D10XB60H

TH97/10561QM
D10XB60H
TW00/17276EM
IATF 0060636
SGS TH07/1033
SILICON BRIDGE RECTIFIER
PRV : 600 Volts
Io : 10 Amperes
C3
0.150 (3.8)
0.134 (3.4)
0.189 (4.8)
0.173 (4.4)
0.996 (25.3)
0.972 (24.7)
+ ~ ~
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
0.114 (2.9)
0.098 (2.5)
0.303 (7.7)
0.287 (7.3)
0.032 (0.8)
0.043 (1.1)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
0.709 (18)
0.669 (17)
0.603(15.3)
0.579(14.7)
Glass passivated junction chip
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
0.130(3.7)
0.146(3.3)
*
*
*
*
*
*
*
*
*
0.383(9.7)
0.367(9.3)
FEATURES :
0.134(3.4)
0.122(3.1)
RBV4
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Peak Reverse Voltage
Maximum Average Forward Current
With heatsink, Tc = 112 °C
(50Hz Sine wave, R-load )
Without heatsink, Ta = 25 °C
Maximum Peak Forward Surge Current, Tj = 25 °C
SYMBOL
VALUE
UNIT
VRM
600
V
IO
10
2.9
A
IFSM
170
A
I2t
110
A2S
VF
1.05
V
IR
10
μA
Maximum Thermal Resistance, Junction to case, With heatsink
RӨJC
1.9
°C/W
Maximum Thermal Resistance, Junction to Ambient, Without heatsink
RӨJA
26
°C/W
Maximum Thermal Resistance, Junction to Lead, Without heatsink
RӨJL
6
°C/W
TJ
150
°C
TSTG
- 40 to + 150
°C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms ≤ t < 10 ms, TJ = 25 °C
Maximum Forward Voltage per Diode at I F = 5.0 A
( Pulse measurement, Rating of per diode)
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Operating Junction Temperature
Storage Temperature Range
Page 1 of 2
Rev. 00 : February 5, 2009
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( D10XB60H )
FIG.2 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
AVERAGE RECTIFIER FORWARD
CURRENT, (A)
10
8
6
4
2
Sine wave, R-load with heatsink
0
80
90
100
110
120
130
140
150
PEAK FORWARD SURGE CURRENT, (A)
FIG.1 - DERATING CURVE
200
150
100
50
0
1
CASE TEMPERATURE, ( °C)
10
100
NUMBER OF CYCLES (CYCLES)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - POWER DISSIPATION
PER DIODE
100
POWER DISSIPATION , (W)
FORWARD CURRENT, (A)
30
10
Tc = 150 °C
Tc = 25 °C
1.0
25
20
15
10
Sine wave
TJ = 150 °C
5
0
0
2
4
6
8
10
12
14
AVERAGE RECTIFIED CURRENT, (A)
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE, (V)
Page 2 of 2
Rev. 00 : February 5, 2009