30 P2126PA075NB L288F69Y D1 14

30-P2126PA075NB-L288F69Y
datasheet
flow PACK 2
1200 V / 75 A
Features
flow 2 17mm housing
● Mitsubishi generation 6.1 (1200V) technology for
low saturation losses and improved EMC behavior
● Compact and low inductive design
● Integrated temperature sensor
Schematic
Target applications
● Industrial drives
Types
● 30-P2126PA075NB-L288F69Y
Maximum Ratings
Tj=25°C, unless otherwise specified
TParameter
j=
Condition
Symbol
Value
Unit
1200
V
85
A
150
A
204
W
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
VGES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S =80 °C
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
1200
V
64
A
150
A
145
W
175
°C
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
T j = T jmax
T j = T jmax
T h = 80°C
T h = 80°C
Module Properties
Copyright Vincotech
2
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Characteristic Values
Inverter Switch
TParameter
j=
Symbol
Conditions
V GE [V] V CE [V]
Value
I C [A]
T j[ °C]
Unit
Min
Typ
Max
5,4
6
6,6
25
1,82
2,15
125
2,11
150
2,18
Static
Gate-emitter threshold voltage
V GE(th) V GE=V CE
Collec tor-emitter saturation voltage
V CEsat
0,0015
15
75
25
125
V
V
Collec tor-emitter cut-off c urrent
I CES
0
1200
25
0,43
µA
Gate-emitter leakage current
I GES
20
0
25
500
nA
Internal gate resistance
rg
13
Input capacitance
C ies
15000
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Gate c harge
0
f=1 MHz
25
25
3000
Ω
pF
250
15
Qg
600
35
25
tbd
nC
0,61
K/W
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
t d(on)
tr
R goff = 4 Ω
R gon = 4 Ω
Turn-on energy (per pulse)
t d(off)
Turn-off energy (per pulse)
Copyright Vincotech
tf
E on
51
125
52
25
5
125
±15
Fall time
25
600
75
6
25
140
125
180
25
125
60
79
Q rFWD = 7,8 µC
25
Q rFWD = 0,5 µC
125
2,477
25
3,554
125
5,402
E off
3
ns
1,450
mWs
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
2,57
3,3
125
2,53
150
2,17
Static
Forward voltage
Reverse leakage current
75
VF
1200
Ir
25
V
45
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,65
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
25
145
125
164
25
111
125
di /dt = 12759 A/µs
di /dt = 5892 A/µs
E rec
(di rf/dt )max
±15
600
75
25
125
132
7,830
16,191
25
3,891
125
8,373
25
12143
125
5402
A
ns
µC
mWs
A/µs
Thermistor
Copyright Vincotech
4
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
250
I C (A)
I C (A)
250
200
200
150
150
100
100
50
50
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
25 °C
tp =
250
V GE =
15
V
125 °C
Tj =
150
150 °C
V GE from
7 V to 17 V in steps of 1 V
T j:
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
75
Z t h(j
h(j--s)(K/W)
I C (A)
100
60
45
10-1
30
0,5
0,2
0,1
0,05
15
0,02
0,01
0,005
0
10-2
10-4
0
0
2
4
6
8
10
12
10-3
10-2
V G E (V)
tp =
100
µs
25 °C
D=
V CE =
10
V
125 °C
R th(j-s) =
T j:
Copyright Vincotech
150 °C
10-1
100
101
t p (s)
102
tp / T
0,61
K/W
IGBT thermal model values
R th (K/W)
5
5,07E-02
τ (s)
2,97E+00
1,85E-01
3,64E-01
2,90E-01
7,94E-02
5,72E-02
9,84E-03
2,77E-02
5,22E-04
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q G)
V G E (V)
20
17,5
240V
15
960
12,5
10
7,5
5
2,5
0
0
100
200
300
400
500
600
700
800
900
Q G (nC)
At
75
I C=
A
Inverter Diode Characteristics
FWD
Typical forward characteristics
FWD
Transient thermal impedance as a function of pulse width
I F = f(V F )
Z th(j-s) = f(t p)
250
Z t h(j
h(j--s) (K/W)
IF (A)
100
200
150
10-1
100
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
50
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,65
K/W
150 °C
FWD thermal model values
Copyright Vincotech
6
R (K/W)
6,46E-02
τ (s)
2,51E+00
1,19E-01
2,57E-01
3,09E-01
5,16E-02
9,50E-02
1,50E-02
6,70E-02
1,68E-03
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Thermistor Characteristics
Copyright Vincotech
7
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
E (mWs)
E (mWs)
12
Eoff
9
8
Eon
6
Eoff
Eo n
6
4
E o ff
Eo ff
Eon
3
2
Eo n
0
0
0
20
40
60
80
100
120
140
160
0
I C (A)
25 °C
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
4
Ω
R goff =
4
Ω
125 °C
T j:
2
4
6
8
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
75
A
10
T j:
14
16
R g ( Ω)
125 °C
Figure 4.
