Down

WFF840
on N-C
hann
el MOS
FET
Silic
Silico
N-Ch
nnel
MOSF
Features
■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 48nC)
■Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planarstripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
G
D
correction bridge and full bridge resonant topology line a and half
TO220F
S
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
500
V
Continuous Drain Current(@Tc=25℃)
8*
A
Continuous Drain Current(@Tc=100℃)
5.1*
A
32*
A
±30
V
Drain Source Voltage
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
320
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
13.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
3.5
V/ns
44
W
0.35
W/℃
-55~150
℃
300
℃
dv/dt
(Note1)
Total Power Dissipation(@Tc=25℃)
PD
TJ, Tstg
TL
Derating Factor above 25℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Units
Min
Typ
Max
2.84
℃/W
RQJC
Thermal Resistance, Junction-to-Case
-
-
RQCS
Thermal Resistance, Case to Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62
℃/W
Rev. C Nov.2008
[email protected] Microelectronics Co., Ltd., All right reserved.
T03-1
WFF840
Electrical Characte
Characterristics (Tc = 25
25°°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
V(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
IDSS
VDS = 400 V, VGS = 0 V
-
-
10
μA
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
500
-
-
V
Break Voltage Temperature
Coefficient
ΔBVDSS /
ID=250μA, Referenced to 25℃
-
0.5
-
V/℃
Gate−source breakdown voltage
Drain cut−off current
ΔTJ
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
-
4
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID =4.0A
-
0.65
0.80
Ω
Forward Transconductance
gfs
VDS = 40 V, ID =4.0A
-
7.3
-
S
Input capacitance
Ciss
VDS = 25 V,
-
1400
1800
Reverse transfer capacitance
Crss
VGS = 0 V,
-
34
44
Output capacitance
Coss
f = 1 MHz
-
145
190
tr
VDD =250 V,
-
22
55
ID =8 A
-
65
140
tf
RG=9.1 Ω
-
125
260
toff
RD=31 Ω
-
75
160
Qg
VDD = 400 V,
-
59
70
-
7
9
-
28
32
Rise time
Switching
Turn−on time
time
Fall time
ton
pF
ns
Turn−off time
(Note4,5)
Total gate charge (gate−source
plus gate−drain)
VGS = 10 V,
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
nC
ID =8 A
(Note4,5)
−Drain Ratings and Characte
Source
Source−
Characterristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Ty pe
Max
Unit
Continuous drain reverse current
IDR
-
-
-
8
A
Pulse drain reverse current
IDRP
-
-
-
32
A
Forward voltage (diode)
VDSF
IDR = 8 A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
IDR = 8A, VGS = 0 V,
-
390
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
4.2
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=9mH,IAS=8A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤8A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
.
Steady, keep you advance
WFF840
Fig. 1 On-State Characteristics
Fig.2 Transfer Characteristics
Fig.3 Capacitance Variation vs
Drain Voltage
Fig.4 Maximum Avalanche
Energy vs On-State Current
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.6 Gate Charge Characteristics
3/7
.
Steady, keep you advance
WFF840
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
.
Steady, keep you advance
WFF840
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
.
Steady, keep you advance
WFF840
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
.
Steady, keep you advance
WFF840
0F Package Dimension
TO-22
-220
Unit: mm
7/7
.
Steady, keep you advance