STB3NA60-1 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B3NA60-1 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 600 V <4 Ω 2.9 A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 12 I2PAK TO-262 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V DS Drain-source Voltage (V GS = 0) Parameter 600 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 600 V V GS Gate-source Voltage ± 30 V o ID Drain Current (continuous) at T c = 25 C 2.9 A ID Drain Current (continuous) at T c = 100 C o 1.8 A Drain Current (pulsed) 11.6 A I DM (•) P t ot o Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature 80 W 0.64 W/ o C -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1996 1/9 STB3NA60-1 THERMAL DATA R t hj-ca se R t hj- amb R t hj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ o 1.56 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 2.9 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 50 V) 42 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 1.6 mJ I AR Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, δ < 1%) 1.8 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA V GS = 0 Min. Typ . Max. 600 Un it V I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C 250 1000 µA µA I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 30 V ±100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA Min. Typ . Max. Un it 2.25 3 3.75 V 3.3 4 8 Ω V GS(th) Gate T hreshold Voltage V DS = VGS R DS( on) Static Drain-source On Resistance V GS = 10 V V GS = 10 V ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V 2.9 Parameter Test Cond ition s Min. Typ . 1 2 I D = 1.5 A I D = 1.5 A T C = 100 oC A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/9 Forward Transconductance V DS > I D(on) x R DS(on) max I D = 1.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz 380 57 17 Max. Un it S 500 75 23 pF pF pF STB3NA60-1 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Typ . Max. Un it Turn-on T ime Rise Time Parameter V DD = 300 V I D = 1.5 A V GS = 10 V R G = 18 Ω (see test circuit, figure 3) Test Cond ition s Min. 14 25 20 35 ns ns Turn-on Current Slope V DD = 400 V ID = 3 A R G = 18 Ω V GS = 10 V (see test circuit, figure 5) 300 Total Gate Charge Gate-Source Charge Gate-Drain Charge ID = 3 A V DD = Max Rating x 0.8 22 6 9 30 nC nC nC Typ . Max. Un it 13 24 12 18 34 17 ns ns ns Typ . Max. Un it 2.9 11.6 A A 1.5 V V GS = 10 V A/µs SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s Min. V DD = 480 V ID = 3 A VGS = 10 V R G = 18 Ω (see test circuit, figure 5) SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Min. I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward O n Voltage I SD = 2.9 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A di/dt = 100 A/µs o T j = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM V GS = 0 460 ns 5.6 µC 24 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STB3NA60-1 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STB3NA60-1 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STB3NA60-1 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/9 Fig. 2: Unclamped Inductive Waveform STB3NA60-1 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STB3NA60-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B1 1.2 1.38 0.047 0.054 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 E 10 10.28 0.393 0.404 L 13.2 13.5 0.519 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.37 0.050 0.054 E e B B2 C2 A1 A C A L1 L2 8/9 MAX. D L STB3NA60-1 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9