FWD
E rec = f(I c)
E rec = f(r g )
12
12
E (mWs)
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
18
150 °C
Typical reverse recovered energy loss as a f unct ion of collect or current
E (mWs)
12
25 °C
With an inductive load at
600
V
V CE =
9
9
Erec
6
6
Erec
Erec
3
3
0
0
0
20
40
60
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
4
Ω
Copyright Vincotech
80
100
120
140
I C (A)
0
160
25 °C
T j:
2
4
6
With an inductive load at
600
V
V CE =
125 °C
150 °C
V GE =
IC=
8
±15
V
75
A
8
10
12
14
16
r g (Ω)
18
25 °C
T j:
125 °C
150 °C
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
0,1
td(on)
tf
0,1
tf
td(on)
tr
tr
0,01
0,01
0,001
0,001
0
20
40
60
80
100
120
140
160
0
(A)
I C (A)
With an inductive load at
125
°C
Tj=
2
4
6
8
10
12
16
r g (Ω)
18
With an inductive load at
125
°C
Tj =
V CE =
600
V
V CE =
600
V
V GE =
±15
V
V GE =
±15
V
R gon =
4
Ω
IC =
75
A
R goff =
4
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,16
trr
t rr (μs)
t rr (μs)
0,8
trr
trr
0,12
0,6
trr
0,08
0,4
0,04
0,2
0
0
0
20
40
60
80
100
120
140
160
0
I C (A)
At
14
600
V
V GE =
±15
V
R gon =
4
Ω
V CE=
Copyright Vincotech
4
6
8
10
12
14
16
18
R g o n (Ω)
25 °C
T j:
2
At
V CE =
125 °C
V GE =
150 °C
IC=
9
600
V
±15
V
75
A
25 °C
T j:
125 °C
150 °C
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
25
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
Qr
20
20
Qr
15
15
Qr
10
10
Qr
5
5
0
At
0
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
16
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
VCE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
600
V
±15
V
75
A
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
200
18
R g on (Ω)
25 °C
I R M (A)
I R M (A)
250
IR M
IRM
200
150
150
100
100
I RM
50
50
IRM
0
0
0
At
20
40
60
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
Copyright Vincotech
80
100
120
140
I C (A)
0
160
4
6
8
10
12
14
16
18
R go n (Ω)
25 °C
T j:
2
At
V CE =
125 °C
V GE =
150 °C
IC=
10
600
V
±15
V
75
A
25 °C
T j:
125 °C
150 °C
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
20000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
20000
di F / dt
dir r/dt
di F / dt
di r r/ dt
15000
15000
10000
10000
5000
5000
0
0
0
20
40
60
80
100
120
140
0
160
5
10
I C (A)
600
V
V GE =
±15
V
R gon =
4
Ω
V CE =
At
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
600
V
±15
V
75
A
15
20
R g o n (Ω)
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
160
I C MAX
I c CHIP
140
120
M ODULE
100
Ic
80
60
V CE MAX
40
20
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
4
Ω
R goff =
4
Ω
Tj =
Copyright Vincotech
11
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Definitions
General conditions
=
125 °C
=
4Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
4Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
125
350
tdoff
%
%
IC
300
100
VCE
VCE 90%
VGE 90%
250
75
200
VGE
50
150
tEoff
VCE
VGE
100
25
tdon
IC
IC 1%
50
0
VCE 3%
IC 10%
V
0 GE 10%
tEon
-25
-0,1
0
0,1
0,2
0,3
0,4
0,5
-50
2,95
0,6
3
3,05
3,1
3,15
t (µs)
3,2
t (µs)
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
600
V
V C (100%) =
600
V
I C (100%) =
76
A
I C (100%) =
76
A
t doff =
0,180
µs
t don =
0,052
µs
t Eoff =
Figure 3.
0,553
µs
t Eon =
Figure 4.
