30-P2126PA075NB-L288F69Y datasheet flow PACK 2 1200 V / 75 A Features flow 2 17mm housing ● Mitsubishi generation 6.1 (1200V) technology for low saturation losses and improved EMC behavior ● Compact and low inductive design ● Integrated temperature sensor Schematic Target applications ● Industrial drives Types ● 30-P2126PA075NB-L288F69Y Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 1200 V 85 A 150 A 204 W Inverter Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T S =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S =80 °C 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Parameter Conditions Symbol Value Unit 1200 V 64 A 150 A 145 W 175 °C Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax T j = T jmax T j = T jmax T h = 80°C T h = 80°C Module Properties Copyright Vincotech 2 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Characteristic Values Inverter Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 5,4 6 6,6 25 1,82 2,15 125 2,11 150 2,18 Static Gate-emitter threshold voltage V GE(th) V GE=V CE Collec tor-emitter saturation voltage V CEsat 0,0015 15 75 25 125 V V Collec tor-emitter cut-off c urrent I CES 0 1200 25 0,43 µA Gate-emitter leakage current I GES 20 0 25 500 nA Internal gate resistance rg 13 Input capacitance C ies 15000 Output capacitance C oes Reverse transfer c apac itanc e C res Gate c harge 0 f=1 MHz 25 25 3000 Ω pF 250 15 Qg 600 35 25 tbd nC 0,61 K/W Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W /mK IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 4 Ω R gon = 4 Ω Turn-on energy (per pulse) t d(off) Turn-off energy (per pulse) Copyright Vincotech tf E on 51 125 52 25 5 125 ±15 Fall time 25 600 75 6 25 140 125 180 25 125 60 79 Q rFWD = 7,8 µC 25 Q rFWD = 0,5 µC 125 2,477 25 3,554 125 5,402 E off 3 ns 1,450 mWs 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,57 3,3 125 2,53 150 2,17 Static Forward voltage Reverse leakage current 75 VF 1200 Ir 25 V 45 µA Thermal Thermal resistanc e junction to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 0,65 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr 25 145 125 164 25 111 125 di /dt = 12759 A/µs di /dt = 5892 A/µs E rec (di rf/dt )max ±15 600 75 25 125 132 7,830 16,191 25 3,891 125 8,373 25 12143 125 5402 A ns µC mWs A/µs Thermistor Copyright Vincotech 4 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 250 I C (A) I C (A) 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs 25 °C tp = 250 V GE = 15 V 125 °C Tj = 150 150 °C V GE from 7 V to 17 V in steps of 1 V T j: Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 75 Z t h(j h(j--s)(K/W) I C (A) 100 60 45 10-1 30 0,5 0,2 0,1 0,05 15 0,02 0,01 0,005 0 10-2 10-4 0 0 2 4 6 8 10 12 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= V CE = 10 V 125 °C R th(j-s) = T j: Copyright Vincotech 150 °C 10-1 100 101 t p (s) 102 tp / T 0,61 K/W IGBT thermal model values R th (K/W) 5 5,07E-02 τ (s) 2,97E+00 1,85E-01 3,64E-01 2,90E-01 7,94E-02 5,72E-02 9,84E-03 2,77E-02 5,22E-04 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q G) V G E (V) 20 17,5 240V 15 960 12,5 10 7,5 5 2,5 0 0 100 200 300 400 500 600 700 800 900 Q G (nC) At 75 I C= A Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F ) Z th(j-s) = f(t p) 250 Z t h(j h(j--s) (K/W) IF (A) 100 200 150 10-1 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 50 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 0,65 K/W 150 °C FWD thermal model values Copyright Vincotech 6 R (K/W) 6,46E-02 τ (s) 2,51E+00 1,19E-01 2,57E-01 3,09E-01 5,16E-02 9,50E-02 1,50E-02 6,70E-02 1,68E-03 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Thermistor Characteristics Copyright Vincotech 7 