APTDC20H1201G SiC Diode Full Bridge Power Module 3 VRRM = 1200V IF = 20A @ Tc = 80°C 4 Application CR1 1 2 Features CR3 5 6 CR2 CR4 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers 7 8 - 9 10 SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 80°C TC = 25°C Max ratings Unit 1200 V 20 250 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDC20H1201G – Rev 1 October, 2012 Absolute maximum ratings APTDC20H1201G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Test Conditions Min Tj = 25°C IF = 20A Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 20A, VR = 600V di/dt =1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Typ 1.6 2.3 64 112 Max 1.8 3.0 400 2000 Unit V µA 80 nC 192 138 pF Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 1 175 125 100 3 80 Unit °C/W V °C N.m g See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 2-4 APTDC20H1201G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTDC20H1201G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C TJ=75°C 20 TJ=125°C 10 TJ=175°C 150 100 0.5 1 1.5 2 2.5 3 TJ=125°C 50 0 0 TJ=75°C 3.5 VF Forward Voltage (V) TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 1200 1000 800 600 400 200 0 1 10 100 VR Reverse Voltage 1000 www.microsemi.com 3-4 APTDC20H1201G – Rev 1 October, 2012 C, Capacitance (pF) 1400 APTDC20H1201G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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