10 0B066PA020SB M995F09 D2 14

10-0B066PA020SB-M995F09
datasheet
flow PACK 0 B
600 V / 20 A
Features
●
●
●
●
flow 0 B 17mm housing
IGBT3 (600 V) technology
Open emitter topology
New ultra-compact housing
Single-screw heat sink mounting
Schematic
Target applications
● Dedicated design for motor drive
Types
● 10-0B066PA020SB-M995F09
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
600
V
21
A
60
A
41
W
±20
V
Inverter Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T s = 80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
Short circuit ratings
Maximum Junction Temperature
Copyright Vincotech
T s = 80 °C
t SC
Tj ≤ 150°C
6
µs
V CC
VGE = 15V
360
V
175
°C
T jmax
1
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Parameter
Symbol
Condition
Value
Unit
600
V
22
A
40
A
34
W
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
T j = T jmax
T s = 80 °C
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
175
°C
Storage temperature
T stg
-40…+125
°C
Operation temperature under switching
condition
T jop
-40…+(T jmax - 25)
°C
4000
V
Creepage distance
min. 12,7
mm
Clearance
min. 12,7
mm
T j = T jmax
T s = 80 °C
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
V isol
DC Voltage
t p = 2s
> 200
CTI
2
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Characteristic Values
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Unit
Min
Typ
Max
5
5,8
6,5
1,52
1,9
Inverter Switch
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
V GE = V CE
0,00029 25
15
20
25
150
1,1
1,84
V
V
Collec tor-emitter cut-off c urrent
I CES
0
600
25
1,1
µA
Gate-emitter leakage current
I GES
20
0
25
300
nA
Internal gate resistance
rg
none
Input capacitance
C ies
1100
Output capacitance
C oes
Reverse transfer c apac itanc e
C res
Gate c harge
Qg
f = 1 MHz
0
25
25
71
Ω
pF
32
15
480
20
25
120
nC
2,30
K/W
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Thermal grease
thickness ≤ 50 µm
λ = 1 W /mK
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
25
t d(on)
tr
R goff = 16 Ω
R gon = 16 Ω
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
70
25
11
150
t d(off)
300
20
71
150
16
25
122
150
143
25
150
91
111
Q rFWD = 0,8 µC
25
Q rFWD = 1,7 µC
150
0,380
25
0,448
150
0,613
3
ns
0,259
mWs
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Parameter
Conditions
Symbol
VCE [V]
VGE [V]
VGS [V]
VGS [V]
Vr [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Unit
Typ
Max
25
1,70
1,95
125
1,58
Inverter Diode
Static
Forward voltage
VF
Reverse leakage current
Ir
20
25
600
27
150
V
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Thermal grease
thickness ≤ 50 µm
λ = 1 W /mK
2,80
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Qr
25
22
150
26
25
125
150
di /dt = 2072 A/µs
di /dt = 1922 A/µs
±15
E rec
(di rf/dt )max
300
20
A
ns
204
25
0,809
150
1,713
25
0,171
150
0,373
25
2050
150
741
25
21,5
µC
mWs
A/µs
Thermistor
Rated resistance
R
Deviation of R100
ΔR/R
Power dissipation
P
R100=1486 Ω
100
Power dissipation constant
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
4
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
60
I C (A)
I C (A)
60
50
45
40
30
30
20
15
10
0
0
0
1
2
tp =
250
µs
V GE =
15
V
3
4
25
T j:
V C E (V)
0
5
1
2
4
5
V C E (V)
°C
tp =
250
150 °C
Tj =
150
V GE from
7 V to 17 V in steps of 1 V
Typical transfer characteristics
3
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
20
Z t h(j
h(j--s)(K/W)
I C (A)
101
15
100
10
10-1
0,5
0,2
0,1
10-2
5
0,05
0,02
0,01
0,005
0
10-3
0
0
2
4
6
8
10
10-5
12
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
25
T j:
°C
D =
150 °C
10-1
100
101
t p (s)
102
tp / T
R th(j-s) =
2,30
K/W
IGBT thermal model values
Copyright Vincotech
5
R (K/W)
8,31E-02
τ (s)
4,36E+00
2,54E-01
7,20E-01
9,17E-01
1,88E-01
6,06E-01
5,84E-02
4,40E-01
1,40E-02
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switch Characteristics
Gate voltage vs Gate charge
IGBT
V GE = f(Q G)
V G E (V)
20
17,5
120V
15
480 V
12,5
10
7,5
5
2,5
0
0
15
30
45
60
75
90
105
120
135
150
Q G (nC)
At
I C=
20
A
Short circuit duration as a function of V GE
IGBT
Typical short circuit current as a function of V GE
IGBT
I SC = f(V GE)
14
350
I sc (A)
t pS C (µS)
t pSC = f(V GE)
12
300
10
250
8
200
6
150
4
100
2
50
0
0
10
11
12
13
14
12
15
13
14
15
V G E (V)
16
17
18
19
20
V G E (V)
At
At
V CE =
600
V
V CE ≤
600
V
Tj ≤
175
ºC
Tj ≤
175
ºC
Copyright Vincotech
6
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F)
Z th(j-s) = f(t p)
60
101
Z t h(j
h(j--s) (K/W)
IF (A)
FWD
Transient thermal impedance as a function of pulse width
45
100
30
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
15
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
25
T j:
10-1
100
101
102
t p (s)
°C
125 °C
D=
tp / T
R th(j-s) =
2,37
K/W
FWD thermal model values
R (K/W)
4,62E-02
τ (s)
8,95E+00
1,39E-01
1,10E+00
6,93E-01
1,96E-01
5,75E-01
6,44E-02
6,19E-01
9,95E-03
2,95E-01
1,01E-03
Thermistor
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
E (mWs)
E (mWs)
1,2
Eoff
1
Eon
0,8
0,9
Eon
Eon
Eoff
0,6
E off
0,6
Eoff
E on
0,4
0,3
0,2
0
0
0
5
10
15
20
25
30
35
40
0
I C (A)
25
With an inductive load at
300
V
V CE =
V GE =
±15
V
R gon =
16
Ω
R goff =
16
Ω
°C
150 °C
T j:
10
20
30
20
IC =
figure 3.
