PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications in the 1800 to 2100 MHz frequency band. This device is offered in a 20-pin, thermally-enhanced, overmolded plastic package for cool and reliable operation. Features Broadband Performance • Designed for wide RF bandwidth and low memory effects 34 5 30 0 • On-chip matching, integrated input DC block, 50ohm input and ~4-ohm output Return Loss (dB) Gain (dB) VDD = 28 V, IDQ 1 = 160 mA, IDQ 2 = 360 mA, Fixture tuned for 1930 - 1990 MHz Gain 26 -5 22 -10 18 -15 14 Return Loss 10 1700 1800 1900 2000 2100 PTMA180402M Package PG-DSO-20-63 • Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 5 W - Linear gain = 30 dB - Efficiency = 16% - Adjacent channel power = –52 dBc -20 • Typical two-tone CW performance at 1960 MHz, 28 V - Output power (PEP) = 40 W at IMD3 = –30 dBc - Efficiency = 34% -25 • Capable of handling 10:1 VSWR @ 28 V, 40 W (CW) output power 2200 Frequency (MHz) • Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F • Thermally-enhanced, RoHS-compliant package RF Characteristics CDMA Measurements (tested in Infineon production test fixture) VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, POUT = 5 W average, ƒ = 1960 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 29.5 30 — dB Power Added Efficiency PAE 14 16 — % Adjacent Channel Power Ratio ACPR — –52 –50 dBc table continued next page All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA, POUT = 40 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 30 — dB Power Added Efficiency PAE — 34 — % Intermodulation Distortion IMD3 — –32 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Final Stage On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.21 — W Operating Gate Voltage VDS = 28 V, IDQ1 = 160 mA, VGS 2.0 2.5 3.0 V IDQ2 = 360 mA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W Above 25°C derate by 1.0 W/°C Storage Temperature Range Overall Thermal Resistance (TCASE = 70°C, 40 W CW) POUT = 40 W, IDQ1 = 160 mA, IDQ2 = 360 mA Data Sheet Unit TSTG –40 to +150 Stage 1 RqJC 3.6 °C/W Stage 2 RqJC 1.5 °C/W 2 of 14 °C Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Moisture Sensitivity Level Level Test Standard Package Temperature 3 IPC/JEDEC J-STD-020 Unit 260 °C Ordering Information Type and Version Package Outline Package Description Shipping PTMA180402M V1 PG-DSO-20-63 Copper heat slug, plastic EMC body Tape Typical Performance, circuit tuned for 2140 MHz (data taken in Infineon test fixture) Broadband Sweep Power Sweep, P-1dB VDD = 28 V, IDQ 1 = 150 mA, IDQ 2 = 400 mA, Fixture tuned for 2110 - 2170 MHz 18 30 8 22 -2 IRL 18 -12 14 10 1700 1900 2100 2300 Gain 45 22 35 -22 14 -32 10 2500 55 26 18 25 Efficiency 2110 MHz 2140 MHz 2170 MHz 15 5 30 32 34 36 38 40 42 44 46 48 Output Power (dBm) Frequency (MHz) Data Sheet 65 Power Added Efficiency (%) Gain (dB) 26 34 Gain (dB) Gain 30 28 Input Return Loss (dB) 34 VDD = 28 V, IDQ 1 = 150 mA, IDQ 2 = 400 mA 3 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Typical Performance, circuit tuned for 2140 MHz (cont.) Two-tone Drive Up Two-tone Drive Up VDD = 28 V, IDQ1 = 150 mA, IDQ2 = 400 mA, 1 MHz tone spacing -40 35 IM3L 0. 