APTDF200H60G Diode Full Bridge Power Module VRRM = 600V IC = 200A @ Tc = 80°C Application + AC1 AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Duty cycle = 50% Max ratings Unit 600 V TC = 25°C 270 TC = 80°C TC = 45°C TC = 45°C 200 270 1500 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTDF200H60G – Rev 2 October, 2012 Absolute maximum ratings APTDF200H60G Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 200A IF = 400A Tj = 125°C IF = 200A Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.6 2.0 1.3 Max 2.0 V 350 600 VR = 600V Unit 380 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF=1A,VR=30V di/dt = 200A/µs IF = 200A VR = 400V di/dt = 400A/µs IF = 200A VR = 400V Min Typ Tj = 25°C 34 Tj = 25°C 160 Tj = 125°C 220 Tj = 25°C Tj = 125°C 580 3060 Tj = 25°C 10 Tj = 125°C 26 Tj = 125°C di/dt = 2000A/µs Max Unit ns ns nC A 100 ns 5.78 µC 88 A Thermal and package characteristics Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals www.microsemi.com M6 M5 Typ Max 0.285 175 125 100 5 3.5 300 Unit °C/W V °C N.m g 2-5 APTDF200H60G – Rev 2 October, 2012 Symbol RthJC VISOL TJ TSTG TC APTDF200H60G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 500 TJ=175°C 400 300 TJ=25°C 200 TJ=125°C TJ=-55°C 100 0 0.0 0.5 1.0 1.5 2.0 2.5 200 A 200 150 100 A 100 50 3.0 0 400 QRR vs. Current Rate Charge 400 A TJ=125°C VR=400V 6 200 A 100 A 4 2 0 0 400 800 1200 1600 2000 2400 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 8 800 1200 1600 2000 2400 -diF/dt (A/µs) IRRM vs. Current Rate of Charge 120 TJ=125°C VR=400V 100 400 A 200 A 80 100 A 60 40 20 0 0 400 -diF/dt (A/µs) 800 1200 1600 2000 2400 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 300 2800 2400 Duty Cycle = 0.5 TJ=175°C 250 2000 IF(AV) (A) C, Capacitance (pF) TJ=125°C VR=400V 400 A 250 1600 1200 200 150 100 800 50 400 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) www.microsemi.com 3-5 APTDF200H60G – Rev 2 October, 2012 IF, Forward Current (A) Trr vs. Current Rate of Charge 300 600 APTDF200H60G www.microsemi.com 4-5 APTDF200H60G – Rev 2 October, 2012 SP6 Package outline (dimensions in mm) APTDF200H60G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. 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