Datasheet Download

R6076ENZ1
Nch 600V 76A Power MOSFET
Data Sheet
lOutline
VDSS
600V
RDS(on) (Max.)
0.042W
ID
76A
PD
120W
TO-247
(1) (2)
lFeatures
(3)
lInner circuit
1) Low on-resistance.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
(1) Gate
(2) Drain
(3) Source
4) Drive circuits can be simple.
*1 BODY DIODE
2) Fast switching speed.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
lApplication
Type
Switching Power Supply
Tube
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs)
450
Taping code
C9
Marking
R6076ENZ1
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
600
V
Tc = 25°C
ID *1
76
A
Tc = 100°C
ID *1
41.3
A
228
A
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID,pulse
*2
Gate - Source voltage
VGSS
20
V
Avalanche energy, single pulse
EAS *3
1954
mJ
Avalanche energy, repetitive
EAR *3
2.96
mJ
Avalanche current, repetitive
IAR
13.4
A
Power dissipation (Tc = 25°C)
PD
120
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
dv/dt *4
15
V/ns
Range of storage temperature
Reverse diode dv/dt
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© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lAbsolute maximum ratings
Parameter
Symbol
Drain - Source voltage slope
dv/dt
Conditions
VDS = 480V
Tj = 125°C
Values
Unit
50
V/ns
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
1.04
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
30
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
600
-
-
V
Tj = 25°C
-
0.1
100
mA
Tj = 125°C
-
-
1000
IGSS
VGS = 20V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2
-
4
V
-
0.038
0.042
W
Tj = 125°C
-
0.085
-
f = 1MHz, open drain
-
0.7
-
V(BR)DSS
VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
VGS = 10V, ID = 44.4A
Static drain - source
on - state resistance
Gate input resistance
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RDS(on) *5 Tj = 25°C
RG
2/12
W
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
22.5
45.0
-
Transconductance
gfs *5
VDS = 10V, ID = 38A
Input capacitance
Ciss
VGS = 0V
-
6500
-
Output capacitance
Coss
VDS = 25V
-
4700
-
Reverse transfer capacitance
Crss
f = 1MHz
-
520
-
Effective output capacitance,
energy related
Co(er)
-
235
-
Effective output capacitance,
time related
Turn - on delay time
Co(tr)
td(on) *5
tr *5
Rise time
Turn - off delay time
td(off) *5
tf *5
Fall time
VGS = 0V
VDS = 0V to 480V
Unit
S
pF
pF
-
1210
-
VDD ⋍ 300V, VGS = 10V
-
65
-
ID = 38A
-
170
-
RL = 7.87W
-
450
-
RG = 10W
-
170
-
ns
lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Total gate charge
Qg *5
VDD ⋍ 300V
-
260
-
Gate - Source charge
Qgs *5
ID = 50A
-
40
-
Gate - Drain charge
Qgd *5
VGS = 10V
-
135
-
Gate plateau voltage
V(plateau)
VDD ⋍ 300V, ID = 50A
-
6.0
-
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 PW  10ms, Duty cycle  1%
*3 ID = 13.4A, VDD = 50V
*4 Reference measurement circuits Fig.5-1.
*5 Pulsed
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© 2014 ROHM Co., Ltd. All rights reserved.
3/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Inverse diode continuous,
forward current
Values
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
76
A
-
-
228
A
-
-
1.5
V
-
990
-
ns
-
32
-
mC
-
65
-
A
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *5
Reverse recovery time
trr *5
Reverse recovery charge
Qrr *5
Peak reverse recovery current
Irrm *5
VGS = 0V, IS = 76A
IS = 76A
di/dt = 100A/ms
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
0.0691
Rth2
0.427
Rth3
0.250
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Unit
K/W
4/12
Symbol
Value
Cth1
0.0406
Cth2
0.873
Cth3
19.9
Unit
Ws/K
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lElectrical characteristic curves
Power Dissipation : PD/PD max. [%]
120
100
80
60
40
20
0
0
50
100
150
200
Normalized Transient Thermal Resistance : r(t)
Fig.1 Power Dissipation Derating Curve
Fig.2 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 30ºC/W
1
0.1
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.001
0.0001
0.00001
0.0001 0.001 0.01
0.1
1
10
100 1000
Pulse Width : PW [s]
Junction Temperature : Tj [°C]
Avalanche Energy : EAS / EAS max. [%]
Fig.3 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
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5/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
40
Drain Current : ID [A]
50
VGS= 10.0V
VGS= 8.0V
VGS= 7.0V
40
VGS= 6.0V
30
VGS= 5.0V
20
10
0
1
2
3
30
VGS= 4.5V
20
Ta=25ºC
Pulsed
4
0
5
0
Drain - Source Voltage : VDS [V]
VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
VGS= 5.5V
VGS= 5.0V
VGS= 4.5V
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
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20
30
40
50
Fig.7 Tj = 150°C Typical Output