FWD
40
T j:
60
FWD
E rec = f(r g )
0,6
0,5
E (mWs)
E rec = f(I c)
Erec
70
150 °C
figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
0,5
R g ( Ω)
°C
A
Typical reverse recovered energy loss as a f unct ion of collect or current
E ( mWs)
50
25
With an inductive load at
300
V
V CE =
±15
V
V GE =
0,4
Erec
0,4
0,3
0,3
Erec
0,2
0,2
Erec
0,1
0,1
0
0
0
5
10
15
With an inductive load at
300
V
V CE =
±15
V
V GE =
R gon =
16
Copyright Vincotech
20
25
30
25
T j:
35
I C (A)
0
40
°C
10
20
With an inductive load at
300
V
V CE =
±15
V
V GE =
150 °C
Ω
IC=
8
20
30
40
50
25
T j:
60
r g (Ω)
70
°C
150 °C
A
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μs)
t ( μ s)
1
td(off )
td(off )
td(on)
tf
tf
0,1
0,1
td(on)
tr
0,01
0,01
tr
0,001
0,001
0
5
10
15
20
25
30
35
40
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
10
20
V CE =
300
V
V CE =
300
V
V GE =
±15
V
V GE =
±15
V
IC =
20
A
R gon =
16
Ω
R goff =
16
Ω
30
40
50
60
r g (Ω)
70
With an inductive load at
150
°C
Tj =
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,3
t rr (μs)
t rr (μs)
0,4
trr
0,25
trr
0,3
0,2
trr
trr
0,15
0,2
0,1
0,1
0,05
0
0
0
5
10
15
20
25
30
35
40
0
I C (A)
At
300
V
V GE =
±15
V
R gon =
16
Ω
V CE=
Copyright Vincotech
25
T j:
10
20
30
40
50
60
70
R g o n (Ω)
°C
At
150 °C
V CE =
V GE =
IC=
9
300
V
±15
V
20
A
25
T j:
°C
150 °C
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
2,5
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
Qr
2
Qr
2
1,5
1,5
Qr
1
1
Qr
0,5
0,5
0
At
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
I C (A)
300
V
V GE =
±15
V
R gon =
16
Ω
At
V CE =
25
T j:
°C
VCE=
At
150 °C
V GE =
I C=
figure 11.
FWD
300
V
±15
V
20
A
25
T j:
°C
150 °C
figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
30
60
I R M (A)
I R M (A)
IRM
25
70
R g on (Ω)
50
IRM
20
40
15
30
10
20
5
10
IRM
0
0
0
At
I RM
5
10
15
300
V
V GE =
±15
V
R gon =
16
Ω
V CE =
Copyright Vincotech
20
25
30
25
T j:
35
I C (A)
0
40
10
20
30
40
50
60
70
R go n (Ω)
°C
At
150 °C
V CE =
V GE =
IC=
10
300
V
±15
V
20
A
25
T j:
°C
150 °C
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
10000
2500
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F / dt
dir r/dt
2000
di F / dt
di r r/ dt
8000
1500
6000
1000
4000
500
2000
0
0
0
5
10
15
20
25
30
35
0
40
10
20
30
40
50
I C (A)
300
V
V GE =
±15
V
R gon =
16
Ω
V CE =
At
25
T j:
°C
At
150 °C
V CE =
V GE =
I C=
figure 15.
300
V
±15
V
20
A
25
T j:
60
70
R g o n (Ω)
°C
150 °C
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
45
40
I c CHIP
I C MAX
35
MODULE
30
25
Ic
20
15
V CE MAX
10
5
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
16
Ω
R goff =
16
Ω
Tj =
Copyright Vincotech
11
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switching Definitions
General conditions
=
150 °C
=
16 Ω
Tj
R gon
R goff
figure 1.
