AP4435GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
BVDSS
-30V
RDS(ON)
20mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
-40A
G
S
Description
AP4435 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP4435GJ) are available for low-profile
applications.
G
D
S
G
TO-251(J)
D
S
TO-252(H)
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
-40
A
ID@TC=100℃
Drain Current, VGS @ 10V
-25
A
-150
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
44.6
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Units
2.8
℃/W
62.5
℃/W
110
℃/W
1
201411065AP
AP4435GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-26A
-
-
20
mΩ
VGS=-4.5V, ID=-16A
-
-
36
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-26A
-
31
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-30
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-26A
-
16.5
32
nC
Qgs
Gate-Source Charge
VDS=-25V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
11
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
7.5
-
ns
tr
Rise Time
ID=-26A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
24
-
ns
tf
Fall Time
VGS=-10V
-
92
-
ns
Ciss
Input Capacitance
VGS=0V
-
1160 1970
pF
Coss
Output Capacitance
VDS=-25V
-
195
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
175
-
pF
Min.
Typ.
IS=-26A, VGS=0V
-
-
-1.3
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4435GH/J-HF
80
100
o
T C = 25 C
-ID , Drain Current (A)
80
-ID , Drain Current (A)
o
T C = 150 C
-10V
-7.0V
-6.0V
-5.0V
V G = - 4 .0 V
60
40
-10V
-7.0V
-6.0V
-5.0V
60
V G = - 4 .0 V
40
20
20
0
0
0
1
2
3
4
5
0
6
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
1.8
I D = - 16 A
T C =25 ℃
I D = - 26 A
V G =-10V
22
.
Normalized RDS(ON)
RDS(ON) (mΩ)
26
1.4
1.0
18
0.6
14
2
4
6
8
-50
10
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
26.0
2.0
19.5
1.5
Normalized VGS(th)
-IS(A)
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
13.0
T j =150 o C
0
o
-V GS , Gate-to-Source Voltage (V)
T j =25 o C
6.5
1.0
2.01E+08
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4435GH/J-HF
f=1.0MHz
2000
I D = -26 A
V DS = -25 V
8
1600
6
1200
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
10
4
800
2
400
C oss
C rss
0
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
-ID (A)
100
100us
.
10
1ms
10ms
100ms
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP4435GH/J-HF
MARKING INFORMATION
TO-251
4435GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
4435GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5