PANASONIC XN1501

Composite Transistors
XN1501
Silicon NPN epitaxial planer transistor
Unit: mm
For general amplification
+0.2
2.8 -0.3
+0.25
0.65±0.15
1.45±0.1
3
0.65±0.15
1
2
0 to 0.1
2SD601A × 2 elements
+0.1
+0.2
1.1 -0.1
●
0.8
■ Basic Part Number of Element
0.16 -0.06
+0.1
0.3 -0.05
0.95
+0.2
4
0.95
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2.9 -0.05
●
5
1.9±0.1
■
Features
1.5 -0.05
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
VCEO
50
V
VEBO
7
V
IC
100
mA
Peak collector current
ICP
200
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
Storage temperature
■ Electrical Characteristics
Parameter
Collector to base voltage
0.4±0.2
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 5R
Internal Connection
5
Tr1
1
4
3
Tr2
2
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
VCBO
IC = 10µA, IE = 0
60
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
7
V
Collector cutoff current
*1
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
0.1 to 0.3
ICBO
VCB = 20V, IE = 0
0.1
µA
ICEO
VCE = 10V, IB = 0
100
µA
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
160
Forward current transfer hFE ratio
hFE (small/large)*1
VCE = 10V, IC = 2mA
0.5
460
0.99
Collector to emitter saturation voltage
VCE(sat)
IC = 100mA, IB = 10mA
0.1
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
150
0.3
MHz
V
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5
pF
Ratio between 2 elements
1
Composite Transistors
XN1501
PT — Ta
IC — VCE
IB — VBE
60
500
1200
200
100
1000
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
600
400
200
0
40
80
120
0
0
160
2
4
6
8
10
0
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C)
IC — VBE
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
Collector current IC (mA)
200
160
25˚C
Ta=75˚C
–25˚C
80
40
160
120
80
40
0
0
0.4
0.8
1.2
1.6
0
2.0
0
Base to emitter voltage VBE (V)
200
hFE — IC
400
600
300
–25˚C
200
100
0.3
1
3
1
0.3
10
30
Collector current IC (mA)
100
25˚C
0.1
Ta=75˚C
–25˚C
0.03
0.3
1
3
10
30
100
Collector current IC (mA)
NV — IC
240
240
Noise voltage NV (mV)
Transition frequency fT (MHz)
25˚C
IC/IB=10
3
0.01
0.1
1000
VCB=10V
Ta=25˚C
Ta=75˚C
400
1.0
10
fT — I E
VCE=10V
0
0.1
800
300
500
0.8
30
Base current IB (µA)
600
0.6
100
VCE=10V
200
0.4
VCE(sat) — IC
240
120
0.2
Base to emitter voltage VBE (V)
IC — I B
240
Collector current IC (mA)
800
20µA
0
Forward current transfer ratio hFE
Base current IB (µA)
300
0
2
VCE=10V
Ta=25˚C
50
400
Collector current IC (mA)
Total power dissipation PT (mW)
Ta=25˚C
IB=160µA
180
120
60
VCE=10V
GV=80dB
Function=FLAT
200
Ta=25˚C
160
Rg=100kΩ
120
80
22kΩ
4.7kΩ
40
0
–0.1 –0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
0
10
20 30 50
100
200 300 500 1000
Collector current IC (µA)