APTDF30H601G Fast Diode Full Bridge Power Module 3 4 Application CR1 1 • • • • 2 Features CR3 5 6 CR2 7 VRRM = 600V IC = 30A @ Tc = 90°C CR4 8 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers • • • • • • • 9 10 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration Benefits • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 600 V TC = 25°C 42 TC = 90°C TJ = 45°C 30 A 250 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTDF30H601G – Rev 3 Symbol VR VRRM May, 2013 Absolute maximum ratings APTDF30H601G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 30A IF = 60A IF = 30A Tj = 125°C Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.8 2.2 1.5 Max 2.2 V 250 500 VR = 200V Unit 36 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 30A VR = 400V di/dt = 200A/µs IF = 30A VR = 400V di/dt=1000A/µs Min Typ Tj = 25°C 25 Tj = 125°C 160 Tj = 25°C Tj = 125°C 35 480 Tj = 25°C 3 Tj = 125°C 6 Tj = 125°C Max Unit ns nC A 85 ns 920 nC 20 A Thermal and package characteristics Min 4000 -40 -40 -40 2 Typ Max 1.2 175 125 100 3 80 Unit °C/W V °C N.m g May, 2013 Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight www.microsemi.com 2-5 APTDF30H601G – Rev 3 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDF30H601G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 100 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125°C VR=400V 150 125 60 A 100 30 A 75 15 A 50 3.0 0 200 TJ=125°C VR=400V 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 1.5 600 800 1000 1200 IRRM vs. Current Rate of Charge 30 TJ=125°C VR=400V 25 60 A 20 15 30 A 15 A 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 175 Duty Cycle = 0.5 TJ=175°C 40 125 100 75 50 30 May, 2013 150 IF(AV) (A) C, Capacitance (pF) 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 20 10 25 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) www.microsemi.com 3-5 APTDF30H601G – Rev 3 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 120 APTDF30H601G SP1 Package outline (dimensions in mm) www.microsemi.com 4-5 APTDF30H601G – Rev 3 May, 2013 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTDF30H601G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 5-5 APTDF30H601G – Rev 3 May, 2013 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.