7 -40 35 da180402m2140 Sept.2520, 2009 -50 8:20:58 PM a180402m-2140 MHz 31 33 35 37 39 41 43 5 29 45 Nornalized to 50 Ohms 31 33 45 -70 5 29 0. -70 0. 0 Efficiency 5 Efficiency -60 Average Output Power (dBm) 15 5 35 37 39 41 43 45 Average Output Power (dBm) 0. 15 0. IM3U -60 25 4 -50 45 IMD3 3 R --> Broadband Circuit Impedance — 2140 MHz –6.13 1940 5.51 –6.09 1960 5.39 –6.04 1980 5.27 –5.99 2000 5.15 –5.93 2020 5.03 –5.88 2040 4.92 –5.82 2060 4.80 –5.76 2080 4.68 –5.69 2100 4.57 –5.63 2120 4.45 –5.56 2140 4.34 –5.49 2160 4.23 –5.41 2180 4.12 –5.34 2200 4.01 –5.26 Data Sheet S Z0 = 50 Ω 0.5 5.63 0.4 1920 0.3 Z Load IN 0.2 –6.18 0.1 5.76 0.0 1900 W ARD LOA D T HS T O L ENG D Z Load 2200 0.1 MHz 1900 MHz E W AV <--- jX RD G E NE RA T O R - W AV E LE NGT H S T OW A MHz 0.1 0. 2 Z Load W Frequency 0. 2 4 of 14 Rev. 07.1, 2011-03-17 0. 3 0. 8 2110 MHz 2140 MHz 2170 MHz -30 Power Added Efficiency (%) 45 55 0. 6 -30 -20 IMD3 (dBc) 55 Power Added Efficiency (%) -20 0. IMD3 (dBc) VDD = 28 V, IDQ 1 = 150 mA, IDQ 2 = 400 mA ƒ = 2140 MHz, 1 MHz tone spacing PTMA180402M Confidential, Limited Internal Distribution Reference Circuit, tuned for 2140 MHz VD2 VD1 C1 100µF 50V C2 10µF C3 1µF C4 0.1µF C20 12pF C5 12pF 1 1 20 2 19 3 18 4 17 PTMA180402M 5 16 6 15 7 14 8 13 9 12 11 10 2 C6 .5pF VG1 R3 C7 10µF R1 0O C8 1µF C9 0.1µF C10 12pF 3 C24 100µF 50V C34 12pF 4 5 C31 1.8pF 6 7 C32 2.4pF 8 9 J2 RF_OUT C33 1.2pF 11 R4 R2 0O C23 10µF C30 1.8pF Q1 VG2 C22 1µF 10 DUT J1 RF_IN C21 0.1µF VD1 C11 10µF C12 1µF C13 0.1µF C14 12pF C15 12pF C16 0.1µF C17 1µF C18 10µF Q2 C19 100µF 50V C25 12pF C26 0.1µF C27 1µF M A 1 8 0 4 0 2 m _ 2 1 4 0 C28 10µF C29 100µF 50V M H z _ B D _ 9 - 2 - 0 9 Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PTMA180402M LDMOS IC PCB LTN/PTMA180402M–21 Rogers RO4350: 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 2140 MHz l1 0.150 λ, 50.0 Ω 12.73 x 1.70 0.501 x 0.067 l2 0.177 λ, 50.0 Ω 15.04 x 1.70 0.592 x 0.067 l3 0.026 λ, 10.4 Ω 2.01 x 13.00 0.079 x 0.512 l4 0.026 λ, 10.4 Ω 2.06 x 13.00 0.081 x 0.512 l5 0.026 λ, 34.2 Ω 2.13 x 3.00 0.084 x 0.118 l6 0.054 λ, 34.2 Ω 4.45 x 3.00 0.175 x 0.118 l7 0.066 λ, 43.5 Ω 5.56 x 2.11 0.219 x 0.083 l8 0.178 λ, 43.5 Ω 14.96 x 2.11 0.589 x 0.083 l9 0.059 λ, 50.0 Ω 5.03 x 1.70 0.198 x 0.067 l10, l11 0.137 λ, 47.8 Ω 11.56 x 1.83 0.455 x 0.072 Data Sheet 5 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Reference Circuit — 2140 MHz (cont.) VD2 VD1 C24 C23 C22 C21 C1 C2 C3 C20 C4 C5 C30 C6 RF_IN C10 C8 C14 C13 C15 C9 C7 C31 C32 C16 C17 C18 C12 C11 VG1 R1 Q1 R2 R4 C26 VG2 