DTA143ZUA(SOT 323)

WILLAS
FM120-M+
DTA143ZUA THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Features
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Pb-Free
package
is available
surge capability.
• High
Guardring
for
overvoltage
protection.
•
RoHS product for packing
code
suffix ”G”
• Ultra high-speed switching.
Halogen
free epitaxial
productplanar
for packing
code suffix “H”
chip, metal silicon junction.
• Silicon
Epoxy• meets
UL
94
V-0
flammability
rating
Lead-free parts meet environmental standards of
MoisureMIL-STD-19500
Sensitivity Level
/2281
Built-in• bias
of an inverter circuit
RoHSresistors
product forenable
packingthe
codeconfiguration
suffix "G"
without Halogen
connecting
external
resistors
free product
for input
packing
code suffix "H"
The bias
resistors consist
of thin-film resistors with complete
Mechanical
data
isolation to allow negative biasing of the input. They also have the
• Epoxy : UL94-V0 rated flame retardant
advantage of almost completely eliminating parasitic effects.
: Molded
plastic,
SOD-123H
• Case
Only the
on/off
conditions
need
to be set for operation, making
,
•
Terminals
:Plated
terminals,
solderable per MIL-STD-750
device design easy
•
•
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
•
•
SOT-323
.004(0.10)MIN.
•
0.146(3.7)
0.130(3.3)
0.040(1.0)
0.024(0.6)
.010(0.25)0.031(0.8) Typ.
.003(0.08)
0.031(0.8) Typ.
Method 2026
Polarity : Indicated by cathode band
Absolute•maximum
ratings @ 25к
: Any
Symbol • Mounting Position
Parameter
VCC
• Supply
Weightvoltage
: Approximated 0.011 gram
Dimensions in inches and (millimeters)
Typ
Max
Unit
-50
--V
VIN
Input voltage
--5.0
V
-100
IO
Output current
----- CHARACTERISTICS
mA
MAXIMUM RATINGS AND ELECTRICAL
IC(MAX)
-100
at
25℃dissipation
ambient temperature unless otherwise
PRatings
Power
--- specified.
200
--mW
d
T
Junction
--ć
j
Single
phase
halftemperature
wave, 60Hz, resistive of inductive---load. 150
TFor
Storage
temperature
-55
--150
ć
stg capacitive
load,
derate current by 20%
.087(2.20)
.070(1.80)
.054(1.35)
.045(1.15)
Min
---30
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Symbol
Parameter
MinVRRMTyp
Maximum Recurrent Peak
Reverse Voltage
VI(off)
-0.5
--Input voltage (VCC=-5V, IO=-100­A)
RMS Voltage
---VRMS --VMaximum
(VO=-0.3V, IO=-5mA)
I(on)
DC Blocking
Voltage
VMaximum
Output
voltage
=
(IO/II -5mA/-0.25mA
--- VDC --O(on)
II
=
Input current (VI -5V)
----Maximum
Average Forward Rectified Current
IO
Output current (VCC=
=-50V, VI 0)
---- IO(off)
GI Forward
DC current
gain (V
IO -10mA)
--O=-5V,
Peak
Surge Current
8.3
ms =
single
half sine-wave 80
IFSM
R1
Input resistance
3.29
4.7
superimposed on rated load (JEDEC method)
R2/R1
Resistance ratio
8.0
10
Typical Thermal
Resistance
(Note 2)
RΘJA
Transition
frequency
fT
--250
(VO =-10V,
IO=5mA,(Note
f=100MHz)
Typical Junction
Capacitance
1)
CJ
TJ
Operating Temperature Range
Storage Temperature Range
12
20Max
--14
-1.3
20-0.3
-1.8
-0.5
--6.11
12
---
13
30Unit
V
21
V
30 V
mA
­A
K¡
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
1.0
.004(0.10)MAX.
