Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 100 V VEBO 15 V IC 20 mA Peak collector current ICP 50 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) Parameter Collector to base voltage 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 4U Internal Connection 6 Tr1 1 2 5 4 ■ Electrical Characteristics 1.45±0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 0.95 +0.1 2SD1149 × 2 elements 2 0.16–0.06 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 5 0.8 +0.2 2.9 –0.05 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 100 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V ICBO VCB = 60V, IE = 0 0.1 µA ICEO VCE = 60V, IB = 0 1.0 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Noise voltage NV VCE = 10V, IC = 1mA, GV = 80dB Rg = 100KΩ, Function = FLAT 80 mV Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector cutoff current 400 2000 0.05 0.2 V 1 Composite Transistors XN5553 PT — Ta IC — VCE 500 IC — VBE 80 60 VCE=10V 200 100 60 IB=100µA 80µA 60µA 50µA 40µA 40 30µA 20µA 20 10µA 120 160 0 2 Ambient temperature Ta (˚C) 4 3 1 0.3 25˚C Ta=75˚C –25˚C 0.03 1 3 10 30 1200 25˚C –25˚C 900 600 300 0.3 100 Noise voltage NV (mV) 2 1 0 2 3 5 10 1 3 20 30 50 Collector to base voltage VCB 100 (V) 80 10 30 80 40 –1 –3 –10 –30 –100 Emitter current IE (mA) NV — VCE 100 Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C 0 0.03 2.0 120 0 –0.1 –0.3 100 VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 1.6 160 NV — IC 3 1.2 VCB=10V Ta=25˚C Collector current IC (mA) 4 0.8 fT — IE Ta=75˚C 0 0.1 100 f=1MHz IE=0 Ta=25˚C 1 0.4 Base to emitter voltage VBE (V) 1500 Cob — VCB 5 0 200 Collector current IC (mA) 6 0 12 VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.3 20 hFE — IC 30 0.01 0.1 10 1800 IC/IB=10 0.1 8 –25˚C 30 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 6 Transition frequency fT (MHz) 80 Noise voltage NV (mV) 40 Ta=75˚C 40 10 0 0 Collector output capacitance Cob (pF) Collector current IC (mA) 300 0 2 25˚C 50 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 0.1 0.3 Collector current IC (mA) 1 1 2 3 5 10 20 30 50 Collector to emitter voltage VCE (V) 100