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APTML10UM09R004T1AG
VDSS = 100V
RDSon = 09m typ @ Tj = 25°C
ID = 154A* @ Tc = 25°C
Linear MOSFET
Power Module
Application

Electronic load dedicated to power supplies and
battery discharge testing
Features





Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits






Pins 1/2 ; 5/6 must be shorted together
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation 
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
154*
115*
430
±30
10
480
100
50
3000
Unit
V
A
V
m
W
A
October, 2012
ID
Parameter
Drain - Source Breakdown Voltage
mJ
* Output current must be limited to 67A @ TC=25°C and 47A @ TC=80°C to not exceed the shunt specification.
 In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–4
APTML10UM09R004T1AG – Rev 1
Symbol
VDSS
APTML10UM09R004T1AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 100V
VGS = 0V,VDS = 80V
Min
Typ
Max
100
500
10
4
±100
Unit
Typ
9875
3940
1470
Max
Unit
Typ
4.4
2
Max
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 69.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
9
2
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
pF
Shunt Electrical Characteristics
Symbol Characteristic
Rsh
Resistance value
Tsh
Tolerance
Psh
Load capacity
Ish
Current capacity
Min
TC=25°C
TC=80°C
TC=25°C
TC=80°C
20
10
67
47
Unit
m
%
W
A
Temperature sensor PTC
Symbol
R25
R100/R25
R-55/R25
B
Characteristic
Resistance @ 25°C
Resistance ratio
Resistance ratio
Temperature coefficient
Tamb=100°C & 25°C
Tamb=-55°C & 25°C
Min
1980
1.676
0.48
Typ
1.696
0.49
7900
Max
2020
1.716
0.50
Unit

ppm/K
Thermal and package characteristics
Min
MOSFET
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
www.microsemi.com
M4
4000
-40
-40
-40
2
Typ
Max
0.26
150
125
100
3
80
Unit
°C/W
V
October, 2012
Characteristic
Junction to Case Thermal Resistance
°C
N.m
g
2–4
APTML10UM09R004T1AG – Rev 1
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
APTML10UM09R004T1AG
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Performance Curve (linear mode)
Power vs Drain source voltage
Drain Current vs Drain source voltage
400
TJ=125°C
TJ=125°C
300
250
200
1
0
20
40
60
80
100
0
25
50
75
100
Drain Source Voltage (V)
Drain Source Voltage (V)
www.microsemi.com
3–4
October, 2012
10
350
APTML10UM09R004T1AG – Rev 1
Dissipated Power (W)
Drain Current (A)
100
APTML10UM09R004T1AG
DISCLAIMER
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
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intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
www.microsemi.com
4–4
APTML10UM09R004T1AG – Rev 1
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
October, 2012
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
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