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unct ion of collect or current Typical switching energy losses as a f unct ion of gat e resist or E = f(I C) E = f(rg) E (mWs) E (mWs) 12 Eoff 9 8 Eon 6 Eoff Eo n 6 4 E o ff Eo ff Eon 3 2 Eo n 0 0 0 20 40 60 80 100 120 140 160 0 I C (A) 25 °C With an inductive load at 600 V V CE = V GE = ±15 V R gon = 4 Ω R goff = 4 Ω 125 °C T j: 2 4 6 8 150 °C V GE = IC = Figure 3. FWD ±15 V 75 A 10 T j: 14 16 R g ( Ω) 125 °C Figure 4. FWD E rec = f(I c) E rec = f(r g ) 12 12 E (mWs) Typical reverse recovered energy loss as a f unct ion of gat e resist or Erec 18 150 °C Typical reverse recovered energy loss as a f unct ion of collect or current E (mWs) 12 25 °C With an inductive load at 600 V V CE = 9 9 Erec 6 6 Erec Erec 3 3 0 0 0 20 40 60 With an inductive load at 600 V V CE = V GE = ±15 V R gon = 4 Ω Copyright Vincotech 80 100 120 140 I C (A) 0 160 25 °C T j: 2 4 6 With an inductive load at 600 V V CE = 125 °C 150 °C V GE = IC= 8 ±15 V 75 A 8 10 12 14 16 r g (Ω) 18 25 °C T j: 125 °C 150 °C 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collect or current Typical switching t imes as a f unct ion of gat e resist or t = f(I C) t = f(r g) 1 t ( μ s) t ( μs) 1 td(off ) td(off ) 0,1 td(on) tf 0,1 tf td(on) tr tr 0,01 0,01 0,001 0,001 0 20 40 60 80 100 120 140 160 0 (A) I C (A) With an inductive load at 125 °C Tj= 2 4 6 8 10 12 16 r g (Ω) 18 With an inductive load at 125 °C Tj = V CE = 600 V V CE = 600 V V GE = ±15 V V GE = ±15 V R gon = 4 Ω IC = 75 A R goff = 4 Ω Figure 7. FWD Figure 8. FWD Typical reverse recovery t ime as a f unct ion of collect or current Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,16 trr t rr (μs) t rr (μs) 0,8 trr trr 0,12 0,6 trr 0,08 0,4 0,04 0,2 0 0 0 20 40 60 80 100 120 140 160 0 I C (A) At 14 600 V V GE = ±15 V R gon = 4 Ω V CE= Copyright Vincotech 4 6 8 10 12 14 16 18 R g o n (Ω) 25 °C T j: 2 At V CE = 125 °C V GE = 150 °C IC= 9 600 V ±15 V 75 A 25 °C T j: 125 °C 150 °C 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unction of IGBT turn on gat e resist or Q r = f(I C) Q r = f(R gon) 25 Q r (µC) Q r (μC) Typical recovered charge as a f unct ion of collect or current Qr 20 20 Qr 15 15 Qr 10 10 Qr 5 5 0 At 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 600 V ±15 V 75 A T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unction of collector current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor I RM = f(I C) I RM = f(R gon) 200 18 R g on (Ω) 25 °C I R M (A) I R M (A) 250 IR M IRM 200 150 150 100 100 I RM 50 50 IRM 0 0 0 At 20 40 60 600 V V GE = ±15 V R gon = 4 Ω V CE = Copyright Vincotech 80 100 120 140 I C (A) 0 160 4 6 8 10 12 14 16 18 R go n (Ω) 25 °C T j: 2 At V CE = 125 °C V GE = 150 °C IC= 10 600 V ±15 V 75 A 25 °C T j: 125 °C 150 °C 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 20000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 20000 di F / dt dir r/dt di F / dt di r r/ dt 15000 15000 10000 10000 5000 5000 0 0 0 20 40 60 80 100 120 140 0 160 5 10 I C (A) 600 V V GE = ±15 V R gon = 4 Ω V CE = At 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 600 V ±15 V 75 A 15 20 R g o n (Ω) IGBT Reverse bias saf e operat ing area I C = f(V CE) I C (A) 160 I C MAX I c CHIP 140 120 M ODULE 100 Ic 80 60 V CE MAX 40 20 0 0 200 400 600 800 1000 1200 1400 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 11 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switching Definitions General conditions = 125 °C = 4Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f ) 4Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon) 125 350 tdoff % % IC 300 100 VCE VCE 90% VGE 90% 250 75 200 VGE 50 150 tEoff VCE VGE 100 25 tdon IC IC 1% 50 0 VCE 3% IC 10% V 0 GE 10% tEon -25 -0,1 0 0,1 0,2 0,3 0,4 0,5 -50 2,95 0,6 3 3,05 3,1 3,15 t (µs) 3,2 t (µs) V GE (0%) = -15 V V GE (0%) = -15 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 600 V V C (100%) = 600 V I C (100%) = 76 A I C (100%) = 76 A t doff = 0,180 µs t don = 0,052 µs t Eoff = Figure 3. 