Composite Transistors XN4404 Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO –10 V VEBO –7 V IC – 0.5 A Peak collector current ICP –1 A Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) Internal Connection Parameter Collector to base voltage Tr1 1 2 5 4 ■ Electrical Characteristics 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: CV 6 Storage temperature +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 2 0.16–0.06 0.95 5 0.95 +0.2 2.9 –0.05 +0.2 1.1–0.1 2SB970 × 2 elements 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● 1 0.8 ● 0.65±0.15 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –15 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Collector cutoff current ICBO VCB = –10V, IE = 0 hFE1 VCE = –2V, IC = –500mA* 100 60 Forward current transfer ratio – 0.1 µA 350 hFE2 VCE = –2V, IC = –1A* Collector to emitter saturation voltage VCE(sat) IC = –400mA, IB = –8mA* – 0.16 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –400mA, IB = –8mA* –0.8 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 130 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 pF V V *Pulse measurement 1 Composite Transistors XN4404 PT — Ta IC — VCE 500 VBE(sat) — IC –100 –1.2 IC/IB=50 300 200 100 –9mA –8mA –7mA –6mA –0.8 –5mA –0.6 –4mA –3mA –0.4 –2mA –0.2 0 –1mA 80 120 160 0 Ambient temperature Ta (˚C) –1 –3 –1 Ta=75˚C –0.3 25˚C –25˚C –0.1 –0.03 –3 –10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) 80 f=1MHz IE=0 Ta=25˚C 60 50 40 30 20 10 0 –1 –2 –3 –5 –10 25˚C Ta=–25˚C –1 75˚C –0.3 –0.1 –0.03 –6 –20 –30 –50 –100 Collector to base voltage VCB (V) Ta=75˚C 25˚C 300 –25˚C 200 100 0 –0.01 –0.03 –0.1 –0.3 –3 –10 fT — I E 200 500 400 –1 Collector current IC (A) VCB=–10V Ta=25˚C VCE=–2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –10 70 –5 –3 hFE — IC –30 –1 –4 600 IC/IB=50 –0.01 –0.01 –0.03 –0.1 –0.3 –3 –10 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –2 Transition frequency fT (MHz) 40 –30 –0.01 –0.01 –0.03 –0.1 –0.3 0 0 2 Base to emitter saturation voltage VBE(sat) (V) IB=–10mA –1.0 400 Collector current IC (A) Total power dissipation PT (mW) Ta=25˚C 160 120 80 40 0 –1 –3 Collector current IC (A) –10 1 2 3 5 10 20 30 50 Emitter current IE (mA) 100