0,170
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
350
fitted
%
VCE
IC
IC
%
300
100
IC 90%
250
75
200
IC 60%
50
150
IC 40%
VCE
100
25
IC 90%
tr
IC10%
0
50
tf
IC 10%
0
-25
0
0,05
0,1
0,15
0,2
0,25
0,3
0,35
-50
0,4
3
t (µs)
3,02
3,04
3,06
600
V
V C (100%) =
600
V
I C (100%) =
76
A
I C (100%) =
76
A
tf=
0,079
µs
tr =
0,006
µs
Copyright Vincotech
3,08
3,1
3,12
t (µs)
V C (100%) =
12
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Definitions
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
200
%
IC 1%
Poff
100
%
Eoff
Pon
150
Eon
75
100
50
50
25
VCE 3%
VGE 10%
VGE 90%
0
0
tEoff
tEon
-50
-25
-0,1
0
0,1
0,2
0,3
0,4
0,5
2,9
0,6
3
3,1
P off (100%) =
45,47
kW
P on (100%) =
45,47
kW
E off (100%) =
5,40
mJ
E on (100%) =
2,48
mJ
t Eoff =
0,55
µs
t Eon =
0,17
µs
Figure 7.
3,2
3,3
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
fitted
0
IRRM 10%
-50
Vd
-100
-150
IRRM 90%
IRRM 100%
-200
-250
3
3,1
3,2
3,3
3,4
t (µs)
V d (100%) =
600
V
I d (100%) =
76
A
I RRM (100%) =
-164
A
t rr =
0,132
µs
Copyright Vincotech
13
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Inverter Switching Definitions
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
150
150
%
%
Id
Qrr
100
Erec
100
50
tQrr
0
tErec
50
-50
Prec
0
-100
-150
2,8
3
3,2
3,4
3,6
3,8
4
-50
4,2
2,9
t (µs)
3,1
3,3
3,5
3,7
4,1
4,3
t (µs)
I d (100%) =
76
A
P rec (100%) =
45,47
kW
Q rr (100%) =
16,19
µC
E rec (100%) =
8,37
mJ
t Qrr =
1,00
µs
t Erec =
1,00
µs
Copyright Vincotech
3,9
14
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Ordering Code & Marking
Version
without thermal paste 17mm housing
with thermal paste 17mm housing
Ordering Code
30-P2126PA075NB-L288F69Y
30-P2126PA075NB-L288F69Y-/3/
NN-NNNNNNNNNNNNNN
NNNNNNNN WWYY UL
Vinco LLLLL SSSS
Text
Datamatrix
in DataMatrix as
L288F69Y
L288F69Y-/3/
in packaging barcode as
L288F69Y
L288F69Y-/3/
Name
Date code
UL & Vinco
Lot
Serial
NN-NNNNNNNNNNNNNN-NNNNNNNN
WWYY
UL Vinco
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin table [mm]
Pin
X
Y
Function
Pin
X
Y
1
0,9
0
S11
30
68,5
0
DC+3
2
0,9
3
G11
31
68,5
2,7
DC+3
3
3,9
0
DC-1
32
64,7
36
G16
4
3,9
2,7
DC-1
33
61,7
36
S16
5
3,9
5,4
DC-1
34
58,7
36
PH3
6
6,6
0
DC-1
35
56
36
PH3
7
15,2
0
DC+1
36
53,3
36
PH3
8
15,2
2,7
DC+1
37
50,6
36
PH3
9
17,9
0
DC+1
38
39,4
36
G14
10
17,9
2,7
DC+1
39
36,4
36
S14
11
26,2
0
S13
40
33,4
36
PH2
12
26,2
3
G13
41
30,7
36
PH2
13
29,2
0
DC-2
42
28
36
PH2
14
29,2
2,7
DC-2
43
25,3
36
PH2
15
29,2
5,4
DC-2
16
31,9
0
DC-2
44
45
14,1
11,1
36
36
G12
S12
Function
17
32,2
4,05
NTC
46
8,1
36
PH1
18
40,5
0
DC+2
47
5,4
36
PH1
19
40,5
2,7
20
43,2
0
DC+2
DC+2
48
49
2,7
0
36
36
PH1
Ph1
21
43,2
2,7
DC+2
22
51,5
0
S15
23
51,5
3
G15
24
54,5
0
DC-3
25
54,5
2,7
DC-3
26
54,5
5,4
DC-3
27
57,2
0
DC-3
28
65,8
0
DC+3
29
65,8
2,7
DC+3
Copyright Vincotech
15
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11,T12,T13,T14,T15,
T16
IGBT
1200V
75A
Inverter Switch
CH0075C-1200S002
D11,D12,D13,D14,D15,
D16
FWD
1200V
75A
Inverter Diode
CH0075R-1200S002
NTC
NTC
-
-
Thermistor
Copyright Vincotech
16
01 Jun. 2015 / Revision 1
30-P2126PA075NB-L288F69Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
42
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 2 packages see vincotech.com website.
Document No.:
Date:
30-P2126PA075NB-L288F69Y-D1-14
01 Jun. 2015
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
01 Jun. 2015 / Revision 1
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