Datasheet

UNISONIC TECHNOLOGIES CO., LTD
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UNA10R220M
Power MOSFET
7A, 100V N-CHANNEL FAST
SWITCHING MOSFET

DESCRIPTION
The UTC UNA10R220M is an N-Channel fast switching
MOSFET, it uses UTC’s advanced technology to provide customers
with a minimum on-state resistance and low gate charge, etc.
The UTC UNA10R220M is suitable for secondary synchronous
rectifier and LED TV back light.

SOP-8
FEATURES
* RDS(ON) < 22 mΩ @ VGS=10V, ID=7A
* Low gate charge

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UNA10R220MG-S08-R
Pin Assignment: S: Source
Package
G: Gate
SOP-8
D: Drain
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
(Note 5)
RATINGS
UNIT
100
V
±20
V
TA=25°C
7
A
ID
5
A
TA=70°C
Pulsed Drain Current (Note 2)
IDM
35
A
Single Pulse Avalanche Energy (Note 3)
EAS
16
mJ
Avalanche Current
IAS
13
A
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=55mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD ≤ 2.4A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
5. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper.

SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
t≤10s
50
Junction to Ambient (Note)
θJA
Steady-State
85
Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper.
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UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
△BVDSS/△TJ Reference to 25°C, ID=1mA
VDS=80V, VGS=0V, TJ=25°C
Zero Gate Voltage Drain Current
IDSS
VDS=80V, VGS=0V, TJ=55°C
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
△V
VGS(TH) Temperature Coefficient
GS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7A
(Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V, VDD=30V,
Rise Time
tR
RG=25Ω, ID=0.5A
Turn-OFF Delay Time
tD(OFF)
MIN
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MAX
UNIT
1
5
+100
-100
V
V/°C
µA
µA
nA
nA
100
0.089
1.0
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note 2)
VSD
IS=1A, VGS=0V, TJ=25°C
Continuous Source Current (Note 1, 3)
IS
VG=VD=0V, Force Current
Pulsed Source Current (Note 2, 3)
ISM
Body Diode Reverse Recovery Time
tRR
IF=7A, dI/dt=100A/µs,
TJ=25°C
Body Diode Reverse Recovery Charge
QRR
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%
3. The power dissipation is limited by 150°C junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
TYP
3.0
V
mV/°C
22
mΩ
-4.66
1120
240
72
1.9
pF
pF
pF
Ω
160
19
17.5
152
75
245
95
nC
nC
nC
ns
ns
ns
ns
1.2
7
35
44
25
V
A
A
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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