30
40
120
-55 to +125
@T A=125℃
NOTES:
.016(0.40)
.008(0.20)
-55 to +150
- 65 to +175
Dimensions in inches and (millimeters)
0.50
0.70
Pad Layout0.85
0.9
0.5
0.70
IR
0.92
10
0.90
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
Suggested
Solder
*Marking: 113VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
16 .056(1.40)
18
60 .047(1.20)
80
MHz
TSTG
CHARACTERISTICS
15
50
Maximum Forward Voltage at 1.0A DC
14
40
.043(1.10)
.032(0.80)
RATINGS
Electrical
Characteristics @ 25к
Marking Code
1.90 mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143ZUA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
design,
excellent power dissipation offers
• Batch processON
Characteristics
INPUT VOLTAGE
VI(ON)
-10
-3
-1
-3
(mA)
(V)
-30
Mechanical data
-0.3
OFF Characteristics
SOD-123H
-10
VCC=-5V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Ta=100 ℃
-1
IO
better reverse leakage current and thermal resistance.
VO=-0.3V
order to
• Low profile surface mounted application in
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
=25℃
MIL-STD-19500Ta/228
• RoHS product for packing code suffix "G"
=100
℃
Halogen free product Tfor
packing
code suffix "H"
a
OUTPUT CURRENT
-100
0.071(1.8)
0.056(1.4)
-0.3
Ta=25℃
-0.1
-0.03
• Epoxy : UL94-V0 rated flame retardant
-0.1
: Molded-1 plastic,-3 SOD-123H
-0.1• Case
-10
-100
-0.3
-30
,
OUTPUT CURRENT
I solderable
(mA)
• Terminals :Plated
terminals,
per MIL-STD-750
0.040(1.0)
0.024(0.6)
-0.01
-0.2
-0.4
0.031(0.8)
Typ.
O
-0.6
-0.8
INPUT VOLTAGE
VI(OFF)
-1.0
-1.2 Typ.
0.031(0.8)
(V)
Method 2026
• Polarity : Indicated by cathode band
G —— I
• Mounting PositionI : Any O
• Weight : Approximated 0.011 gram
1000
300
Dimensions in inches and (millimeters)
VO(ON) ——
IO
-1000
VO=-5V
IO/II=20
-300
RATINGS
30
Maximum
Recurrent Peak Reverse Voltage
10
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
3
1
Peak Forward
Surge Current 8.3 ms single half sine-wave
-10
-3
superimposed on rated load
(JEDEC method)
OUTPUT CURRENT I
Typical Thermal Resistance (Note 2)
-30
(mA)
O
CJ
VR
CHARACTERISTICS
VF
(pF)
CO
OUTPUT CAPACITANCE
IR
NOTES:
6
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
28
35
42
56
70
105
140
50
60
80
100
150
200
-0.3
1.0
-3 30
-1
OUTPUT CURRENT
400
@T A=125℃
Rated DC Blocking Voltage
120
200
40
-30
TJ
Maximum Average Reverse Current at @T A=25℃
115
150
40
120
PD
-30
-10
IO
(mA)
-100
-55 to +150
——
Ta
- 65 to +175
350
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Maximum Forward Voltage at 1.0A DC
8
18Ta=25℃ 10
80
100
30
TSTG
(mW)
10
16
60
21
-55 to +125
f=1MHz
Ta=25℃
15
50
PD
Operating Temperature Range
CO ——
Storage
12 Temperature Range
14
40
RΘJA
Typical Junction Capacitance (Note 1)
13
30
-10
-0.1
-100
POWER DISSIPATION
-1
-0.3
V0
-100
Ta=100℃ FM180-MH FM1100-MH FM1150-MH FM1200-M
FM140-MH FM150-MH FM160-MH
SYMBOL FM120-MH FM130-MH
Marking Code
-0.1
OUTPUT VOLTAGE
DC CURRENT GAIN
GI
Ratings at 25℃ ambientTtemperature
unless otherwise specified.
=100℃
a
100 phase half wave, 60Hz, resistive of inductive load.
Single
T =25℃
For capacitive load, derate currenta by 20%
(mV)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2- Thermal Resistance From Junction to Ambient
4
0.50
300
0.70
0.92
10
250
200
0.9
0.85
0.5
DTA143ZUA
150
100
2
50
0
-0
2012-06
2012-0
-4
-8
-12
REVERSE BIAS VOLTAGE
-16
VR
(V)
-20
0
0
25
50
75
100
AMBIENT TEMPERATURE
125
150
T (℃ )
WILLAS
ELECTRONIC COR
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143ZUA THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2)forward voltage drop.
DTA143ZUA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storage
Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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