RF_OUT C25 VD1 R3 C34 C33 C19 C29 C27 C28 Q2 VD2 M A 1 8 0 4 0 2 m _ 2 1 4 0 M H z _ C D _ 9 - 2 - 0 9 Assembly diagram for 2140 MHz reference circuit* (not to scale) Component Description Suggested Manufacturer C1, C19, C24, C29 Electrolytic capacitor, 100 µF, 50 V C2, C7, C11, C18, C23, C28 Ceramic capacitor, 10 µF C3, C8, C12, C17, C22, C27 Ceramic capacitor, 1 µF C4, C9, C13, C16, C21, C26 Digi-Key P/N or Comment PCE3718CT-ND Murata GRM422Y5V106Z050AL Digi-Key 445-1411-2-ND Capacitor, 0.1 µF Digi-Key 399-1267-2-ND C5, C10, C12, C15, C20, C25, C34 Ceramic capacitor, 12 pF ATC 600S120JT C6 Ceramic capacitor, 0.5 pF ATC 100B 0R5 C30, C31 Ceramic capacitor, 1.8 pF ATC 600S1R8CT C32 Ceramic capacitor, 2.4 pF ATC 100B 2R4 C33 Ceramic capacitor, 1.2 pF ATC 100B 1R2 Transistor Infineon Technologies BCP56 Resistor, 0 W Digi-Key 603 Potentiometer, 2k W Digi-Key 3224W-202ETR-ND Q1, Q2 R1, R2 R3, R4 *Gerber files for this circuit available on request Data Sheet 6 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Typical Performance, circuit tuned for 1960 MHz (data taken in a production test fixture) CW Power Performance CW Performance at Selected Drain Voltage VDD = 28 V, IDQ 1 = 130 mA, IDQ 2 = 360 mA, ƒ = 1930, 1960, 1990 MHz VDD = 24 V, 28 V, 32 V IDQ 1 = 130 mA, IDQ 2 = 360 mA, ƒ = 1960 MHz 60 40 1930 MHz 1960 MHz 29 30 1990 MHz Efficiency 28 20 27 10 26 30 32 34 36 38 40 42 44 46 32 V 29 24 V 28 27 0 30 28 V 31 26 48 30 32 34 Two-tone Drive-up Adjacent Channel Power Ratio (dB) -10 -20 Efficiency IMD3 (dBc) Power Added Efficiency (%) 1930 MHz 30 -30 20 -40 10 -50 IMD3 0 Data Sheet 32 34 36 38 40 44 46 48 42 Average Output Power ( dBm ) 44 -35 30 1930 MHz -40 -45 25 Efficiency 1960 MHz 20 1990 MHz -50 15 -55 10 ACPR -60 5 -65 -60 30 42 VDD = 28 V, IDQ 1 = 160, IDQ 2 = 360 mA, ƒ = 1930, 1960, 1990 MHz 50 1990 MHz 40 CDMA IS-95 Drive-up, 3 Frequencies VDD = 28 V, IDQ 1 = 160 mA, IDQ 2 = 360 mA ƒ = 1930, 1960, 1990 MHz 1960 MHz 38 Output Power (dBm) Output Power (dBm) 40 36 0 29 46 Power Added Efficiency (%) Gain (dB) 30 50 Gain (dB) Gain 31 32 Power Added Efficiency (%) 32 31 33 35 37 39 41 Output Power (dBm) 7 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Typical Performance —1960 MHz (cont. Two-carrier WCDMA at Selected Temperatures Two-carrier WCDMA Drive Up VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA ƒ = 1930, 1960, 1990 MHz, PAR = 8 dB, 10 MHz spacing VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA ƒ = 1960 MHz, PAR = 8 dB, 10 MHz spacing 35 -25 Efficiency 1990 MHz -30 20 -35 15 -40 IM3 10 -45 5 32 34 36 38 40 –25°C 25 -35 15 -40 10 -50 30 42 32 -60 400 kHz -70 15 -75 600 kHz -80 5 -85 34 36 38 40 42 1930 MHz 1960 MHz 1990 MHz 30 3.0 2.5 Efficiency 25 2.0 20 1.5 15 1.0 10 0.5 EVM 5 0.0 30 44 32 34 36 38 40 42 44 Output Power ( dBm ) Output Power ( dBm ) Data Sheet 42 3.5 35 Power Added