=
IGBT
16 Ω
figure 2.
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
140
250
%
%
120
tdoff
IC
200
VCE
100
VGE 90%
VCE 90%
150
80
VCE
IC
60
VGE
100
tEoff
40
tdon
50
20
VGE 10%
IC 1%
VGE
IC 10%
0
VCE 3%
0
tEon
-20
-0,11
-0,01
0,09
0,19
0,29
0,39
0,49
0,59
-50
2,76
0,69
t (µs)
2,85
2,94
3,03
3,12
V GE (0%) =
-15
V
V GE (0%) =
-15
V
V GE (100%) =
15
V
V GE (100%) =
15
V
V C (100%) =
300
V
V C (100%) =
300
V
I C (100%) =
20
A
I C (100%) =
20
A
t doff =
0,143
µs
t don =
0,070
µs
t Eoff =
figure 3.
0,476
µs
t Eon =
figure 4.
0,196
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,21
3,3
3,39
3,48
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
125
250
fitted
%
%
VCE
IC
100
IC
200
IC 90%
75
150
IC 60%
VCE
50
100
IC 90%
IC 40%
tr
25
50
IC10%
tf
0
IC 10%
0
-25
0,1
0,15
0,2
0,25
0,3
0,35
0,4
-50
0,45
3
t (µs)
3,025
3,05
3,075
3,125
3,15
t (µs)
V C (100%) =
300
V
V C (100%) =
300
V
I C (100%) =
20
A
I C (100%) =
20
A
tf=
0,110
µs
tr =
0,016
µs
Copyright Vincotech
3,1
12
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switching Definitions
figure 5.
IGBT
figure 6.
Turn-of f Swit ching Wavef orms & def init ion of tEof f
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
200
%
%
IC 1%
Poff
175
Eoff
100
Pon
150
75
125
Eon
100
50
75
25
50
VGE 90%
25
VCE 3%
VGE 10%
0
tEoff
-25
-0,1
0
0,1
0,2
0,3
tEon
0
0,4
0,5
0,6
-25
2,95
0,7
3
3,05
3,1
P off (100%) =
5,98
kW
P on (100%) =
5,98
kW
E off (100%) =
0,61
mJ
E on (100%) =
0,38
mJ
t Eoff =
0,48
µs
t Eon =
0,20
µs
figure 7.
3,15
3,2
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
Vd
0
IRRM 10%
-50
fitted
-100
IRRM 90%
IRRM 100%
-150
3
3,1
3,2
3,3
3,4
t (µs)
V d (100%) =
300
V
I d (100%) =
20
A
I RRM (100%) =
-26
A
t rr =
0,204
µs
Copyright Vincotech
13
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Inverter Switching Definitions
figure 8.
FWD
figure 9.
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
125
150
%
%
Id
Erec
Qrr
100
100
tQrr
50
tErec
75
0
50
-50
25
-100
0
Prec
-150
3
3,2
3,4
3,6
-25
3,8
3
t (µs)
3,1
3,2
3,3
3,5
3,6
t (µs)
I d (100%) =
20
A
P rec (100%) =
5,98
kW
Q rr (100%) =
1,71
µC
E rec (100%) =
0,37
mJ
t Qrr =
0,44
µs
t Erec =
0,44
µs
Copyright Vincotech
3,4
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04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Ordering Code & Marking
Version
without thermal paste with Solder pins 17mm housing
NN-NNNNNNNNNN
NNNN-TTTTTTTVV
Vinco LLLLL
WWYY SSSS UL
Ordering Code
10-0B066PA020SB-M995F09
Text
Datamatrix
Name
Type&Ver
Date code
Vinco&Lot
Serial&UL
NN-NNNNNNNNNNNNNN
TTTTTTTVV
WWYY
Vinco LLLLL
SSSS UL
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
27,8
0
G6
2
24,9
0
E6
3
19,1
0
G5
4
16,2
0
E5
5
11,6
0
NTC2
6
7,6
0
NTC1
7
2,9
0
E4
8
0
0
G4
9
0
13,7
U
10
2,9
13,7
G1
11
12
8,8
14,6
13,7
13,7
DC+
V
13
17,5
13,7
G2
14
15
24,9
27,8
13,7
13,7
G3
W
Copyright Vincotech
15
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T1-T6
IGBT
600 V
20 A
Inverter Switch
D1-D6
FWD
600 V
20 A
Inverter Diode
NTC
NTC
Copyright Vincotech
Comment
Thermistor
16
04 Feb. 2016 / Revision 2
10-0B066PA020SB-M995F09
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
200
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 B packages see vincotech.com website.
Package data
Package data for flow 0 B packages see vincotech.com website.
Document No.:
Date:
10-0B066PA020SB-M995F09-D2-14
04 Feb. 2016
Modification:
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
17
04 Feb. 2016 / Revision 2
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