0,553 µs t Eon = Figure 4. 0,170 µs IGBT Turn-of f Swit ching Wavef orms & def init ion of tf IGBT Turn-on Swit ching Wavef orms & def init ion of t r 125 350 fitted % VCE IC IC % 300 100 IC 90% 250 75 200 IC 60% 50 150 IC 40% VCE 100 25 IC 90% tr IC10% 0 50 tf IC 10% 0 -25 0 0,05 0,1 0,15 0,2 0,25 0,3 0,35 -50 0,4 3 t (µs) 3,02 3,04 3,06 600 V V C (100%) = 600 V I C (100%) = 76 A I C (100%) = 76 A tf= 0,079 µs tr = 0,006 µs Copyright Vincotech 3,08 3,1 3,12 t (µs) V C (100%) = 12 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of tEof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of t Eon 125 200 % IC 1% Poff 100 % Eoff Pon 150 Eon 75 100 50 50 25 VCE 3% VGE 10% VGE 90% 0 0 tEoff tEon -50 -25 -0,1 0 0,1 0,2 0,3 0,4 0,5 2,9 0,6 3 3,1 P off (100%) = 45,47 kW P on (100%) = 45,47 kW E off (100%) = 5,40 mJ E on (100%) = 2,48 mJ t Eoff = 0,55 µs t Eon = 0,17 µs Figure 7. 3,2 3,3 t (µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def inition of t rr 150 % Id 100 trr 50 fitted 0 IRRM 10% -50 Vd -100 -150 IRRM 90% IRRM 100% -200 -250 3 3,1 3,2 3,3 3,4 t (µs) V d (100%) = 600 V I d (100%) = 76 A I RRM (100%) = -164 A t rr = 0,132 µs Copyright Vincotech 13 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 150 % % Id Qrr 100 Erec 100 50 tQrr 0 tErec 50 -50 Prec 0 -100 -150 2,8 3 3,2 3,4 3,6 3,8 4 -50 4,2 2,9 t (µs) 3,1 3,3 3,5 3,7 4,1 4,3 t (µs) I d (100%) = 76 A P rec (100%) = 45,47 kW Q rr (100%) = 16,19 µC E rec (100%) = 8,37 mJ t Qrr = 1,00 µs t Erec = 1,00 µs Copyright Vincotech 3,9 14 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Ordering Code & Marking Version without thermal paste 17mm housing with thermal paste 17mm housing Ordering Code 30-P2126PA075NB-L288F69Y 30-P2126PA075NB-L288F69Y-/3/ NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L288F69Y L288F69Y-/3/ in packaging barcode as L288F69Y L288F69Y-/3/ Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y 1 0,9 0 S11 30 68,5 0 DC+3 2 0,9 3 G11 31 68,5 2,7 DC+3 3 3,9 0 DC-1 32 64,7 36 G16 4 3,9 2,7 DC-1 33 61,7 36 S16 5 3,9 5,4 DC-1 34 58,7 36 PH3 6 6,6 0 DC-1 35 56 36 PH3 7 15,2 0 DC+1 36 53,3 36 PH3 8 15,2 2,7 DC+1 37 50,6 36 PH3 9 17,9 0 DC+1 38 39,4 36 G14 10 17,9 2,7 DC+1 39 36,4 36 S14 11 26,2 0 S13 40 33,4 36 PH2 12 26,2 3 G13 41 30,7 36 PH2 13 29,2 0 DC-2 42 28 36 PH2 14 29,2 2,7 DC-2 43 25,3 36 PH2 15 29,2 5,4 DC-2 16 31,9 0 DC-2 44 45 14,1 11,1 36 36 G12 S12 Function 17 32,2 4,05 NTC 46 8,1 36 PH1 18 40,5 0 DC+2 47 5,4 36 PH1 19 40,5 2,7 20 43,2 0 DC+2 DC+2 48 49 2,7 0 36 36 PH1 Ph1 21 43,2 2,7 DC+2 22 51,5 0 S15 23 51,5 3 G15 24 54,5 0 DC-3 25 54,5 2,7 DC-3 26 54,5 5,4 DC-3 27 57,2 0 DC-3 28 65,8 0 DC+3 29 65,8 2,7 DC+3 Copyright Vincotech 15 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Pinout Identification ID Component Voltage Current Function Comment T11,T12,T13,T14,T15, T16 IGBT 1200V 75A Inverter Switch CH0075C-1200S002 D11,D12,D13,D14,D15, D16 FWD 1200V 75A Inverter Diode CH0075R-1200S002 NTC NTC - - Thermistor Copyright Vincotech 16 01 Jun. 2015 / Revision 1 30-P2126PA075NB-L288F69Y datasheet Packaging instruction Standard packaging quantity (SPQ) 42 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 2 packages see vincotech.com website. Document No.: Date: 30-P2126PA075NB-L288F69Y-D1-14 01 Jun. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 01 Jun. 2015 / Revision 1