Efficiency (%) -55 -65 32 40 40 Edge Modulation Spectrum (dBc) Power Added Efficiency (%) Efficiency 25 30 38 Edge EVM Performance -50 10 36 VDD = 28 V, IDQ 1 = 160 mA, IDQ 2 = 360 mA ƒ = 1930, 1960, 1990 MHz 40 20 34 Output Power ( dBm ) Edge Modulation Performance 30 -45 IM3 VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 360 mA ƒ = 1930, 1960, 1990 MHz 1930 MHz 1960 MHz 1990 MHz -30 20 Output Power ( dBm ) 35 -25 Efficiency 90°C 5 -50 30 30 Error Vector Magnitude (%) 1960 MHz 25 Power Added Efficiency (%) 30 -20 25°C IM3 (dBc) -20 1930 MHz IM3 (dBc) Power Added Efficiency (%) 35 8 of 14 Rev. 07.1, 2011-03-17 0. 5 0. PTMA180402M 0. 45 4 0. 0 0. a180402m-1900 MHz 5 da180402m1900 Sept. 20, 2009 8:34:45 PM Broadband Circuit Impedance — 1960 MHz 3 1820 5.39 –6.87 1830 5.31 –6.83 1840 5.23 –6.79 1850 5.15 –6.75 1860 5.07 –6.70 1870 4.99 –6.66 1880 4.91 –6.61 1890 4.84 –6.56 1900 4.76 –6.51 1910 4.69 –6.47 1920 4.61 –6.42 1930 4.54 –6.36 1940 4.47 –6.31 1950 4.40 –6.26 1960 4.33 –6.21 1970 4.26 –6.15 1980 4.19 –6.10 1990 4.12 –6.04 2000 4.06 –5.99 IN S Z0 = 50 Ω 0.5 –6.91 0.4 5.48 0.3 1810 0.2 Z Load D 0.1 –6.95 0.0 5.56 Z Load 0.1 2200 MHz 1800 MHz A 1800 W <--- D LOA D S T OW AR NGT H VELE jX RD G E NE RA T O R - W AV E LE NGT H S T OW A MHz 0 .1 R --> Nornalized to 50 Ohms Z Load W 0. 2 Frequency 0. Confidential, Limited Internal Distribution 0. 2 0. 4 0. 7 0. 6 0. 5 0. 45 0. 05 0. 3 0 . 10 9 of 14 Rev. 07.1, 2011-03-17 0 .40 Data Sheet PTMA180402M Confidential, Limited Internal Distribution Reference Circuit, tuned for 1960 MHz VD2 VD1 C1 100µF 50V C2 10µF C3 1µF C4 0.1µF C19 12pF C5 12pF 1 20 2 19 3 18 4 17 PTMA180402M 5 16 6 15 7 14 8 13 9 12 10 11 1 VG1 R3 C6 10µF R1 0O C7 1µF C8 0.1µF C9 12pF 2 C23 100µF 50V C33 12pF 3 5 4 C30 1.8pF 6 7 8 J2 RF_OUT C32 1pF C31 2.7pF 10 R4 R2 0O C22 10µF C29 1.8pF Q1 VG2 C21 1µF 9 DUT J1 RF_IN C20 0.1µF VD1 C10 10µF C11 1µF C12 0.1µF C13 12pF C14 12pF C15 0.1µF C16 1µF C17 10µF Q2 C18 100µF 50V C24 12pF M A 1 8 0 4 0 2 m _ 1 9 6 0 C25 0.1µF C26 1µF C27 10µF C28 100µF 50V M H z _ B D _ 9 - 2 - 0 9 Reference circuit schematic for ƒ = 1960 MHz Circuit Assembly Information DUT PTMA180402M LDMOS IC PCB LTN/PTMA180402M Rogers RO4350: 0.76 mm [.030"] thick, er = 3.48, 1 oz. copper Microstrip Electrical Characteristics Dimensions: L x W (mm) Dimensions: L x W (in.) at 1960 MHz l1 0.300 λ,50.0 W 27.76 x 1.70 1.093 x 0.067 l2 0.024 λ,10.4 W 2.01 x 13.00 0.079 x 0.512 l3 0.024 λ,10.4 W 2.06 x 13.00 0.081 x 0.512 l4 0.037 λ,34.2 W 3.35 x 3.00 0.132 x 0.118 l5 0.046 λ,34.2 W 4.11 x 3.00 0.162 x 0.118 l6 0.097 λ,34.2 W 8.76 x 3.00 0.345 x 0.118 l7 0.127 λ,43.6 W 11.63 x 2.11 0.458 x 0.083 l8 0.054 λ,50.0 W 5.03 x 1.70 0.198 x 0.067 l9, l10 0.125 λ,47.8 W 11.56 x 1.83 0.455 x 0.072 Data Sheet 10 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Reference Circuit — 1960 MHz (cont.) VD2 