APT50DF170HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 1700V IF = 50A @ Tc = 80°C Application Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFRM Maximum repetitive forward current limited by TJmax Duty cycle = 50% 8.3ms Max ratings Unit 1700 V TC = 80°C 50 TJ = 45°C 100 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT50DF170HJ – Rev 1 October 2012 Absolute maximum ratings APT50DF170HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IF = 50A IRM Maximum Reverse Leakage Current VR = 1700V Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.8 1.9 Max 2.2 Unit V 250 500 µA Max Unit Dynamic Characteristics Symbol Characteristic Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 50A VR = 900V di/dt = 800A/µs Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 385 420 14 23 6 12 ns µC mJ Thermal and package characteristics Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight SOT-227 (ISOTOP®) Package Outline r = 4.0 (.157) (2 places) Max 0.7 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) Typ W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) www.microsemi.com 2-4 APT50DF170HJ – Rev 1 October 2012 Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt APT50DF170HJ Typical Performance Curve Forward Characteristic of diode Energy losses vs Collector Current 100 20 TJ=25°C 15 Err (mJ) IF (A) 80 60 40 TJ=125°C 10 VCE = 900V VGE = - 15V TJ = 125°C 5 20 TJ=125°C 0 0 0 0.5 1 1.5 VF (V) 2 2.5 0 3 20 40 60 80 100 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.8 Diode 0.9 0.6 0.4 0.7 0.5 0.3 0.2 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 3-4 APT50DF170HJ – Rev 1 October 2012 rectangular Pulse Duration (Seconds) APT50DF170HJ DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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