APT19M120J 1200V, 19A, 0.53Ω Max N-Channel MOSFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P ® D APT19M120J Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 19 Continuous Drain Current @ TC = 100°C 12 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 2165 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 14 A 1 104 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 545 RθJC Junction to Case Thermal Resistance 0.23 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com 0.15 -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Rev C 7-2011 Min Characteristic 050-8098 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 1200 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 14A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1200V VGS = 0V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 1.41 0.45 4 -10 0.53 5 TJ = 25°C 100 500 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT19M120J Min Test Conditions VDS = 50V, ID = 14A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 31 9670 115 715 Max Unit S pF 275 VGS = 0V, VDS = 0V to 800V 140 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 800V, ID = 14A tr td(off) tf 300 50 140 50 31 170 48 VGS = 0 to 10V, ID = 14A, VDS = 600V RG = 2.2Ω 6 , VGG = 15V Turn-Off Delay Time Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage ISD = 14A, TJ = 25°C, VGS = 0V trr Reverse Recovery Time ISD = 14A 3 Qrr Reverse Recovery Charge Peak Recovery dv/dt Typ Max Unit 19 A G VSD dv/dt Min D 104 S diSD/dt = 100A/μs, TJ = 25°C ISD ≤ 14A, di/dt ≤1000A/μs, VDD = 100V, TJ = 125°C 1 1290 33 V ns μC 10 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 22.09mH, RG = 2.2Ω, IAS = 14A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 050-8098 Rev C 7-2011 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -4.40E-7/VDS^2 + 5.34E-8/VDS + 7.59E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT19M120J 90 V GS 30 = 10V T = 125°C J 80 70 ID, DRIAN CURRENT (A) TJ = -55°C 60 50 40 TJ = 25°C 30 20 15 5V 10 TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 Figure 2, Output Characteristics 100 NORMALIZED TO 2.5 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 2.0 1.5 1.0 0.5 60 TJ = -55°C TJ = 25°C 40 TJ = 125°C 20 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 40 10,000 35 Ciss TJ = -55°C 30 C, CAPACITANCE (pF) gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. VGS = 10V @ 14A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ = 25°C 25 TJ = 125°C 20 15 10 1000 Coss 100 Crss 5 0 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 2 4 6 8 10 12 14 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 240V 10 VDS = 600V 8 6 VDS = 960V 4 2 0 0 100 ID = 14A 14 0 10 16 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) 0 90 80 70 60 50 TJ = 25°C 40 TJ = 150°C 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C 7-2011 0 = 6, 7, 8 & 9V GS 5 TJ = 125°C 10 V 20 050-8098 ID, DRAIN CURRENT (A) 25 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) APT19M120J 200 10 13μs 100μs 1ms 1 0.1 Rds(on) Rds(on) 10 100ms DC line 13μs 100μs TJ = 150°C TC = 25°C 1 DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 1ms 10ms Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 100ms TJ = 125°C TC = 75°C 1 10ms IDM C 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 t1 0.3 t2 t1 = Pulse Duration 0.05 t 0.1 0 SINGLE PULSE 0.05 10-5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 050-8098 Rev C 7-2011 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) * Source 30.1 (1.185) 30.3 (1.193) 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Drai n * Emitter terminals are shorte d internally. Current handlin g capability is equal for either Source terminal . 38.0 (1.496) 38.2 (1.504) * Source Gate 1.0