55
3.50 REF
1.40 REF
6.50
6.90
0.80 REF
0.50 REF
28.00
28.40
1.10
1.30
0.92
1.08
1.70 REF
0.30 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7N60BFP
CYStek Product Specification