APT18F60B APT18F60S 600V, 19A, 0.37Ω Max, trr ≤200ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -24 7 D 3 PAK APT18F60B APT18F60S D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 19 Continuous Drain Current @ TC = 100°C 12 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 495 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 9 A 1 65 Thermal and Mechanical Characteristics Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 335 RθJC Junction to Case Thermal Resistance 0.37 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com 0.15 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 050-8158 Rev D 8-2011 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 600V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.57 .31 4 -10 0.37 5 250 1000 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 1mA Threshold Voltage Temperature Coefficient APT18F60B_S 600 VGS = 10V, ID = 9A 3 IDSS Min Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) ∆VGS(th)/∆TJ Test Conditions VGS = 0V, ID = 250μA Min Test Conditions VDS = 50V, ID = 9A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 17 3550 36 325 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 175 VGS = 0V, VDS = 0V to 400V 90 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 400V, ID = 9A tr td(off) tf Turn-Off Delay Time 90 19 37 20 23 60 18 VGS = 0 to 10V, ID = 9A, VDS = 300V RG = 4.7Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 65 S TJ = 25°C TJ = 125°C TJ = 25°C diSD/dt = 100A/μs TJ = 125°C VDD = 100V TJ = 25°C Unit 19 G ISD = 9A, TJ = 25°C, VGS = 0V ISD = 9A 3 Max TJ = 125°C ISD ≤ 9A, di/dt ≤1000A/μs, VDD = 400V, TJ = 125°C 175 315 0.65 1.56 6.7 9.2 1.0 200 380 V ns μC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 12.2mH, RG = 25Ω, IAS = 9A. 050-8158 Rev D 8-2011 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT18F60B_S 60 V GS 25 = 10V T = 125°C J TJ = -55°C V 20 ID, DRIAN CURRENT (A) 40 TJ = 25°C 30 20 TJ = 150°C 10 15 6V 10 5.5V 5 5V 4.5V TJ = 125°C 0 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 65 NORMALIZED TO 2.5 2.0 1.5 1.0 0.5 50 45 40 TJ = -55°C 35 30 TJ = 25°C 25 20 TJ = 125°C 15 10 5 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 5,000 Ciss TJ = -55°C 25 C, CAPACITANCE (pF) TJ = 25°C 20 TJ = 125°C 15 10 1000 100 Coss 5 0 0 16 5 10 15 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 60 VDS = 120V 10 VDS = 300V 6 VDS = 480V 4 2 0 0 65 12 8 Crss 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage ID = 9A 14 0 10 20 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 55 30 VGS, GATE-TO-SOURCE VOLTAGE (V) VDS> ID(ON) x RDS(ON) MAX. 60 VGS = 10V @ 9A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 55 50 45 40 TJ = 25°C 35 30 TJ = 150°C 25 20 15 10 5 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 050-8158 Rev D 8-2011 ID, DRAIN CURRENT (A) = 7 &,8V GS 50 APT18F60B_S 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 10 13μs 100μs Rds(on) 1 1ms 10ms 1 Rds(on) 13μs 100μs 1ms 10ms TJ = 150°C TC = 25°C 1 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 100ms TJ = 125°C TC = 75°C 0.1 10 DC line 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: 0.15 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 0.3 0.10 t2 SINGLE PULSE t1 = Pulse Duration t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration e3 100% Sn Plated 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drai n (Heat Sink) e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 1.0 D3PAK Package Outline TO-247 (B) Package Outline Drai n t1 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 050-8158 Rev D 8-2011 4.50 (.177) Max. 0.40 (.016) 1.016(.040) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) Gate Drai n Source 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs. } Source Drai n Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated