WILLAS FM120-M+ DTA143ZUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. Pb-Free package is available surge capability. • High Guardring for overvoltage protection. • RoHS product for packing code suffix ”G” • Ultra high-speed switching. Halogen free epitaxial productplanar for packing code suffix “H” chip, metal silicon junction. • Silicon Epoxy• meets UL 94 V-0 flammability rating Lead-free parts meet environmental standards of MoisureMIL-STD-19500 Sensitivity Level /2281 Built-in• bias of an inverter circuit RoHSresistors product forenable packingthe codeconfiguration suffix "G" without Halogen connecting external resistors free product for input packing code suffix "H" The bias resistors consist of thin-film resistors with complete Mechanical data isolation to allow negative biasing of the input. They also have the • Epoxy : UL94-V0 rated flame retardant advantage of almost completely eliminating parasitic effects. : Molded plastic, SOD-123H • Case Only the on/off conditions need to be set for operation, making , • Terminals :Plated terminals, solderable per MIL-STD-750 device design easy • • 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • • • SOT-323 .004(0.10)MIN. • 0.146(3.7) 0.130(3.3) 0.040(1.0) 0.024(0.6) .010(0.25)0.031(0.8) Typ. .003(0.08) 0.031(0.8) Typ. Method 2026 Polarity : Indicated by cathode band Absolute•maximum ratings @ 25к : Any Symbol • Mounting Position Parameter VCC • Supply Weightvoltage : Approximated 0.011 gram Dimensions in inches and (millimeters) Typ Max Unit -50 --V VIN Input voltage --5.0 V -100 IO Output current ----- CHARACTERISTICS mA MAXIMUM RATINGS AND ELECTRICAL IC(MAX) -100 at 25℃dissipation ambient temperature unless otherwise PRatings Power --- specified. 200 --mW d T Junction --ć j Single phase halftemperature wave, 60Hz, resistive of inductive---load. 150 TFor Storage temperature -55 --150 ć stg capacitive load, derate current by 20% .087(2.20) .070(1.80) .054(1.35) .045(1.15) Min ---30 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Symbol Parameter MinVRRMTyp Maximum Recurrent Peak Reverse Voltage VI(off) -0.5 --Input voltage (VCC=-5V, IO=-100A) RMS Voltage ---VRMS --VMaximum (VO=-0.3V, IO=-5mA) I(on) DC Blocking Voltage VMaximum Output voltage = (IO/II -5mA/-0.25mA --- VDC --O(on) II = Input current (VI -5V) ----Maximum Average Forward Rectified Current IO Output current (VCC= =-50V, VI 0) ---- IO(off) GI Forward DC current gain (V IO -10mA) --O=-5V, Peak Surge Current 8.3 ms = single half sine-wave 80 IFSM R1 Input resistance 3.29 4.7 superimposed on rated load (JEDEC method) R2/R1 Resistance ratio 8.0 10 Typical Thermal Resistance (Note 2) RΘJA Transition frequency fT --250 (VO =-10V, IO=5mA,(Note f=100MHz) Typical Junction Capacitance 1) CJ TJ Operating Temperature Range Storage Temperature Range 12 20Max --14 -1.3 20-0.3 -1.8 -0.5 --6.11 12 --- 13 30Unit V 21 V 30 V mA A K¡ 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 1.0 .004(0.10)MAX. 30 40 120 -55 to +125 @T A=125℃ NOTES: .016(0.40) .008(0.20) -55 to +150 - 65 to +175 Dimensions in inches and (millimeters) 0.50 0.70 Pad Layout0.85 0.9 0.5 0.70 IR 0.92 10 0.90 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Suggested Solder *Marking: 113VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 16 .056(1.40) 18 60 .047(1.20) 80 MHz TSTG CHARACTERISTICS 15 50 Maximum Forward Voltage at 1.0A DC 14 40 .043(1.10) .032(0.80) RATINGS Electrical Characteristics @ 25к Marking Code 1.90 mm 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143ZUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Typical Characteristics Package outline Features design, excellent power dissipation offers • Batch processON Characteristics INPUT VOLTAGE VI(ON) -10 -3 -1 -3 (mA) (V) -30 Mechanical data -0.3 OFF Characteristics SOD-123H -10 VCC=-5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Ta=100 ℃ -1 IO better reverse leakage current and thermal resistance. VO=-0.3V order to • Low profile surface mounted application in optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of =25℃ MIL-STD-19500Ta/228 • RoHS product for packing code suffix "G" =100 ℃ Halogen free product Tfor packing code suffix "H" a OUTPUT CURRENT -100 0.071(1.8) 0.056(1.4) -0.3 Ta=25℃ -0.1 -0.03 • Epoxy : UL94-V0 rated flame retardant -0.1 : Molded-1 plastic,-3 SOD-123H -0.1• Case -10 -100 -0.3 -30 , OUTPUT CURRENT I solderable (mA) • Terminals :Plated terminals, per MIL-STD-750 0.040(1.0) 0.024(0.6) -0.01 -0.2 -0.4 0.031(0.8) Typ. O -0.6 -0.8 INPUT VOLTAGE VI(OFF) -1.0 -1.2 Typ. 0.031(0.8) (V) Method 2026 • Polarity : Indicated by cathode band G —— I • Mounting PositionI : Any O • Weight : Approximated 0.011 gram 1000 300 Dimensions in inches and (millimeters) VO(ON) —— IO -1000 VO=-5V IO/II=20 -300 RATINGS 30 Maximum Recurrent Peak Reverse Voltage 10 VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 3 1 Peak Forward Surge Current 8.3 ms single half sine-wave -10 -3 superimposed on rated load (JEDEC method) OUTPUT CURRENT I Typical Thermal Resistance (Note 2) -30 (mA) O CJ VR CHARACTERISTICS VF (pF) CO OUTPUT CAPACITANCE IR NOTES: 6 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 28 35 42 56 70 105 140 50 60 80 100 150 200 -0.3 1.0 -3 30 -1 OUTPUT CURRENT 400 @T A=125℃ Rated DC Blocking Voltage 120 200 40 -30 TJ Maximum Average Reverse Current at @T A=25℃ 115 150 40 120 PD -30 -10 IO (mA) -100 -55 to +150 —— Ta - 65 to +175 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Maximum Forward Voltage at 1.0A DC 8 18Ta=25℃ 10 80 100 30 TSTG (mW) 10 16 60 21 -55 to +125 f=1MHz Ta=25℃ 15 50 PD Operating Temperature Range CO —— Storage 12 Temperature Range 14 40 RΘJA Typical Junction Capacitance (Note 1) 13 30 -10 -0.1 -100 POWER DISSIPATION -1 -0.3 V0 -100 Ta=100℃ FM180-MH FM1100-MH FM1150-MH FM1200-M FM140-MH FM150-MH FM160-MH SYMBOL FM120-MH FM130-MH Marking Code -0.1 OUTPUT VOLTAGE DC CURRENT GAIN GI Ratings at 25℃ ambientTtemperature unless otherwise specified. =100℃ a 100 phase half wave, 60Hz, resistive of inductive load. Single T =25℃ For capacitive load, derate currenta by 20% (mV) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2- Thermal Resistance From Junction to Ambient 4 0.50 300 0.70 0.92 10 250 200 0.9 0.85 0.5 DTA143ZUA 150 100 2 50 0 -0 2012-06 2012-0 -4 -8 -12 REVERSE BIAS VOLTAGE -16 VR (V) -20 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 150 T (℃ ) WILLAS ELECTRONIC COR a WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA143ZUA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2)forward voltage drop. DTA143ZUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Maximum Forward Voltage at 1.0A DC 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.