VD1 C23 C22 C21 C20 C1 C2 C19 C3 C4 C5 C29 RF_IN C7 C8 C9 RF_OUT C13 C12 C14 C6 C30 C31 C15 C16 C17 C11 C10 VG1 R1 R2 Q1 R4 VG2 C33 C24 VD1 R3 C32 C18 C25 C26 C27 Q2 C28 VD2 M A 1 8 0 4 0 2 m _ 1 9 6 0 M H z _ C D _ 9 - 2 - 0 9 Assembly diagram for 1960 MHz reference circuit* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C18, C23, C28 Electrolytic capacitor, 100 µF, 50 V Digi-Key PCE3718CT-ND C2, C6, C10, C17, C22, C27 Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL C3, C7, C11, C16, C21, C26 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND C4, C8, C12, C15, C20, C25 Capacitor, 0.1 µF Digi-Key 399-1267-2-ND C5, C9, C13, C14, C19, C24, C33 Ceramic capacitor, 12 pF ATC 600S120JT C29, C30, C31 Ceramic capacitor, 1.8 pF ATC 600S1R8CT Ceramic capacitor, 1.0 pF ATC 100B 1R0 Transistor Infineon Technologies BCP56 Resistor, 0 W Digi-Key 603 Potentiometer, 2k W Digi-Key 3224W-202ETR-ND C32 Q1, Q2 R1, R2 R3, R4 *Gerber files for this circuit available on request Data Sheet 11 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Pinout Diagram Thermal FET 20 NC 2 19 NC VD Thermal FET 3 18 VD2, RF Out VG Thermal FET 4 17 VD2, RF Out RF In 5 16 VD2, RF Out RF In 6 15 VD2, RF Out VG1 7 14 VD2, RF Out VG2 8 13 VD2, RF Out VD1 9 12 NC VD1 10 11 NC VD1 1 VD1 a180402m_pd_9-3-2009 Source: Plated copper heat slug on backside of package. Data Sheet 12 of 14 Rev. 07.1, 2011-03-17 PTMA180402M Confidential, Limited Internal Distribution Package Outline Specifications Package PG-DSO-20-63 6. 13.00 [0.512] MAX INDEX PIN 1 10 1 2X 2.90 [0.114] MAX (2 PLS) 14.20±0.30 [0.559±0.012] 6.00 6. 2.95 [0.116] [0.236] 11.00 [0.433] 11 20 9 X 1.27 = 11.43 9 X .050 = . 450 TOP VIEW BOTTOM VIEW 1.10 [0.043] MAX (2 PLS) 4. 11.00±0.10 [0.433±0.004] 14°±1° (2 PLS) TOP/BOTTOM ALL SIDES SEE DETAIL A 3.50 [0.137] MAX 1.27 [0.050] 15.90±0.10 [0.626±0.004] 0.40+0.13 [0.015+0.005] 5. END VIEW 0.25mm M C A S B S SIDE VIEW 0.35 [0.014] GAUGE PLANE 0.15 [0.006] REF 0.25+0.07 –0.02 [0.010+0.003 –0. 001 ] PG -DSO -20- 63_po_02 - 19-2010 0+0.1 [0+0.004] STANDOFF 0.95±0.15 [0.037±0.006] 1.60 [0.063] REF DETAIL A Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. JEDEC drawing number: MO-166. 4. Does not include plastic or metal protrusion of 0.15 mm max per side. 5. Does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. Bottom metallization. 7. Sn plating (matte) : 5 – 15 micron [196.85 – 590.55 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 13 of 14 Rev. 07.1, 2011-03-17 PTMA180402M V1 Confidential, Limited Internal Distribution Revision History: 2011-03-17 Previous Version: none Page Subjects (major changes since last revision) 3, 11 Corrected typo 9 Removed voltage vs. temperature graph Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2011-03-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 14 of 14 Rev. 07.1, 2011-03-17