DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A • High power gain PIN DESCRIPTION • Easy power control 1 drain 1 • Excellent ruggedness 2 drain 2 • Source on underside eliminates DC isolators, reducing common mode inductance 3 gate 1 4 gate 2 5 source, connected to flange • Designed for broadband operation (HF to 800 MHz) • Internal input damping for excellent stability over the whole frequency range. 1 2 APPLICATIONS • Communication transmitter applications in the HF to 800 MHz frequency range. 5 3 4 Top view DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. MBK777 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 600 28 120 >14.5 >55 − f1 = 600; f2 = 600.1 28 120 (PEP) >14.5 >40 ≤−26 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) Ptot total power dissipation Tstg Tj − 18 A − 290 W storage temperature −65 +150 °C junction temperature − 200 °C Tmb ≤ 25 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2001 Nov 27 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE Tmb = 25 °C; Ptot = 290 W UNIT 0.6 K/W 0.2 K/W CHARACTERISTICS Tj = 25 °C per section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.4 mA 65 − − V VGSth gate-source threshold voltage VDS = 20 V; ID = 140 mA 4 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 1.2 µA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 18 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 25 nA gfs forward transconductance VDS = 20 V; ID = 4 A − 4 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 4 A − 160 − mΩ Ciss input capacitance VGS = 0; VDS = 28 V; f = 1 MHz; note 1 − 80 − pF Coss output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 43 − pF Crss feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 6 − pF Note 1. Capacitance values of the die only. MGW546 100 handbook, halfpage Coss (pF) 80 60 40 20 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Output capacitance as a function of drain-source voltage; typical values per section. 2001 Nov 27 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.2 K/W, unless otherwise specified. MODE OF OPERATION f (MHz) Gp (dB) ηD (%) dim (dBc) 600 28 120 >14.5 >55 − 28 120 (PEP) >14.5 >40 ≤−26 800 32 150 typ. 12.5 typ. 60 − f1 = 800; f2 = 800.1 32 150 (PEP) typ. 13 typ. 45 typ. −30 CW, class-AB 2-tone, class-AB PL (W) f1 = 600; f2 = 600.1 CW, class-AB 2-tone, class-AB VDS (V) Ruggedness in class-AB operation The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 100 MHz at rated load power. The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions. Impedances (per section) At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 Ω and ZL = 2.7 + j0.7 Ω. At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 Ω and ZL = 1.8 + j0.7 Ω. 2001 Nov 27 4 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 Application at 600 MHz MGW541 MGW540 20 0 80 handbook, halfpage Gp (dB) handbook, halfpage ηD (%) Gp 15 dim (dBc) −20 60 d3 ηD 10 40 −40 5 20 −60 0 0 50 100 150 PL (PEP) (W) −80 0 200 Th = 25 °C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB) Power gain and drain efficiency as functions of peak envelope load power; typical values. Fig.4 MGW542 20 80 handbook, halfpage Gp (dB) ηD (%) Gp 15 60 ηD 10 40 5 20 0 0 50 100 0 200 150 PL (W) Th = 25 °C; VDS = 28 V; IDQ = 1 A; CW, class-AB; f = 600 MHz; measured in 600 MHz test circuit. Fig.5 Power gain and drain efficiency as functions of load power; typical values. 2001 Nov 27 0 50 100 150 PL (PEP) (W) 200 Th = 25 °C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB) measured in 600 MHz test circuit. measured in 600 MHz test circuit. Fig.3 d5 5 Intermodulation distortion as a function of peak envelope output power; typical values. This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C20 3 C7 R2 L14 L5 L15 L3 L7 C18 L9 L11 C15 C1 50 Ω input C19 L1 6 B1 C3 C11 C5 C10 C6 C13 C2 L10 L13 L16 C9 C16 L8 L4 R3 L12 MGW539 TR1 R1 50 Ω C17 output B2 C14 C12 L2 + Vbias R4 8 Philips Semiconductors UHF power LDMOS transistor handbook, full pagewidth 2001 Nov 27 + VD L6 C8 Product specification Fig.6 Class-AB common source 600 MHz test circuit. BLF647 Dimensions in mm. Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 List of components class-AB 600 MHz test circuit (see Figs 6 and 7) COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor; note 1 30 pF C3 multilayer ceramic chip capacitor; note 1 8.2 pF C5 multilayer ceramic chip capacitor; note 1 16 pF C6 Tekelec trimmer 0.6 to 7.5 pF C7, C8 multilayer ceramic chip capacitor; note 1 100 pF DIMENSIONS C9 electrolytic capacitor 10 µF C10 multilayer ceramic chip capacitor; note 2 2 pF C11, C12 multilayer ceramic chip capacitor; note 2 10 pF C13 multilayer ceramic chip capacitor; note 2 8.2 pF C14 multilayer ceramic chip capacitor; note 2 1.5 pF C15, C16, C17 multilayer ceramic chip capacitor; note 2 100 pF C18 SMD capacitor 1 µF C19 electrolytic capacitor 470 µF C20 electrolytic capacitor 100 µF L1, L2 semi rigid coax UT70-25 Z = 25 Ω ±1.5 Ω 30.6 mm L3, L4 stripline; note 3 15 × 10 mm L5, L6 stripline; note 3 5.5 × 15 mm L7, L8 stripline; note 3 10 × 10 mm L9, L10 stripline; note 3 15 × 5 mm L11, L12 stripline; note 3 48.5 × 2.4 mm L13 stripline; note 3 10 × 2.4 mm CATALOGUE No. 2222 595 16754 L14 ferrite L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH B1 semi rigid coax (lambda/2) Z = 50 Ω ±1.5 Ω lambda/2 B2 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 48.5 mm R1 resistor 1 kΩ R2, R3 resistor 100 Ω R4 resistor 3,3 Ω Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm. 2001 Nov 27 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 95 handbook, full pagewidth 95 80 +Vbias +VD C20 R1 C9 L14 R2 L15 C7 R4 B2 C18 L1 C3 C5 C2 L2 C6 3 C8 BLF647 B1 C1 C11 C13 C10 L16 C12 8 C14 C15 C16 C17 C19 R3 MGW547 Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit. 2001 Nov 27 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 Application at 800 MHz MGW543 20 MGW544 0 80 handbook, halfpage handbook, halfpage ηD (%) Gp (dB) 15 Gp dim (dBc) 60 −20 40 −40 20 −60 d3 d5 10 ηD 5 0 0 −80 0 200 300 PL (PEP) (W) 100 Th = 25 °C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 800 MHz (−6 dB); f2 = 800.1 MHz (−6 dB) Power gain and drain efficiency as functions of peak envelope load power; typical values. Fig.9 MGW545 20 80 handbook, halfpage ηD (%) Gp (dB) 15 60 Gp 10 40 ηD 5 20 0 0 50 100 0 200 150 PL (W) Th = 25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 800 MHz; measured in 800 MHz test circuit. Fig.10 Power gain and drain efficiency as functions of load power; typical values. 2001 Nov 27 100 200 300 PL (PEP) (W) Th = 25 °C; VDS = 32 V; IDQ = 1 A. 2-tone: f1 = 800 MHz (−6 dB); f2 = 800.1 MHz (−6 dB) measured in 800 MHz test circuit. measured in 800 MHz test circuit. Fig.8 0 9 Intermodulation distortion as a function of peak envelope output power; typical values. This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C20 3 C7 R2 3 L14 L5 L15 L3 L7 C18 L9 L11 C15 C1 50 Ω input C19 L1 C10 B1 C12 C14 C5 C11 C13 L13 10 C2 L10 L16 C9 C16 L8 L4 R3 L12 MGW538 TR1 R1 50 Ω C17 output B2 C6 L2 + Vbias R4 8 Philips Semiconductors UHF power LDMOS transistor ok, full pagewidth 2001 Nov 27 + VD L6 C8 Product specification Fig.11 Class-AB common source 800 MHz test circuit. BLF647 Dimensions in mm. Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 List of components class-AB 800 MHz test circuit (see Figs 11 and 12) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C2 multilayer ceramic chip capacitor; note 1 30 pF C5 multilayer ceramic chip capacitor; note 1 10 pF C6 tekelec trimmer 0.6 to 7.5 pF C7, C8 multilayer ceramic chip capacitor; note 1 100 pF C9 electrolytic capacitor 10 µF C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF C12, C13 multilayer ceramic chip capacitor; note 2 10 pF C14 multilayer ceramic chip capacitor; note 2 4.7 pF C15, C16 multilayer ceramic chip capacitor; note 2 100 pF C17 multilayer ceramic chip capacitor; note 2 20 pF C18 SMD capacitor 1 µF C19 electrolytic capacitor 470 µF C20 electrolytic capacitor 100 µF L1, L2 semi rigid coax UT70-25 Z = 25 Ω ±1.5 Ω 30.6 mm L3, L4 stripline; note 3 15 × 10 mm L5, L6 stripline; note 3 5.5 × 15 mm L7, L8 stripline; note 3 10 × 10 mm L9, L10 stripline; note 3 15 × 5 mm L11, L12 stripline; note 3 48.5 × 2.4 mm L13 stripline; note 3 10 × 2.4 mm L14 ferrite L15, L16 Coilcraft SMD coil 1008CS-102XKBC 1 µH B1 semi rigid coax (lambda/2) Z = 50 Ω ±1.5 Ω lambda/2 B2 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 48.5 mm R1 resistor 1 kΩ R2, R3 resistor 100 Ω R4 resistor 3,3 Ω CATALOGUE No. 2222 595 16754 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm. 2001 Nov 27 11 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 95 handbook, full pagewidth 95 80 +VD +Vbias C20 R1 C9 L14 R2 L15 C7 R4 B2 C18 L1 C2 L2 C5 C6 3 C8 BLF647 B1 C1 L16 C11 C13 C10 C12 3 C14 8 C15 C16 C17 C19 R3 MGW548 Dimensions in mm. The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit. 2001 Nov 27 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT540A D A F D1 U1 B q C w2 M C M H1 1 H c 2 E1 p U2 5 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 8.51 8.26 0.15 0.10 inches D D1 e E E1 22.05 22.05 10.26 10.31 10.21 21.64 21.64 10.06 10.01 F H 1.78 1.52 H1 15.75 18.72 14.73 18.47 p Q q U1 U2 w1 w2 w3 3.38 3.12 2.72 2.46 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.25 0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-08-27 99-12-28 SOT540A 2001 Nov 27 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 27 14 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 NOTES 2001 Nov 27 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp16 Date of release: 2001 Nov 27 Document order number: 9397 750 08838