20ETF..FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • The fully isolated package (VINS = 2500 VRMS) is UL E78996 approved Base cathode • Compliant to RoHS directive 2002/95/EC 2 • Designed and qualified for industrial level APPLICATIONS TO-220AC FULL-PAK 1 Cathode 3 Anode • Output rectification and choppers and converters freewheeling • Input rectifications where severe conducted EMI should be met in inverters, restrictions on DESCRIPTION PRODUCT SUMMARY The 20ETF..FPPbF soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. VF at 10 A < 1.2 V IFSM 300 A VRRM 200 V to 600 V The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VALUES UNITS 20 A VRRM 200 to 600 V IFSM 300 A VF 10 A, TJ = 25 °C 1.2 V trr 1 A, 100 A/μs 60 ns - 40 to 150 °C TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 20ETF02FPPbF 200 300 20ETF04FPPbF 400 500 20ETF06FPPbF 600 700 IRRM AT 150 °C mA 5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current Maximum peak one cycle non-repetitive surge current IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 94 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 UNITS A A2s A2s * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94095 Revision: 06-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 20ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM TEST CONDITIONS VALUES 20 A, TJ = 25 °C 1.30 60 A, TJ = 25 °C 1.67 rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TJ = 150 °C TJ = 25 °C V 12.5 m 0.9 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 5.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS VALUES UNITS IF at 20 Apk 160 ns 100 A/μs 25 °C 10 A 1.25 μC Typical 0.6 IFM trr ta tb t dir dt Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation UNITS - 40 to 150 °C 1.5 62 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES °C/W 1.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 20ETF02FP Marking device Case style TO-220 FULL-PAK 20ETF04FP 20ETF06FP www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94095 Revision: 06-Aug-10 20ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 45 20ETF.. Series RthJC (DC) = 1.5 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 130 120 Ø Conduction angle 110 100 90 60° 90° 120° 180° 30° 80 5 10 35 30 25 20 RMS limit Ø Conduction period 15 10 20ETF.. Series TJ = 150 °C 5 0 25 20 15 5 10 20 15 25 30 35 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 300 At any rated load condition and with rated VRRM applied following surge. 20ETF.. Series RthJC (DC) = 1.5 K/W 140 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) DC 180° 120° 90° 60° 30° 40 0 0 130 Ø 120 Conduction period 110 30° 100 90° 90 60° 120° 180° 250 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 100 20ETF.. Series DC 50 80 0 5 10 15 20 30 25 35 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 35 550 25 180° 120° 90° 60° 30° 20 RMS limit 30 500 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Vishay Semiconductors 15 Ø 10 Conduction angle 20ETF.. Series TJ = 150 °C 5 0 5 10 15 20 450 25 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 100 0 Maximum non-repetitive surge current versus pulse train duration. 50 0.001 20ETF.. Series 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94095 Revision: 06-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 20ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A 1000 4.0 100 TJ = 25 °C TJ = 150 °C 10 IFM = 20 A 2.5 2.0 IFM = 10 A 1.5 1.0 IFM = 5 A 20ETF.. Series IFM = 1 A 1 0 1 2 3 0 5 4 200 400 600 800 1000 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.20 10 20ETF.. Series TJ = 25 °C 0.15 IFM = 30 A IFM = 20 A 0.10 IFM = 10 A 0.05 20ETF.. Series TJ = 150 °C 9 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 3.0 0.5 0 IFM = 5 A IFM = 1 A 0 IFM = 30 A 8 7 IFM = 20 A 6 5 4 IFM = 10 A 3 2 IFM = 5 A 1 IFM = 1 A 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.5 70 20ETF.. Series TJ = 150 °C 0.4 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.3 0.2 0.1 20ETF.. Series TJ = 25 °C 60 Irr - Maximum Reverse Recovery Current (A) trr - Maximum Reverse Recovery Time (µs) IFM = 30 A 20ETF.. Series TJ = 25 °C 3.5 Qrr - Maximum Reverse Recovery Charge (µC) Instantaneous Forward Current (A) Vishay Semiconductors IFM = 30 A 50 IFM = 20 A 40 IFM = 10 A 30 IFM = 5 A 20 10 0 IFM = 1 A 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94095 Revision: 06-Aug-10 20ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay Semiconductors 100 20ETF.. Series TJ = 150 °C IFM = 30 A Irr - Maximum Reverse Recovery Current (A) 80 IFM = 20 A 60 IFM = 10 A 40 IFM = 5 A 20 IFM = 1 A 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (K/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady state value (DC operation) 0.1 Single pulse 20ETF.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94095 Revision: 06-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 20ETF..FPPbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 20 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code 20 E T F 06 FP PbF 1 2 3 4 5 6 7 1 - Current rating (20 = 20 A) 2 - Circuit configuration: E = Single diode 3 - Package: T = TO-220AC 4 - Type of silicon: F = Fast soft recovery rectifier 5 - Voltage code x 100 = VRRM 6 - FULL-PAK 7 - 02 = 200 V 04 = 400 V 06 = 600 V None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95005 Part marking information www.vishay.com/doc?95009 SPICE model www.vishay.com/doc?95410 www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94095 Revision: 06-Aug-10 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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