CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXDM7002A is special dual version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This special Dual Transistor device offers low rDS(ON) and low VDS (ON). Marking Code is X02A SYMBOL VDS VDG VGS ID IS IDM ISM PD 60 60 40 280 280 1.5 1.5 350 UNITS V V V mA mA A A mW TJ,Tstg ΘJA -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSSF VGS=20V, VDS=0V 100 nA IGSSR VGS=20V, VDS=0V 100 nA IDSS VDS=60V, VGS=0V 1.0 µA IDSS VDS=60V, VGS=0V, Tj=125°C 500 µA ID(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 mA BVDSS VGS=0V, ID=10µA 60 V VGS(th) VDS=VGS, ID=250µA 1.0 2.5 V VDS(ON) VGS=10V, ID=500mA 1.0 V VDS(ON) VGS=5.0V, ID=50mA 0.15 V rDS(ON) VGS=10V, ID=500mA 2.0 Ω rDS(ON) VGS=10V, ID=500mA, Tj=125°C 3.5 Ω rDS(ON) VGS=5.0V, ID=50mA 3.0 Ω rDS(ON) VGS=5.0V, ID=50mA, Tj=125°C 5.0 Ω gFS VDS ≥ 2VDS(ON), ID=200mA 80 mmhos Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ton VDD=30V, VGS=10V, ID=200mA, 20 ns toff RG=25Ω, RL=150Ω 20 ns VSD VGS=0V, IS=400mA 1.2 V R0 ( 05-December 2001) Central TM Semiconductor Corp. CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE - MECHANICAL OUTLINE Marking Code: X02A LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 R0 ( 05-December 2001)