Characteristics(II)
Drain Current : ID [A]
Drain Current : ID [A]
Ta=150ºC VGS= 10.0V
VGS= 8.0V
Pulsed
10
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150°C Typical Output
Characteristics(I)
76
72
68
64
60
56
52
48
44
40
36
32
28
24
20
16
12
8
4
0
VGS= 5.0V
10
VGS= 4.5V
0
VGS= 10.0V
VGS= 8.0V
VGS= 7.0V
VGS= 6.0V
Ta=25ºC
Pulsed
Drain Current : ID [A]
50
Fig.5 Typical Output Characteristics(II)
76
72
68
64
60
56
52
48
44
40
36
32
28
24
20
16
12
8
4
0
VGS= 10.0V
VGS= 8.0V
VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
VGS= 5.5V
VGS= 5.0V
VGS= 4.5V
Ta=150ºC
Pulsed
0
10
20
30
40
50
Drain - Source Voltage : VDS [V]
6/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
Fig.8 Breakdown Voltage
vs. Junction Temperature
Fig.9 Typical Transfer Characteristics
100
900
VDS= 10V
850
10
800
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
750
700
650
600
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
550
500
-50 -25
0
25
50
75
0.001
100 125 150
0
Junction Temperature : Tj [°C]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
6
8
10
Fig.11 Transconductance vs. Drain Current
100
VDS= 10V
ID= 1mA
VDS= 10V
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
4
Gate - Source Voltage : VGS [V]
4.0
3.5
3.0
2.5
2.0
2
-50 -25
0
25
50
75
1
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
0.01
100 125 150
Junction Temperature : Tj [°C]
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10
0.1
1
10
100
Drain Current : ID [A]
7/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lElectrical characteristic curves
100
Ta=25ºC
80
ID = 44.4A
60
ID = 50A
40
20
0
0
5
10
15
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
20
100
80
VGS= 10V
ID = 44.4A
60
40
20
0
-50 -25
Gate - Source Voltage : VGS [V]
10000
50
75
100 125 150
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current
10000
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Static Drain - Source On-State Resistance
: RDS(on) [mW]
25
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
Ta=25ºC
1000
VGS= 10V
100
10
1
0
0.01
0.1
1
10
100
Drain Current : ID [A]
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© 2014 ROHM Co., Ltd. All rights reserved.
VGS= 10V
1000
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
10
1
0.01
0.1
1
10
100
Drain Current : ID [A]
8/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lElectrical characteristic curves
Fig.16 Typical Capacitance
vs. Drain - Source Voltage
Fig.17 Coss Stored Energy
50
Coss Stored Energy : EOSS [uJ]
Capacitance : C [pF]
100000
Ciss
10000
1000
Coss
100
10
Crss
Ta=25ºC
f = 1MHz
VGS = 0V
0.01
0.1
1
10
100
40
35
30
25
20
15
10
5
0
1000
Ta=25ºC
45
0
Drain - Source Voltage : VDS [V]
600
Fig.19 Dynamic Input Characteristics
100000
20
Gate - Source Voltage : VGS [V]
Ta = 25ºC
VDD = 300V
VGS = 10V
RG= 10W
td(off)
10000
Switching Time : t [ns]
400
Drain - Source Voltage : VDS [V]
Fig.18 Switching Characteristics
tf
1000
td(on)
100
10
1
200
tr
0.01
0.1
1
10
16
14
12
10
8
6
Ta = 25ºC
VDD= 300V
ID= 50A
4
2
0
100
0
100
200
300
400
500
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2014 ROHM Co., Ltd. All rights reserved.
18
9/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lElectrical characteristic curves
Fig.21 Reverse Recovery Time
vs.Inverse Diode Forward Current
100
10000
VGS=0V
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
Fig.20 Inverse Diode Forward Current
vs. Source - Drain Voltage
10
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0.0
0.5
1.0
100
10
1.5
Source - Drain Voltage : VSD [V]
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1000
Ta=25ºC
di / dt = 100A / ms
VGS = 0V
0.1
1
10
100
Inverse Diode Forward Current : IS [A]
10/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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11/12
2014.03 - Rev.B
Data Sheet
R6076ENZ1
lDimensions (Unit : mm)
TO-247
DIM
A
A1
A2
b
b1
b2
c
D
D1
E
e
N
L
L1
ΦP
Q
S
MILIMETERS
MIN
MAX
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.20
2.92
3.20
0.61
0.80
20.80
21.34
17.43
17.83
15.75
16.13
5.45
3.00
19.81
20.57
3.81
4.32
3.55
3.65
5.59
6.20
6.15
INCHES
MIN
0.190
0.090
0.075
0.045
0.075
0.115
0.024
0.819
0.686
0.620
MAX
0.205
0.100
0.085
0.055
0.087
0.126
0.031
0.840
0.702
0.635
0.215
3.000
0.780
0.150
0.140
0.220
0.810
0.170
0.144
0.244
0.240
Dimension in mm / inches
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12/12
2014.03 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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More detail product informations and catalogs are available, please contact us.
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R1102A
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